EP3SE50F780C4G - Stratix III E FPGA, 47.5K LE, 488 I/O, 780-FBGA | Intel
MPN: EP3SE50F780C4G ✓ نشطEP3SE50F780C4G نظرة عامة
A Field-Programmable Gate Array (FPGA) is a type of programmable logic device that combines configurable logic blocks (CLBs/ALMs), programmable interconnect, and dedicated hardware such as block RAM, DSP blocks, and high-speed transceivers. FPGAs belong to the broader semiconductor category of programmable logic, sitting between general-purpose microcontrollers (fixed function) and custom ASICs (fixed silicon). Stratix III E extends the Stratix III family with enhanced DSP and external memory interface bandwidth for compute-intensive applications.
Key features include a 1.1 V core supply, 8.5 Gbps transceivers on the Stratix III GT variant, hard memory controllers for DDR3 with up to 1066 Mbps data rates, and Quartus II design-software support with Qsys system-integration tooling. The 780-FBGA package exposes 488 user I/Os, supports PCI Express Gen1/Gen2 hard IP, and offers SEU mitigation via CRC and parity on configuration memory.
The transceiver-rich architecture (when using the GT variant) and abundant DSP blocks make the EP3SE50F780C4G well suited to high-throughput baseband processing, video broadcast infrastructure, and high-speed serial protocol bridging. The 5.76 Mbit embedded memory bank supports wide datapath buffering, eliminating the need for external SRAM in many designs.
Typical applications include wireless base-station channel cards, military radar signal processing, ASIC prototyping platforms, medical imaging pipelines, and high-end video switching fabrics. Designers also use it in wire-speed packet processing and high-frequency trading acceleration where deterministic latency and parallel DSP resources dominate the design constraint set.
When designing with this device, pay close attention to power-rail sequencing: the core (VCC), auxiliary (VCCAUX), and I/O banks each require specific ramp rates defined in the datasheet. Decoupling must follow the reference design pattern, and unused transceiver channels must be powered down with the correct bias network to avoid back-powering the die.
This page synthesizes distributor pricing, drop-in alternatives, and design guidance not found in the manufacturer datasheet alone. Specifications below are extracted from the Stratix III device family datasheet and current distributor inventory data.
بدائل مباشرة لـ EP3SE50F780C4G — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع EP3SE50F780C4G (نفس عامل الشكل والبصمة) — يختلف في Package, Speed Grade, Embedded Memory, Family, Mounting Type.
EP3SE50F780C4N
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←EP3SE50F780C4
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←EP3SE50F780C3G
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←EP3SE50F780C3N
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←EP3SE110F780C4
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←EP3SE260F780C4N
✅ بديل مباشر📋 بديل مرجعي (غير موجود في الكتالوج)
EP3SE50F780C4G الحدود القصوى والخصائص الكهربائية
| Family | Stratix III E |
| Series | Stratix III |
| Logic Elements | 47,500 LE |
| Adaptive Logic Modules (ALMs) | 19,000 ALM |
| Embedded Memory | 5.76 Mbit (5760000 bit) |
| Number of I/Os | 488 |
| Process Technology | 40 nm TSMC |
| Core Supply Voltage | 1.1 V |
| نطاق درجة حرارة التشغيل | 0 C to +85 C (commercial) |
| العلبة | 780-ball FBGA (FCBGA) |
| نوع التركيب | Surface Mount (SMD/SMT) |
| حالة RoHS | Compliant |
| Lead-Free | Yes |
| مستوى MSL | MSL3 (per JEDEC J-STD-020) |
| Configuration Memory | SRAM-based (volatile, requires configuration device) |
| Design Software | Quartus II |
دليل تكوين أطراف EP3SE50F780C4G 780-ball fbga (fcbga)
تكوين الأطراف لـ EP3SE50F780C4G (حزمة 780-ball fbga (fcbga)). تتضمن هذه الدائرة المتكاملة الرقمية GPIO وواجهات الاتصال (UART وSPI وI2C) وأطراف الطاقة. راجع ورقة بيانات الشركة المصنعة لوظائف الأطراف البديلة وخيارات التكوين. ضرورية لتصميم الأنظمة المدمجة وتخطيط PCB.
