MRFE6S9160HSR3 vs MRF6S9160HSR3 तुलना
विस्तृत दोनों ओर की तुलना MRFE6S9160HSR3 द्वारा NXP Semiconductors और MRF6S9160HSR3 द्वारा NXP Semiconductors. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
NXP Semiconductors
MRF6S9160HSR3 - 880MHz 35W RF Power LDMOS | NXP Semiconductors
MRF6S9160HSR3 ⚠ अंतिम खरीदविशेषता तुलना
| पैरामीटर | MRFE6S9160HSR3 | MRF6S9160HSR3 |
|---|---|---|
| ब्रांड | NXP Semiconductors | NXP Semiconductors |
| श्रेणी | MOSFETs | MOSFETs |
| लाइफसाइकिल स्थिति | सक्रिय | अंतिम बार खरीदें |
| Manufacturer | NXP Semiconductors (formerly Freescale) | — |
| Part Number | MRFE6S9160HSR3 | — |
| ट्रांज़िस्टर प्रकार | LDMOS, N-Channel, Enhancement-Mode, Lateral | LDMOS, N-Channel Enhancement-Mode Lateral MOSFET |
| Drain-Source Voltage (VDSS) | 66 V (rated) | — |
| ड्रेन-सोर्स ब्रेकडाउन वोल्टेज | [DATA_NEEDED: V(BR)DSS minimum] | — |
| Operating Drain Voltage (VDD) | 28 V (typical bias) | — |
| Continuous Drain Current (ID) | 10 uA [leakage spec context, ID max [DATA_NEEDED]] | — |
| Quiescent Current (IDQ) | 1200 mA | — |
| Operating Frequency Range | 865 MHz to 960 MHz | — |
| Test Frequency | 880 MHz | 880 MHz |
| Output Power (Pout) Avg. | 35 W (under N-CDMA drive, 9.8 dB PAR) | — |
| Output Power Peak | 160 W (peak envelope) | — |
| Power Gain | 21 dB (typical at 880 MHz) | 20.9 dB typical at 880 MHz |
| Drain Efficiency | 31% (typical at 35 W avg.) | 31% typical at 880 MHz |
| ACPR at 750 kHz Offset | -46.8 dBc | — |
| पैकेज | NI-780S (NI780HS) ceramic, bolted flange | NI-780S (CASE 465-06, STYLE 1) ceramic flange-mount |
| माउंटिंग प्रकार | Through-hole / chassis mount with flange | Flange / Chassis Mount with screw holes |
| RoHS स्थिति | [DATA_NEEDED: confirm via latest distributor listing] | — |
| Technology | HV6E (6th gen high-voltage LDMOS) | — |
| Application | — | RF Power Amplifier |
| Operating Frequency | — | 865 MHz to 960 MHz |
| Drain-Source Voltage (Vdss) Rated | — | 68 V |
| Operating Voltage (VDD) | — | 28 V |
| Test Bias Current (IDQ) | — | 1.2 A |
| Output Power (Pout, Avg.) | — | 35 W Avg. |
| ACPR @ 750 kHz Offset | — | -46.8 dBc (N-CDMA) |
| Lead-Free Status | — | Lead free (HSR3 suffix) |
| Designed Waveforms | — | N-CDMA, GSM, GSM EDGE, multicarrier |