K4B4G1646D-BCNB0 - 4Gb DDR3L SDRAM 2133Mbps | Samsung
MPN: K4B4G1646D-BCNB0 ✓ সক্রিয়K4B4G1646D-BCNB0 সারাংশ
DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, 256M x 16 organization, 2133 Mbps data rate, and 1.35V supply voltage. The device supports programmable CAS latency, on-die termination (ODT), and internal self-calibration, ensuring signal integrity and reliable operation. The 96-ball FBGA package offers a compact footprint suitable for space-constrained designs.
Technically, the K4B4G1646D-BCNB0 utilizes Samsung's advanced DRAM process technology, providing high-speed performance with low power consumption. It includes features such as posted CAS, programmable CWL, and asynchronous reset, which enhance system flexibility and reliability. The device operates over a temperature range of 0°C to 85°C, making it suitable for commercial applications.
Typical applications include laptops, servers, networking equipment, and embedded systems requiring high-density, low-power memory. Its 1.35V operation makes it ideal for battery-powered devices where power efficiency is paramount.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and proper termination for the address/control lines.
এর জন্য ড্রপ-ইন বিকল্প K4B4G1646D-BCNB0 — একই package, pin-to-pin compatible। ভিন্ন package-এর যেসব পার্টে PCB rework প্রয়োজন সেগুলো বাদ দেওয়া হয়েছে।
এই সিরিজের ভ্যারিয়েন্ট
একই সিরিজের মডেল যেগুলো drop-in compatible K4B4G1646D-BCNB0 (একই form factor এবং footprint) — পার্থক্য রয়েছে Package, Supply Voltage, Data Rate, Density, Interface.
K4B4G1646D-BCMA
✅ ড্রপ-ইন ⚠️ স্পেক যাচাইকৃত নয়📋 রেফারেন্স বিকল্প (ক্যাটালগে নেই)
K4B4G1646D-BFMA
✅ ড্রপ-ইনমূল্যের জন্য যোগাযোগ করুন
ডেটাশিট দেখুন →K4B4G1646D-BCNB
✅ ড্রপ-ইন📋 রেফারেন্স বিকল্প (ক্যাটালগে নেই)
MT41K256M16TW-107
✅ ড্রপ-ইন ⚠️ স্পেক যাচাইকৃত নয়✗ স্টকে নেই
$14.1 / ইউনিট
ডেটাশিট দেখুন →IS43TR16512B-107MBL
✅ ড্রপ-ইন ⚠️ স্পেক যাচাইকৃত নয়📋 রেফারেন্স বিকল্প (ক্যাটালগে নেই)
K4B4G1646D-BCNB0 সর্বোচ্চ রেটিং ও বৈদ্যুতিক বৈশিষ্ট্য
| Density | 4 Gb |
| সংগঠন | 256M x 16 |
| ডেটা রেট | 2133 Mbps/pin |
| সাপ্লাই ভোল্টেজ | 1.35 V (DDR3L) |
| প্যাকেজ | 96-FBGA |
| অপারেটিং তাপমাত্রা | 0°C to 85°C |
| Lead-Free | Yes |
| হ্যালোজেন মুক্ত | Yes |
| RoHS Compliant | Yes |
| ইন্টারফেস | DDR3L SDRAM |
| মাউন্টিং টাইপ | Surface Mount |
| পিনের সংখ্যা | 96 |
| Die | D-die |
K4B4G1646D-BCNB0 পিন কনফিগারেশন
| পিন A1 | VDD — Power supply (1.35V) |
| পিন A2 | DQ0 — Data input/output 0 |
| পিন A3 | DQ1 — Data input/output 1 |
| পিন A4 | VSS — Ground |
| পিন A5 | DQ2 — Data input/output 2 |
| পিন A6 | DQ3 — Data input/output 3 |
| পিন A7 | VDD — Power supply (1.35V) |
| পিন A8 | DQ4 — Data input/output 4 |
| পিন A9 | DQ5 — Data input/output 5 |
| পিন A10 | VSS — Ground |
| পিন A11 | DQ6 — Data input/output 6 |
| পিন A12 | DQ7 — Data input/output 7 |
| পিন B1 | VSS — Ground |
| পিন B2 | DQ8 — Data input/output 8 |
| পিন B3 | DQ9 — Data input/output 9 |
| পিন B4 | VDD — Power supply (1.35V) |
| পিন B5 | DQ10 — Data input/output 10 |
| পিন B6 | DQ11 — Data input/output 11 |
| পিন B7 | VSS — Ground |
| পিন B8 | DQ12 — Data input/output 12 |
| পিন B9 | DQ13 — Data input/output 13 |
| পিন B10 | VDD — Power supply (1.35V) |
| পিন B11 | DQ14 — Data input/output 14 |
| পিন B12 | DQ15 — Data input/output 15 |
সাধারণ ব্যবহার
K4B4G1646D-BCNB0 এর জন্য উপযুক্ত 6 অ্যাপ্লিকেশনs: Laptop Memory, Networking Equipment, Embedded Systems, Servers, Automotive Infotainment, Industrial Automation.
