K9UMGB8U7M vs K9MDG08U5M तुलना
विस्तृत दोनों ओर की तुलना K9UMGB8U7M द्वारा Samsung Electronics और K9MDG08U5M द्वारा Samsung Electronics. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Samsung Electronics
K9UMGB8U7M - Samsung NAND Flash Memory | Samsung Electronics
K9UMGB8U7M ✓ सक्रिय
विशेषता तुलना
| पैरामीटर | K9UMGB8U7M | K9MDG08U5M |
|---|---|---|
| ब्रांड | Samsung Electronics | Samsung Electronics |
| श्रेणी | Memory ICs | Memory ICs |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| मेमोरी प्रकार | NAND Flash | MLC Large Block NAND Flash |
| Manufacturer | Samsung Electronics | — |
| Family | K9U series NAND Flash | — |
| Data Interface | [DATA_NEEDED: Data Interface] | — |
| Density | [DATA_NEEDED: Memory Density] | 16 Gbit (2 GB) |
| संगठन | [DATA_NEEDED: Memory Organization] | 16G x 8 bit |
| Cell Type | [DATA_NEEDED: Cell Type (SLC/MLC/TLC)] | MLC (2 bits per cell) |
| सप्लाई वोल्टेज | [DATA_NEEDED: Supply Voltage] | — |
| Page Size | [DATA_NEEDED: Page Size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: Block Size] | [DATA_NEEDED: block size] |
| Read Time | [DATA_NEEDED: Read Time] | — |
| Program Time | [DATA_NEEDED: Program Time] | — |
| Endurance | [DATA_NEEDED: Program/Erase Cycles] | — |
| ऑपरेटिंग तापमान | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: operating temperature range] |
| पैकेज | [DATA_NEEDED: Package Type] | 48-pin TSOP1 dual stacked, 12 mm x 20 mm |
| माउंटिंग प्रकार | [DATA_NEEDED: Mounting Type] | Surface Mount |
| RoHS स्थिति | [DATA_NEEDED: RoHS Status] | unknown |
| Supply Voltage Min | — | 2.7 V |
| Supply Voltage Max | — | 3.6 V |
| इंटरफ़ेस | — | Asynchronous x8 multiplexed address/data |
| Terminals | — | 48 |
| Circuits | — | 1 |
| Die Configuration | — | Dual stacked |
| Page Read Time (tR) | — | [DATA_NEEDED: tR] |
| Program Time (tPROG) | — | [DATA_NEEDED: tPROG] |