K9LUGY8J7D-BCK0 vs K9LUGY8J7D-CCK0 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ K9LUGY8J7D-BCK0 بواسطة Samsung Electronics و K9LUGY8J7D-CCK0 بواسطة Samsung Electronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Samsung Electronics
K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
K9LUGY8J7D-CCK0 ✓ نشطمقارنة المواصفات
| المعامل | K9LUGY8J7D-BCK0 | K9LUGY8J7D-CCK0 |
|---|---|---|
| العلامة التجارية | Samsung Electronics | Samsung Electronics |
| الفئة | Memory ICs | Memory ICs |
| حالة دورة الحياة | نشط | نشط |
| Manufacturer | Samsung Electronics | Samsung Electronics |
| Product Type | 3D V-NAND Flash Memory | — |
| Memory Technology | V-NAND (3D NAND flash) | — |
| Density | [DATA_NEEDED: density] | [DATA_NEEDED: total density (bits)] |
| Cell Type | [DATA_NEEDED: cell type (MLC/TLC/QLC)] | — |
| التنظيم | [DATA_NEEDED: organization] | — |
| الواجهة | [DATA_NEEDED: interface type] | [DATA_NEEDED: interface type / toggle DDR mode] |
| جهد التغذية | [DATA_NEEDED: VCC range] | [DATA_NEEDED: supply voltage (V)] |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Program Time (typ) | [DATA_NEEDED: tPROG] | — |
| Erase Time (typ) | [DATA_NEEDED: tBERS] | — |
| Read Time (typ) | [DATA_NEEDED: tR] | — |
| Endurance | [DATA_NEEDED: P/E cycles] | — |
| درجة حرارة التشغيل | [DATA_NEEDED: temperature range] | [DATA_NEEDED: temperature range (C)] |
| العلبة | [DATA_NEEDED: package type and dimensions] | BGA (surface mount) |
| نوع التركيب | Surface Mount | Surface Mount |
| حالة RoHS | unknown | [DATA_NEEDED: RoHS status] |
| نوع الذاكرة | — | NAND Flash (V-NAND) |
| Memory Cell Type | — | TLC (Triple-Level Cell) |
| Technology | — | V-NAND (vertical NAND) |
| Program/Erase Endurance | — | [DATA_NEEDED: P/E cycles] |
| Data Retention | — | [DATA_NEEDED: retention] |
| Speed Grade Code | — | CCK0 (per Samsung part-number convention) |