لا تتوفر بيانات مفصلة لمخطط التوصيلات لـ EP3SE50F780C4G.
راجع ورقة البيانات للحصول على تكوين الأطراف الكامل.
التطبيقات النموذجية
EP3SE50F780C4G مناسب لـ 7 التطبيقs: Wireless Base-Station Channel Card, ASIC Prototyping Platform, Military Radar Signal Processing, Medical Imaging Pipeline, High-End Video Broadcast Switcher, Wire-Speed Packet Processing, Industrial Motor Control Drive.
Wireless Base-Station Channel Card
The EP3SE50F780C4G's 47,500 logic elements and abundant 18x18 multipliers make it well suited for wireless base-station channel card designs. With 488 user I/Os and 5.76 Mbits of embedded memory, the FPGA can implement multi-antenna MIMO processing, digital up/down conversion, and CPRI/OBSAI fronthaul bridging in parallel. The 1.1 V core and 40 nm process keep power within the thermal envelope of a typical outdoor base-station chassis. Designers pair it with TI ADC and DAC companions such as the ADS62P49 for direct RF sampling chains.
موصى به
ASIC Prototyping Platform
With 47,500 logic elements, 488 user I/Os, and Quartus II support, the EP3SE50F780C4G serves as a high-density node for ASIC prototyping platforms. The 780-FBGA package exposes enough I/O for multi-million-gate ASIC partitions, while the abundant on-chip memory eliminates the need for external SRAM in many verification flows. Designers use the Stratix III E architecture to emulate SoC subsystems at near-real-time speeds and verify firmware against hardware prototypes before tape-out.
موصى به
Military Radar Signal Processing
The EP3SE50F780C4G's parallel DSP architecture (multipliers, ALMs, 5.76 Mbit block RAM) fits the compute density required for phased-array radar signal processing. Its 488 I/Os interface directly to multi-channel ADC arrays, while the embedded memory supports range-Doppler map buffering without external SRAM. The C4 speed grade provides deterministic timing margins for safety-critical radar applications, and Quartus II supports SEU-aware compilation flows for aerospace-grade reliability.
موصى به
Medical Imaging Pipeline
Ultrasound beamforming and CT image reconstruction benefit from the EP3SE50F780C4G's parallel multiplier resources and wide internal datapaths. The FPGA can process 64+ channel beamforming in real time at 30+ MHz, while 488 I/Os interface to multi-channel ADCs and LVDS receivers. The 5.76 Mbit on-chip memory buffers scan-line data between acquisition and image processing stages, and the 1.1 V core keeps thermal output suitable for sealed medical enclosures.
موصى به
High-End Video Broadcast Switcher
Broadcast video switchers require real-time processing of multiple 3G-SDI / HD-SDI streams, with the EP3SE50F780C4G providing the I/O count (488 pins) and logic density (47.5K LE) to handle 4K UHD up/down/cross-conversion in a single device. Embedded memory supports multi-frame buffering for picture-in-picture and fade transitions, while Quartus II's video IP suite (including the VIP suite) accelerates development of color-space converters and scaling engines.
موصى به
Wire-Speed Packet Processing
The EP3SE50F780C4G's embedded memory and high logic count fit wire-speed packet processing workloads such as deep packet inspection and traffic management. Designers leverage the 488 I/Os to interface with multi-lane 10 GbE SFP+ channels via external PHY devices, while on-chip block RAM stores flow tables and lookup caches. The Stratix III E architecture supports parallel TCAM emulation for ACL lookups, eliminating external TCAM chips in many designs.
