RTAX2000DL-1CQ352V vs RTAX2000DL-1CQ352E Perbandingan

Perbandingan bersamaan detil RTAX2000DL-1CQ352V dari Microchip Technology dan RTAX2000DL-1CQ352E dari Microchip Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Microchip Technology
RTAX2000DL-1CQ352V RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-1CQ352V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-1CQ352V ✓ Aktif
Microchip Technology
RTAX2000DL-1CQ352E RTAX2000DL-1CQ352E - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-1CQ352E - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000DL-1CQ352E ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum RTAX2000DL-1CQ352V RTAX2000DL-1CQ352E
Merek Microchip Technology Microchip Technology
Kategori FPGA & CPLD FPGA & CPLD
Status Lingkungan Hidup Aktif Aktif
Family RTAX-DSP (RTAX2000DL) RTAX-DSP / RTAX-SL radiation-tolerant FPGAs
Equivalent System Gates 2,000,000 (approx.) 2000000 gates
Logic Cells 29,568 29568
CLBs 19,712 —
Core Supply Voltage 1.425 V to 1.575 V (nominal 1.5 V) 1.5 V nominal (1.425 V to 1.575 V)
Technology Digital CMOS Digital CMOS, antifuse (nonvolatile, one-time programmable)
Programming Technology Antifuse (one-time programmable) —
Radiation Tolerance Radiation-tolerant (RTAX-DSP) —
Configuration Live at power-up, no external boot memory Live at power-up, no external configuration device
Speed Grade -1 -1 (standard)
Paket CQ352 (352-pin ceramic QFP) 352-terminal CQFP (Ceramic Quad Flat Pack), column E lead finish
Tipe Mounting Surface Mount Surface Mount
Application Domain Space-flight systems —
Special Features DSP multiply-accumulate blocks (DL variant) —
Status RoHS [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
Suhu Kerja [DATA_NEEDED: Operating Temperature] [DATA_NEEDED: operating temperature range]
Embedded SRAM [DATA_NEEDED: Embedded SRAM capacity] —
Configurable Logic Blocks (CLBs) — 19712
DSP Mathblocks — Up to 120
DSP MAC Performance — 125 MHz 18-bit x 18-bit multiply-accumulate
Embedded Memory — Up to 540 kbits SRAM with optional EDAC
Total Ionizing Dose (Functional) — 300 krad(Si)
Total Ionizing Dose (Parametric rating) — 200 krad(Si)
User I/O — 166 input and 166 output terminals

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