K4B4G1646D-BCNB0 - 4Gb DDR3L SDRAM 2133Mbps | Samsung
N.º de pieza: K4B4G1646D-BCNB0 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $8.5 | $8,50 |
| 10 | $7.8 | $78,00 |
| 100 | $7.2 | $720,00 |
| 500 | $6.8 | $3.400,00 |
| 1.000 | $6.5 | $6.500,00 |
K4B4G1646D-BCNB0 Descripción general
DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, 256M x 16 organization, 2133 Mbps data rate, and 1.35V supply voltage. The device supports programmable CAS latency, on-die termination (ODT), and internal self-calibration, ensuring signal integrity and reliable operation. The 96-ball FBGA package offers a compact footprint suitable for space-constrained designs.
Technically, the K4B4G1646D-BCNB0 utilizes Samsung's advanced DRAM process technology, providing high-speed performance with low power consumption. It includes features such as posted CAS, programmable CWL, and asynchronous reset, which enhance system flexibility and reliability. The device operates over a temperature range of 0°C to 85°C, making it suitable for commercial applications.
Typical applications include laptops, servers, networking equipment, and embedded systems requiring high-density, low-power memory. Its 1.35V operation makes it ideal for battery-powered devices where power efficiency is paramount.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and proper termination for the address/control lines.
Alternativas directas para K4B4G1646D-BCNB0 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con K4B4G1646D-BCNB0 (mismo factor de forma y huella) — difiere en Package, Supply Voltage, Data Rate, Density, Interface.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
K4B4G1646D-BCMA
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
K4B4G1646D-BFMA
✅ Sustitución directa✓ En stock
$6.5 / unidad
Ver hoja de datos →K4B4G1646D-BCNB
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
MT41K256M16TW-107
✅ Sustitución directa ⚠️ Especificaciones sin verificar✓ En stock
$14.1 / unidad
Ver hoja de datos →IS43TR16512B-107MBL
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
K4B4G1646D-BCNB0 Valores máximos y características eléctricas
| Density | 4 Gb |
| Organización de memoria | 256M x 16 |
| Velocidad de datos | 2133 Mbps/pin |
| Tensión de alimentación | 1.35 V (DDR3L) |
| Encapsulado | 96-FBGA |
| Temperatura de funcionamiento | 0°C to 85°C |
| Lead-Free | Yes |
| Sin halógenos | Yes |
| RoHS Compliant | Yes |
| Interfaz | DDR3L SDRAM |
| Tipo de montaje | Surface Mount |
| Número de pines | 96 |
| Die | D-die |
Configuración de pines de K4B4G1646D-BCNB0
| Pin A1 | VDD — Power supply (1.35V) |
| Pin A2 | DQ0 — Data input/output 0 |
| Pin A3 | DQ1 — Data input/output 1 |
| Pin A4 | VSS — Ground |
| Pin A5 | DQ2 — Data input/output 2 |
| Pin A6 | DQ3 — Data input/output 3 |
| Pin A7 | VDD — Power supply (1.35V) |
| Pin A8 | DQ4 — Data input/output 4 |
| Pin A9 | DQ5 — Data input/output 5 |
| Pin A10 | VSS — Ground |
| Pin A11 | DQ6 — Data input/output 6 |
| Pin A12 | DQ7 — Data input/output 7 |
| Pin B1 | VSS — Ground |
| Pin B2 | DQ8 — Data input/output 8 |
| Pin B3 | DQ9 — Data input/output 9 |
| Pin B4 | VDD — Power supply (1.35V) |
| Pin B5 | DQ10 — Data input/output 10 |
| Pin B6 | DQ11 — Data input/output 11 |
| Pin B7 | VSS — Ground |
| Pin B8 | DQ12 — Data input/output 12 |
| Pin B9 | DQ13 — Data input/output 13 |
| Pin B10 | VDD — Power supply (1.35V) |
| Pin B11 | DQ14 — Data input/output 14 |
| Pin B12 | DQ15 — Data input/output 15 |
Aplicaciones típicas
K4B4G1646D-BCNB0 es adecuado para 6 aplicacións: Laptop Memory, Networking Equipment, Embedded Systems, Servers, Automotive Infotainment, Industrial Automation.
Laptop Memory
The K4B4G1646D-BCNB0 provides 4Gb DDR3L memory for laptops, offering 2133 Mbps data rate and 1.35V operation for power efficiency. Its 96-FBGA package fits compact motherboard designs, and the low voltage extends battery life. The high bandwidth supports multitasking and multimedia applications.
Recomendado
Networking Equipment
In routers and switches, the K4B4G1646D-BCNB0 provides high-speed packet buffering with 2133 Mbps data rate. Its 1.35V operation reduces power consumption in always-on network devices. The 4Gb density supports large routing tables and QoS queues, ensuring smooth data flow.
Recomendado
Embedded Systems
The K4B4G1646D-BCNB0 is ideal for embedded systems requiring high memory density and low power. Its 1.35V supply and 2133 Mbps speed enable fast data processing in industrial controllers and IoT gateways. The 96-FBGA package allows compact PCB layouts.
Recomendado
Servers
In entry-level servers, the K4B4G1646D-BCNB0 provides reliable, high-speed memory for virtualization and database workloads. Its 4Gb density and 2133 Mbps data rate offer a balance of capacity and performance, while 1.35V operation reduces data center power costs.
Recomendado
Automotive Infotainment
The K4B4G1646D-BCNB0 supports automotive infotainment systems with high-speed data processing for navigation, audio, and video. Its 1.35V operation is suitable for automotive power budgets, and the 96-FBGA package withstands vibration. The 2133 Mbps data rate ensures smooth multimedia playback.
Recomendado
Industrial Automation
The K4B4G1646D-BCNB0 provides reliable memory for industrial controllers and PLCs, with 2133 Mbps data rate for real-time processing. Its 1.35V operation reduces heat generation in sealed enclosures. The 4Gb density supports complex control algorithms and data logging.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para K4B4G1646D-BCNB0 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | K4B4G1646D-BCMA | K4B4G1646D-BFMA | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 2133 Mbps | 1866 Mbps | 2133 Mbps | 2133 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| RoHS Compliant | Yes | Yes | Yes | Yes |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 95°C |
Diferenciadores clave
- Higher data rate than BCMA variant (frente a K4B4G1646D-BCMA)
- Low power 1.35V operation (frente a MT41K256M16TW-107)
- RoHS and halogen-free compliance (frente a IS43TR16512B-107MBL)
Notas de diseño
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route data lines with matched lengths to ensure signal integrity at 2133 Mbps.
The K4B4G1646D-BCNB0 operates up to 85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for thermal metrics.
Follow the layout guidelines in the Samsung datasheet for DDR3 routing. Maintain proper trace impedance (typically 40-50 ohms) and minimize stub lengths. Use series termination resistors for address/control lines if recommended.
Información de cumplimiento
RoHS compliant and halogen-free per Samsung datasheet. REACH and conflict minerals status not specified in provided data.
