MRFE6S9160HSR3 vs MRF6S9160HSR3 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ MRFE6S9160HSR3 بواسطة NXP Semiconductors و MRF6S9160HSR3 بواسطة NXP Semiconductors. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ آخر فرصة للشراءمقارنة المواصفات
| المعامل | MRFE6S9160HSR3 | MRF6S9160HSR3 |
|---|---|---|
| العلامة التجارية | NXP Semiconductors | NXP Semiconductors |
| الفئة | MOSFETs | MOSFETs |
| حالة دورة الحياة | نشط | آخر فرصة للشراء |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRFE6S9160HSR3 | — |
| نوع الترانزستور | LDMOS, N-Channel, Enhancement-Mode, Lateral | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| جهد الانهيار للتصريف-المصدر | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | 20.9 dB typical at 880 MHz |
| Drain Efficiency | 31% (typical at 35 W avg.) | 31% typical at 880 MHz |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| العلبة | NI-780S (NI780HS) ceramic, bolted flange | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| نوع التركيب | Through-hole / chassis mount with flange | Flange / Chassis Mount with screw holes |
| حالة RoHS | [DATA_NEEDED: confirm via latest distributor listing] | — |
| Technology | HV6E (6th gen high-voltage LDMOS) | — |
| Application | — | RF Power Amplifier |
| Operating Frequency | — | 865 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |