K4RAH086VP-BCWM - DDR5 16Gb 5600Mbps DRAM | Samsung
부품 번호: K4RAH086VP-BCWM ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.6 | $116.00 |
| 100 | $10.8 | $1,080.00 |
| 500 | $10.1 | $5,050.00 |
| 1,000 | $9.5 | $9,500.00 |
K4RAH086VP-BCWM 개요
DDR5 SDRAM (Double Data Rate 5 synchronous dynamic random access memory) is the current-generation DRAM interface standard, doubling the bank-group count of DDR4 and introducing on-die ECC, decision-feedback equalization, and dual independent 32-bit subchannels per module. Within the memory hierarchy, the K4RAH086VP-BCWM is a volatile DRAM component sitting between the CPU memory controller and non-volatile storage, providing the primary working memory for compute systems.
Key features include the 5600 Mbps data rate (PC5-44800 class bandwidth when assembled into modules), the 2G x 8 organization that allows x8-based server and desktop DIMM designs, and the 1.1 V VDD supply that reduces memory subsystem power versus 1.2 V DDR4. DDR5's on-die ECC and DFE receivers sustain signal integrity at high data rates across the DDR5 channel.
Technically, the device uses Samsung DRAM process technology with DDR5-specific architecture: sixteen logical banks organized across multiple bank groups, burst length 16, and configurable on-die termination schemes. The BCWM speed bin denotes 5600 Mbps operation at the standard DDR5 supply range, and the component supports standard DDR5 JEDEC command timing per its manufacturer datasheet.
Typical applications include industrial compute modules, server and workstation RDIMMs, edge computing gateways, and embedded controllers where industrial-temperature DDR5 memory is specified. Its x8 organization suits ECC-based DIMM topologies and high-density stacked or soldered-down memory subsystems.
Design consideration: DDR5 power delivery splits VDD and VDDQ domains and moves power management onto the module via a PMIC, so board designers must provision both the 1.1 V core rail and the separate DQS/data termination rails, with careful fly-by or point-to-point routing per the DDR5 signal-integrity guidelines.
This page synthesizes distributor stock data from multiple trading sources, drop-in family alternatives, and design notes not found in the manufacturer datasheet.
드롭인 대체품: K4RAH086VP-BCWM — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: K4RAH086VP-BCWM (동일 폼 팩터 및 풋프린트) — 차이점: Data Rate, Interface, Package, Burst Length, Operating Temperature.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
K4RAH086VE-BCWM
✅ 드롭인✓ 재고 있음
$7.6 / 개
데이터시트 보기 →K4RAH086VB-BCWM
✅ 드롭인✓ 재고 있음
$44.5455 / 개
데이터시트 보기 →K4RAH086VB-BCQK
✅ 드롭인✓ 재고 있음
$41.0156 / 개
데이터시트 보기 →K4RAH086VB-BIWM
✅ 드롭인✓ 재고 있음
$4.85 / 개
데이터시트 보기 →K4RAH086VB-BIQK
✅ 드롭인✓ 재고 있음
$4.25 / 개
데이터시트 보기 →K4RAH086VP-BCWM
✅ 드롭인✓ 재고 있음
가격 문의
데이터시트 보기 →K4RAH086VP-BCWM 최대 정격 & 전기적 특성
| 메모리 유형 | DDR5 SDRAM |
| 메모리 크기 | 16 Gb |
| Memory Organization | 2G x 8 |
| 데이터 속도 | 5600 Mbps/pin |
| Supply Voltage (VDD) | 1.1 V |
| 인터페이스 | Parallel (DDR5) |
| Memory Format | DRAM (volatile) |
| Speed Grade | BCWM (DDR5-5600) |
| Application Class | Industrial |
| Configuration | 2G x 8 (16 Gb) |
| 실장 유형 | Surface Mount (FBGA BGA) |
| Packaging | Tray |
| 수명 주기 상태 | Active |
| Manufacturer | Samsung Semiconductor |
K4RAH086VP-BCWM standard 핀 구성 가이드
K4RAH086VP-BCWM(standard 패키지)의 핀 구성입니다. 이 디지털 IC에는 GPIO, 통신 인터페이스(UART, SPI, I2C), 전원 핀이 포함되어 있습니다. 대체 핀 기능과 구성 옵션은 제조사 데이터시트를 참조하십시오. 임베디드 시스템 설계와 PCB 레이아웃에 필수적입니다.
다음에 대한 상세 핀아웃 데이터 없음: K4RAH086VP-BCWM.
다음을 참조하십시오: 데이터시트 전체 핀 구성은 다음을 참조하십시오.
일반적인 애플리케이션
K4RAH086VP-BCWM 적합 용도: 6 애플리케이션s: Industrial Compute Modules, Server and Workstation RDIMMs, Edge Computing Gateways, Embedded Industrial Controllers, Networking and Communications Equipment, Test and Measurement Instrumentation.
Industrial Compute Modules
The K4RAH086VP-BCWM's industrial application class, 1.1 V DDR5 supply, and 16 Gb 2G x 8 organization make it well suited to industrial compute modules and COMs where high bandwidth and long-life sourcing matter. At 5600 Mbps/pin, a single x8 channel delivers substantial throughput for edge analytics workloads. Used as soldered-down DRAM on a carrier board, the device requires a 1.1 V VDD rail and DDR5-compliant routing with on-die ECC offloading error management from the host. Re-run memory training whenever this DDR5 component is substituted or firmware is updated.
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Server and Workstation RDIMMs
In server and workstation memory subsystems, the x8 organization of the K4RAH086VP-BCWM supports ECC-based DIMM topologies where each data lane is protected by side-band or on-die error correction. The 5600 Mbps speed bin matches PC5-44800-class module bandwidth, and the 1.1 V core supply reduces per-DIMW power versus DDR4. Designers should pair the DRAM with a DDR5 PMIC (RCD plus power management IC) on registered modules, and follow fly-by routing for command/address signals per JEDEC DDR5 module design guidance.
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Edge Computing Gateways
Edge gateways processing video, protocol translation, or AI inference need memory bandwidth and density without the power budget of server platforms. The K4RAH086VP-BCWM provides 16 Gb per package at 5600 Mbps, allowing two packages (4 GB) to serve a 64-bit DDR5 channel. Its 1.1 V operation and DDR5 on-die ECC improve reliability in unattended deployments. For soldered-down designs, provision the DDR5 VDDQ termination rail and follow the controller's trace-length matching rules; retrain memory after any firmware DRAM configuration change.
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Embedded Industrial Controllers
Industrial controllers benefit from the K4RAH086VP-BCWM's industrial-grade sourcing path and compact FBGA package. A single 16 Gb x8 device provides enough working memory for control loops, logging, and local analytics. Because DDR5 memory controllers require initialization, leveling, and training sequences, use a processor with a validated DDR5 PHY or a memory reference design. The 1.1 V rail should be sequenced and monitored; DDR5 PMIC-based power control simplifies sequencing versus discrete regulators in these designs.
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Networking and Communications Equipment
Switches, routers, and 5G transport equipment rely on deep packet buffers, making the K4RAH086VP-BCWM's 16 Gb density and 5600 Mbps bandwidth appropriate for buffer memory alongside network processors. The x8 organization allows narrow channels or ECC-protected links, and DDR5's bank-group architecture reduces row-miss penalties for scattered packet workloads. Designers should verify the memory controller's supported DDR5 speed bins and use the BCWM bin timing parameters from the Samsung datasheet during controller configuration and signal-integrity simulation.
추천
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators require deep capture memory with deterministic latency. The K4RAH086VP-BCWM offers 16 Gb per package at DDR5-5600 rates, supporting long record lengths in compact instruments. Its 1.1 V supply reduces instrument internal heat generation, and on-die ECC enhances capture reliability. Instruments typically solder down DRAM in x8 channels; designers must implement DDR5 training at boot and validate timing margins across temperature, using the Samsung datasheet AC parameters as the qualification baseline.
추천
추천 제품 요약
엔지니어링 참조 데이터: K4RAH086VP-BCWM — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | K4RAH086VE-BCWM | K4RAH086VB-BCWM | K4RAH086VB-BCQK | K4RAH086VB-BIWM | K4RAH086VB-BIQK |
|---|---|---|---|---|---|---|
| Package | FBGA | FBGA - same | FBGA - same | FBGA - same | FBGA - same | FBGA - same |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 | 2G x 8 |
| Supply Voltage | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V | 1.1 V |
| Technology | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM | DDR5 SDRAM |
주요 차별점
- Highest verified stock among family variants (vs K4RAH086VB-BIWM)
- DDR5-5600 speed bin (vs K4RAH086VB-BCQK)
- Same-footprint second-source within Samsung family (vs K4RAH086VE-BCWM)
설계 노트
DDR5 splits power domains: VDD (core, 1.1 V for this part), VDDQ (DQ data), VPP, and separate termination rails. On module designs these are managed by an on-module PMIC; on soldered-down designs provision each rail with local bulk and high-frequency ceramic decoupling. Sequence rails per the Samsung datasheet power-up sequence to avoid latch-up, and monitor inrush since a fully populated DDR5 channel can draw significant transient current at 5600 Mbps burst activity.
At 5600 Mbps/pin, DDR5 relies on DFE (decision feedback equalization) receivers and on-die termination. Follow controller vendor routing rules: matched-length DQS/DQ groups, controlled impedance (typically 40/80 ohm for DDR5), and reference-plane continuity under every data group. Simulate with IBIS models from Samsung and budget eye margins across temperature. Re-run memory training at every firmware or hardware revision affecting trace geometry.
Substituting within the K4RAH086 family (VP vs VB vs VE vs BI grades) keeps the footprint, but speed-bin and temperature-grade codes (BCWM, BCQK, BIWM, BIQK) can alter supported timing and operating range. Qualify the exact bin against the memory controller's training tables; do not assume a lower bin runs at 5600 Mbps. Also confirm RoHS/compliance certificates for the exact MPN before design release, as they were not stated in the distributor data.
규정 준수 정보
Compliance data not stated in provided distributor listings; confirm via Samsung Semiconductor compliance documentation for this exact MPN.