موصى به
Industrial Motor Control Drive
Precision servo drives and CNC controllers leverage the EP3SE50F780C4G for closed-loop current and position control with sub-microsecond loop times. The 488 I/Os interface directly to resolver-to-digital converters, encoder inputs, and multi-axis PWM outputs. The 5.76 Mbit embedded memory supports trajectory buffering and adaptive notch filtering, while Quartus II's DSP Builder accelerates development of field-oriented control (FOC) and sensorless control algorithms.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ EP3SE50F780C4G — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | EP3SE50F780C4N | EP3SE50F780C3G | EP3SE110F780C4 |
|---|---|---|---|---|
| Brand | Intel (Altera) | Intel (Altera) - same brand | Intel (Altera) - same brand | Intel (Altera) - same brand |
| Package | 780-FBGA | 780-FBGA - same | 780-FBGA - same | 780-FBGA - same family (verify pinout) |
| Logic Elements | 47,500 LE | 47,500 LE - same | 47,500 LE - same | 110,000 LE - +131% |
| Embedded Memory | 5.76 Mbit | 5.76 Mbit - same | 5.76 Mbit - same | Approx. 12 Mbit - ~2x |
| User I/O | 488 | 488 - same | 488 - same | 488 - same |
| Speed Grade | C4 (fastest) | C4 - same | C3 - ~10% slower Fmax | C4 - same |
| RoHS Compliance | Yes (G suffix) | Check - N suffix variant | Yes (G suffix) | Check - no G suffix |
| Unit Price (qty 1) | $911.86 | $911.86 (estimated same) | Lower (slower grade) | Higher (~2x due to density) |
أبرز الفروقات
- Highest-density Stratix III E in 780-FBGA footprint with RoHS 'G' suffix (مقابلEP3SE110F780C4)
- Lead-free RoHS-compliant ball finish (مقابلEP3SE50F780C4N)
- C4 speed grade provides 10% higher Fmax over C3 (مقابلEP3SE50F780C3G)
ملاحظات التصميم
Estimated: At 50% toggle rate and typical Stratix III E utilization, the EP3SE50F780C4G consumes approximately 5-8 W. Power-rail sequencing is critical: ramp VCC (1.1 V core) before VCCAUX, then VCCIO banks. Reverse sequencing can latch up the device. Use a dedicated power-supply sequencer such as the LM3880 or a discrete RC delay network. Decouple each rail with 0.1 uF + 10 uF ceramic capacitors placed within 5 mm of each power pin per the Stratix III reference design.
The 780-FBGA package requires high-density interconnect PCB fabrication with microvia stack-up. Use a minimum 4-6 layer board with dedicated ground and power planes. Escape routing from the BGA must use either dog-bone fanout or via-in-pad. Maintain 100 ohm differential impedance for high-speed transceiver pairs and 50 ohm single-ended for general-purpose I/O. Follow Intel's Stratix III board design guidelines for layer stack-up and via geometry.
Estimated: At 8 W total dissipation and a JEDEC JESD51-9 2s2p test board, the 780-FBGA's theta_JA is approximately 12-15 C/W, yielding a junction temperature rise of ~100-120 C above ambient at full load. For forced-air cooling, provide at least 200 LFM airflow across the device. Without airflow, derate the operating temperature or reduce clock frequency. Consider attaching a heatsink with thermal interface material (TIM) for industrial temperature range operation.
Configuration memory is SRAM-based and volatile - the bitstream must be loaded at every power-up from a non-volatile configuration device such as EPCQ256 or via JTAG. Failures to configure correctly are most often due to incorrect MSEL pin settings (selecting the wrong configuration mode) or improper CONFIG_DONE pull-up. Always include a watchdog or fallback configuration path for production boards. Verify configuration timing with TimeQuest before tape-out.
For multi-gigabit transceiver channels (when used with Stratix III GT variants), maintain continuous reference-plane return paths under the differential pairs. Use length-matching within +/-5 mils for differential pairs and keep total skew below the receiver's de-skew budget. For DDR3 memory interfaces running at 1066 Mbps, follow the Stratix III external memory interface handbook for read/write leveling and DQS placement.
معلومات الامتثال
Per the 'G' suffix in the MPN, the EP3SE50F780C4G is lead-free and RoHS compliant per Intel's Stratix III product family documentation. AEC-Q100 is not applicable for FPGAs. Reach compliance assumed per EU regulations; verify against latest Intel PCN if sourcing for medical or industrial use.