Laptop Memory
The K4B4G1646D-BCNB0 provides 4Gb DDR3L memory for laptops, offering 2133 Mbps data rate and 1.35V operation for power efficiency. Its 96-FBGA package fits compact motherboard designs, and the low voltage extends battery life. The high bandwidth supports multitasking and multimedia applications.
সুপারিশকৃত
Networking Equipment
In routers and switches, the K4B4G1646D-BCNB0 provides high-speed packet buffering with 2133 Mbps data rate. Its 1.35V operation reduces power consumption in always-on network devices. The 4Gb density supports large routing tables and QoS queues, ensuring smooth data flow.
সুপারিশকৃত
Embedded Systems
The K4B4G1646D-BCNB0 is ideal for embedded systems requiring high memory density and low power. Its 1.35V supply and 2133 Mbps speed enable fast data processing in industrial controllers and IoT gateways. The 96-FBGA package allows compact PCB layouts.
সুপারিশকৃত
Servers
In entry-level servers, the K4B4G1646D-BCNB0 provides reliable, high-speed memory for virtualization and database workloads. Its 4Gb density and 2133 Mbps data rate offer a balance of capacity and performance, while 1.35V operation reduces data center power costs.
সুপারিশকৃত
Automotive Infotainment
The K4B4G1646D-BCNB0 supports automotive infotainment systems with high-speed data processing for navigation, audio, and video. Its 1.35V operation is suitable for automotive power budgets, and the 96-FBGA package withstands vibration. The 2133 Mbps data rate ensures smooth multimedia playback.
সুপারিশকৃত
Industrial Automation
The K4B4G1646D-BCNB0 provides reliable memory for industrial controllers and PLCs, with 2133 Mbps data rate for real-time processing. Its 1.35V operation reduces heat generation in sealed enclosures. The 4Gb density supports complex control algorithms and data logging.
সুপারিশকৃত
সুপারিশকৃত পণ্যের সারসংক্ষেপ
এর জন্য ইঞ্জিনিয়ারিং রেফারেন্স ডেটা K4B4G1646D-BCNB0 — তুলনা, ডিজাইন গাইডেন্স এবং কমপ্লায়েন্স তথ্য।
নির্বাচন গাইড
বিকল্পের সাথে তুলনা
| পারামিটার | এই পণ্য | K4B4G1646D-BCMA | K4B4G1646D-BFMA | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 2133 Mbps | 1866 Mbps | 2133 Mbps | 2133 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| RoHS Compliant | Yes | Yes | Yes | Yes |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 95°C |
মূল পার্থক্যসমূহ
- Higher data rate than BCMA variant (বনামK4B4G1646D-BCMA)
- Low power 1.35V operation (বনামMT41K256M16TW-107)
- RoHS and halogen-free compliance (বনামIS43TR16512B-107MBL)
ডিজাইন নোট
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route data lines with matched lengths to ensure signal integrity at 2133 Mbps.
The K4B4G1646D-BCNB0 operates up to 85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for thermal metrics.
Follow the layout guidelines in the Samsung datasheet for DDR3 routing. Maintain proper trace impedance (typically 40-50 ohms) and minimize stub lengths. Use series termination resistors for address/control lines if recommended.
কমপ্লায়েন্স তথ্য
RoHS compliant and halogen-free per Samsung datasheet. REACH and conflict minerals status not specified in provided data.
