K9UMGB8U7M vs K9MDG08U5M مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ K9UMGB8U7M بواسطة Samsung Electronics و K9MDG08U5M بواسطة Samsung Electronics. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | K9UMGB8U7M | K9MDG08U5M |
|---|---|---|
| العلامة التجارية | Samsung Electronics | Samsung Electronics |
| الفئة | Memory ICs | Memory ICs |
| حالة دورة الحياة | نشط | نشط |
| نوع الذاكرة | NAND Flash | MLC Large Block NAND Flash |
| Manufacturer | Samsung Electronics | — |
| Family | K9U series NAND Flash | — |
| Data Interface | [DATA_NEEDED: Data Interface] | — |
| Density | [DATA_NEEDED: Memory Density] | 16 Gbit (2 GB) |
| التنظيم | [DATA_NEEDED: Memory Organization] | 16G x 8 bit |
| Cell Type | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] | MLC (2 bits per cell) |
| جهد التغذية | [DATA_NEEDED: Supply Voltage] | — |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Read Time | [DATA_NEEDED: Read Time] | — |
| Program Time | [DATA_NEEDED: Program Time] | — |
| Endurance | [DATA_NEEDED: Program/Erase Cycles] | — |
| درجة حرارة التشغيل | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| العلبة | [DATA_NEEDED: Package Type] | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| نوع التركيب | [DATA_NEEDED: Mounting Type] | Surface Mount |
| حالة RoHS | [DATA_NEEDED: RoHS Status] | unknown |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| الواجهة | — | Asynchronous x8 multiplexed address/data |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |