RTAX2000DL-1CQ352V vs RTAX2000DL-1CQ352E तुलना
विस्तृत दोनों ओर की तुलना RTAX2000DL-1CQ352V द्वारा Microchip Technology और RTAX2000DL-1CQ352E द्वारा Microchip Technology. मुख्य विशेषताओं, इलेक्ट्रिकल पैरामीटर, पैकेजिंग, चक्र स्थिति, मूल्यांकन और उपलब्धता को तुलना करके अपनी डिजाइन की आवश्यकताओं के लिए सबसे अच्छा घटक निर्धारित करें。
Microchip Technology
RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352V ✓ सक्रियMicrochip Technology
RTAX2000DL-1CQ352E - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352E ✓ सक्रियविशेषता तुलना
| पैरामीटर | RTAX2000DL-1CQ352V | RTAX2000DL-1CQ352E |
|---|---|---|
| ब्रांड | Microchip Technology | Microchip Technology |
| श्रेणी | FPGA & CPLD | FPGA & CPLD |
| लाइफसाइकिल स्थिति | सक्रिय | सक्रिय |
| Family | RTAX-DSP (RTAX2000DL) | RTAX-DSP / RTAX-SL radiation-tolerant FPGAs |
| Equivalent System Gates | 2,000,000 (approx.) | 2000000 gates |
| Logic Cells | 29,568 | 29568 |
| CLBs | 19,712 | — |
| Core Supply Voltage | 1.425 V to 1.575 V (nominal 1.5 V) | 1.5 V nominal (1.425 V to 1.575 V) |
| Technology | Digital CMOS | Digital CMOS, antifuse (nonvolatile, one-time programmable) |
| Programming Technology | Antifuse (one-time programmable) | — |
| Radiation Tolerance | Radiation-tolerant (RTAX-DSP) | — |
| Configuration | Live at power-up, no external boot memory | Live at power-up, no external configuration device |
| Speed Grade | -1 | -1 (standard) |
| पैकेज | CQ352 (352-pin ceramic QFP) | 352-terminal CQFP (Ceramic Quad Flat Pack), column E lead finish |
| माउंटिंग प्रकार | Surface Mount | Surface Mount |
| Application Domain | Space-flight systems | — |
| Special Features | DSP multiply-accumulate blocks (DL variant) | — |
| RoHS स्थिति | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| ऑपरेटिंग तापमान | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: operating temperature range] |
| Embedded SRAM | [DATA_NEEDED: Embedded SRAM capacity] | — |
| Configurable Logic Blocks (CLBs) | — | 19712 |
| DSP Mathblocks | — | Up to 120 |
| DSP MAC Performance | — | 125 MHz 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | — | Up to 540 kbits SRAM with optional EDAC |
| Total Ionizing Dose (Functional) | — | 300 krad(Si) |
| Total Ionizing Dose (Parametric rating) | — | 200 krad(Si) |
| User I/O | — | 166 input and 166 output terminals |