RTAX2000DL-1CQ352V vs RTAX2000DL-1CQ352E مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ RTAX2000DL-1CQ352V بواسطة Microchip Technology و RTAX2000DL-1CQ352E بواسطة Microchip Technology. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ نشطMicrochip Technology
RTAX2000DL-1CQ352E - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352E ✓ نشطمقارنة المواصفات
| المعامل | RTAX2000DL-1CQ352V | RTAX2000DL-1CQ352E |
|---|---|---|
| العلامة التجارية | Microchip Technology | Microchip Technology |
| الفئة | FPGA & CPLD | FPGA & CPLD |
| حالة دورة الحياة | نشط | نشط |
| Family | RTAX-DSP (RTAX2000DL) | RTAX-DSP / RTAX-SL radiation-tolerant FPGAs |
| Equivalent System Gates | 2,000,000 (approx.) | 2000000 gates |
| Logic Cells | 29,568 | 29568 |
| CLBs | 19,712 | — |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.5 V nominal (1.425 V to 1.575 V) |
| Technology | Digital CMOS | Digital CMOS, antifuse (nonvolatile, one-time programmable) |
| Programming Technology | Antifuse (one-time programmable) | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | — |
| Configuration | Live at power-up, no external boot memory | Live at power-up, no external configuration device |
| Speed Grade | -1 | -1 (standard) |
| العلبة | CQ352 (352-pin ceramic QFP) | 352-terminal CQFP (Ceramic Quad Flat Pack), column E lead finish |
| نوع التركيب | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| حالة RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| درجة حرارة التشغيل | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| Configurable Logic Blocks (CLBs) | — | 19712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Total Ionizing Dose (Functional) | — | 300 krad(Si) |
| Total Ionizing Dose (Parametric rating) | — | 200 krad(Si) |
| User I/O | — | 166 input and 166 output terminals |