K4RAH086VP-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung
MPN: K4RAH086VP-BCWM ✓ نشطK4RAH086VP-BCWM نظرة عامة
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random access memory) is the current-generation DRAM interface standard, doubling the bank-group count of DDR4 and introducing on-die ECC, decision-feedback equalization, and dual independent 32-bit subchannels per module. Within the memory hierarchy, the K4RAH086VP-BCWM is a volatile DRAM component sitting between the CPU memory controller and non-volatile storage, providing the primary working memory for compute systems.
Key features include the 5600 Mbps data rate (PC5-44800 class bandwidth when assembled into modules), the 2G x 8 organization that allows x8-based server and desktop DIMM designs, and the 1.1 V VDD supply that reduces memory subsystem power versus 1.2 V DDR4. DDR5's on-die ECC and DFE receivers sustain signal integrity at high data rates across the DDR5 channel.
Technically, the device uses Samsung DRAM process technology with DDR5-specific architecture: sixteen logical banks organized across multiple bank groups, burst length 16, and configurable on-die termination schemes. The BCWM speed bin denotes 5600 Mbps operation at the standard DDR5 supply range, and the component supports standard DDR5 JEDEC command timing per its manufacturer datasheet.
Typical applications include industrial compute modules, server and workstation RDIMMs, edge computing gateways, and embedded controllers where industrial-temperature DDR5 memory is specified. Its x8 organization suits ECC-based DIMM topologies and high-density stacked or soldered-down memory subsystems.
Design consideration: DDR5 power delivery splits VDD and VDDQ domains and moves power management onto the module via a PMIC, so board designers must provision both the 1.1 V core rail and the separate DQS/data termination rails, with careful fly-by or point-to-point routing per the DDR5 signal-integrity guidelines.
This page synthesizes distributor stock data from multiple trading sources, drop-in family alternatives, and design notes not found in the manufacturer datasheet.
بدائل مباشرة لـ K4RAH086VP-BCWM — نفس الحزمة، متوافق دبوس بدبوس. تُستثنى القطع ذات الحزم المختلفة التي تتطلب تعديل PCB.
الطرازات في هذه السلسلة
طرازات من نفس السلسلة متوافقة تمامًا مع K4RAH086VP-BCWM (نفس عامل الشكل والبصمة) — يختلف في Data Rate, Interface, Package, Burst Length, Operating Temperature.
K4RAH086VE-BCWM
✅ بديل مباشر✓ متوفر في المخزون
$7.6 / وحدة
عرض ورقة البيانات ←K4RAH086VB-BCWM
✅ بديل مباشر✗ غير متوفر
$44.5455 / وحدة
عرض ورقة البيانات ←K4RAH086VB-BCQK
✅ بديل مباشر✓ متوفر في المخزون
$41.0156 / وحدة
عرض ورقة البيانات ←K4RAH086VB-BIWM
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4RAH086VB-BIQK
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4RAH086VP-BCWM
✅ بديل مباشرتواصل لمعرفة السعر
عرض ورقة البيانات ←K4RAH086VP-BCWM الحدود القصوى والخصائص الكهربائية
| نوع الذاكرة | DDR5 SDRAM |
| حجم الذاكرة | 16 Gb |
| Memory Organization | 2G x 8 |
| معدل البيانات | 5600 Mbps/pin |
| Supply Voltage (VDD) | 1.1 V |
| الواجهة | Parallel (DDR5) |
| Memory Format | DRAM (volatile) |
| Speed Grade | BCWM (DDR5-5600) |
| Application Class | Industrial |
| Configuration | 2G x 8 (16 Gb) |
| نوع التركيب | Surface Mount (FBGA BGA) |
| Packaging | Tray |
| حالة دورة الحياة | Active |
| Manufacturer | Samsung Semiconductor |
دليل تكوين أطراف K4RAH086VP-BCWM standard
تكوين الأطراف لـ K4RAH086VP-BCWM (حزمة standard). تتضمن هذه الدائرة المتكاملة الرقمية GPIO وواجهات الاتصال (UART وSPI وI2C) وأطراف الطاقة. راجع ورقة بيانات الشركة المصنعة لوظائف الأطراف البديلة وخيارات التكوين. ضرورية لتصميم الأنظمة المدمجة وتخطيط PCB.
لا تتوفر بيانات مفصلة لمخطط التوصيلات لـ K4RAH086VP-BCWM.
راجع ورقة البيانات للحصول على تكوين الأطراف الكامل.
التطبيقات النموذجية
K4RAH086VP-BCWM مناسب لـ 6 التطبيقs: Industrial Compute Modules, Server and Workstation RDIMMs, Edge Computing Gateways, Embedded Industrial Controllers, Networking and Communications Equipment, Test and Measurement Instrumentation.
Industrial Compute Modules
The K4RAH086VP-BCWM's industrial application class, 1.1 V DDR5 supply, and 16 Gb 2G x 8 organization make it well suited to industrial compute modules and COMs where high bandwidth and long-life sourcing matter. At 5600 Mbps/pin, a single x8 channel delivers substantial throughput for edge analytics workloads. Used as soldered-down DRAM on a carrier board, the device requires a 1.1 V VDD rail and DDR5-compliant routing with on-die ECC offloading error management from the host. Re-run memory training whenever this DDR5 component is substituted or firmware is updated.
