K9UMGB8U7M vs K9MDG08U5M 比較

詳細並排比較 K9UMGB8U7M 由 Samsung Electronics 與 K9MDG08U5M 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Samsung Electronics
K9UMGB8U7M K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics

K9UMGB8U7M ✓ 啟用中
Samsung Electronics
K9MDG08U5M K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M - 16Gb x8 MLC NAND Flash TSOP1-48 | Samsung

K9MDG08U5M ✓ 啟用中

規格比較

參數 K9UMGB8U7M K9MDG08U5M
品牌 Samsung Electronics Samsung Electronics
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 NAND Flash MLC Large Block NAND Flash
Manufacturer Samsung Electronics —
Family K9U series NAND Flash —
Data Interface [DATA_NEEDED: Data Interface] —
Density [DATA_NEEDED: Memory Density] 16 Gbit (2 GB)
組織 [DATA_NEEDED: Memory Organization] 16G x 8 bit
Cell Type [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] MLC (2 bits per cell)
供應電壓 [DATA_NEEDED: Supply Voltage] —
Page Size [DATA_NEEDED: Page Size] [DATA_NEEDED: page size]
Block Size [DATA_NEEDED: Block Size] [DATA_NEEDED: block size]
Read Time [DATA_NEEDED: Read Time] —
Program Time [DATA_NEEDED: Program Time] —
Endurance [DATA_NEEDED: Program/Erase Cycles] —
工作溫度 [DATA_NEEDED: Operating Temperature Range] [DATA_NEEDED: operating temperature range]
封裝 [DATA_NEEDED: Package Type] 48-pin TSOP1 dual stacked, 12 mm x 20 mm
安裝類型 [DATA_NEEDED: Mounting Type] Surface Mount
RoHS 狀態 [DATA_NEEDED: RoHS Status] unknown
Supply Voltage Min — 2.7 V
Supply Voltage Max — 3.6 V
介面 — Asynchronous x8 multiplexed address/data
Terminals — 48
Circuits — 1
Die Configuration — Dual stacked
Page Read Time (tR) — [DATA_NEEDED: tR]
Program Time (tPROG) — [DATA_NEEDED: tPROG]

資料表與資源

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