MPX12GP vs MPX2050GP مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MPX12GP بواسطة NXP Semiconductors و MPX2050GP بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | MPX12GP | MPX2050GP |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | Pressure Sensors | Pressure Sensors |
| حالة دورة الحياة | Obsolete | نشط |
| Pressure Type | Vented Gauge | Vented Gauge |
| Maximum Pressure | 1.45 PSI (10 kPa) | — |
| Operating Pressure Range | 0 kPa to 10 kPa | 0 kPa to 50 kPa (0 PSI to 7.25 PSI) |
| نوع الخرج | Analog Voltage (Wheatstone bridge, uncompensated) | Analog Wheatstone Bridge (mV) |
| Output Span @ 3 V | 0 mV to 55 mV | — |
| Supply Voltage (typical) | 3 V DC | — |
| Excitation Type | Constant voltage or constant current | — |
| Port Style | Male 0.19" (4.93 mm) axial tube | Male 0.19" (4.93 mm) Tube |
| عدد الدبابيس | 4 | — |
| العلبة / الحالة | 4-SIP Module (Case 344B-01) | 4-SIP Module (Case 344B-01) |
| درجة حرارة التشغيل | -40 °C to +125 °C | 0C to +85C |
| نوع التركيب | Through Hole | Through-Hole (SIP, vertical) |
| Linearity | ±0.5 % (typical) | +/-0.05% to +/-0.1% of FSS (typ) |
| Compensation | Uncompensated (external compensation required) | On-chip temperature compensated and laser-trimmed |
| حالة RoHS | [DATA_NEEDED: RoHS status] | — |
| Maximum Overload Pressure | — | [DATA_NEEDED: maximum overload pressure] |
| Full-Scale Output (Typ @ 10 V) | — | 40 mV (4 mV/V) |
| Zero Offset (Typ) | — | 0 mV |
| Supply / Excitation Voltage | — | 10 V typical (max 16 V per datasheet) |
| Pressure Hysteresis | — | < 0.1% of FSS |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Response Time | — | [DATA_NEEDED: response time / bandwidth] |
| Technology | — | Silicon Piezoresistive, MEMS |
| Diaphragm Material | — | Monolithic silicon with integrated strain gauge |
| Lead-Free / RoHS | — | Yes (RoHS compliant) |