موصى به
Server and Workstation RDIMMs
In server and workstation memory subsystems, the x8 organization of the K4RAH086VP-BCWM supports ECC-based DIMM topologies where each data lane is protected by side-band or on-die error correction. The 5600 Mbps speed bin matches PC5-44800-class module bandwidth, and the 1.1 V core supply reduces per-DIMW power versus DDR4. Designers should pair the DRAM with a DDR5 PMIC (RCD plus power management IC) on registered modules, and follow fly-by routing for command/address signals per JEDEC DDR5 module design guidance.
موصى به
Edge Computing Gateways
Edge gateways processing video, protocol translation, or AI inference need memory bandwidth and density without the power budget of server platforms. The K4RAH086VP-BCWM provides 16 Gb per package at 5600 Mbps, allowing two packages (4 GB) to serve a 64-bit DDR5 channel. Its 1.1 V operation and DDR5 on-die ECC improve reliability in unattended deployments. For soldered-down designs, provision the DDR5 VDDQ termination rail and follow the controller's trace-length matching rules; retrain memory after any firmware DRAM configuration change.
موصى به
Embedded Industrial Controllers
Industrial controllers benefit from the K4RAH086VP-BCWM's industrial-grade sourcing path and compact FBGA package. A single 16 Gb x8 device provides enough working memory for control loops, logging, and local analytics. Because DDR5 memory controllers require initialization, leveling, and training sequences, use a processor with a validated DDR5 PHY or a memory reference design. The 1.1 V rail should be sequenced and monitored; DDR5 PMIC-based power control simplifies sequencing versus discrete regulators in these designs.
موصى به
Networking and Communications Equipment
Switches, routers, and 5G transport equipment rely on deep packet buffers, making the K4RAH086VP-BCWM's 16 Gb density and 5600 Mbps bandwidth appropriate for buffer memory alongside network processors. The x8 organization allows narrow channels or ECC-protected links, and DDR5's bank-group architecture reduces row-miss penalties for scattered packet workloads. Designers should verify the memory controller's supported DDR5 speed bins and use the BCWM bin timing parameters from the Samsung datasheet during controller configuration and signal-integrity simulation.
موصى به
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with deterministic latency. The K4RAH086VP-BCWM offers 16 Gb per package at DDR5-5600 rates, supporting long record lengths in compact instruments. Its 1.1 V supply reduces instrument internal heat generation, and on-die ECC enhances capture reliability. Instruments typically solder down DRAM in x8 channels; designers must implement DDR5 training at boot and validate timing margins across temperature, using the Samsung datasheet AC parameters as the qualification baseline.
موصى به
ملخص المنتجات الموصى بها
بيانات مرجعية هندسية لـ K4RAH086VP-BCWM — المقارنة وإرشادات التصميم ومعلومات الامتثال.
دليل الاختيار
المقارنة مع البدائل
| المعامل | هذا المنتج | K4RAH086VE-BCWM | K4RAH086VB-BCWM | K4RAH086VB-BCQK | K4RAH086VB-BIWM | K4RAH086VB-BIQK |
|---|---|---|---|---|---|---|
| Package | FBGA | FBGA - same | FBGA - same | FBGA - same | FBGA - same | FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Technology | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
أبرز الفروقات
- Highest verified stock among family variants (مقابلK4RAH086VB-BIWM)
- DDR5-5600 speed bin (مقابلK4RAH086VB-BCQK)
- Same-footprint second-source within Samsung family (مقابلK4RAH086VE-BCWM)
ملاحظات التصميم
DDR5 splits power domains: VDD (core, 1.1 V for this part), VDDQ (DQ data), VPP, and separate termination rails. On module designs these are managed by an on-module PMIC; on soldered-down designs provision each rail with local bulk and high-frequency ceramic decoupling. Sequence rails per the Samsung datasheet power-up sequence to avoid latch-up, and monitor inrush since a fully populated DDR5 channel can draw significant transient current at 5600 Mbps burst activity.
At 5600 Mbps/pin, DDR5 relies on DFE (decision feedback equalization) receivers and on-die termination. Follow controller vendor routing rules: matched-length DQS/DQ groups, controlled impedance (typically 40/80 ohm for DDR5), and reference-plane continuity under every data group. Simulate with IBIS models from Samsung and budget eye margins across temperature. Re-run memory training at every firmware or hardware revision affecting trace geometry.
Substituting within the K4RAH086 family (VP vs VB vs VE vs BI grades) keeps the footprint, but speed-bin and temperature-grade codes (BCWM, BCQK, BIWM, BIQK) can alter supported timing and operating range. Qualify the exact bin against the memory controller's training tables; do not assume a lower bin runs at 5600 Mbps. Also confirm RoHS/compliance certificates for the exact MPN before design release, as they were not stated in the distributor data.
معلومات الامتثال
Compliance data not stated in provided distributor listings; confirm via Samsung Semiconductor compliance documentation for this exact MPN.
