K4B4G1646D-BCNB0 - 4Gb DDR3L SDRAM 2133Mbps | Samsung
料号： K4B4G1646D-BCNB0 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
K4B4G1646D-BCNB0 概述
DDR3L SDRAM is a type of synchronous dynamic random-access memory that operates at a lower voltage (1.35V) compared to standard DDR3 (1.5V), reducing power consumption while maintaining high bandwidth. It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock signal, effectively doubling the data rate. DDR3L is commonly used in mobile devices, embedded systems, and servers where power efficiency is critical.
Key features include a 4Gb density, 256M x 16 organization, 2133 Mbps data rate, and 1.35V supply voltage. The device supports programmable CAS latency, on-die termination (ODT), and internal self-calibration, ensuring signal integrity and reliable operation. The 96-ball FBGA package offers a compact footprint suitable for space-constrained designs.
Technically, the K4B4G1646D-BCNB0 utilizes Samsung's advanced DRAM process technology, providing high-speed performance with low power consumption. It includes features such as posted CAS, programmable CWL, and asynchronous reset, which enhance system flexibility and reliability. The device operates over a temperature range of 0°C to 85°C, making it suitable for commercial applications.
Typical applications include laptops, servers, networking equipment, and embedded systems requiring high-density, low-power memory. Its 1.35V operation makes it ideal for battery-powered devices where power efficiency is paramount.
When designing with this memory, ensure proper decoupling capacitors near the power pins and follow the layout guidelines in the datasheet to minimize signal integrity issues. The device requires a stable 1.35V supply and proper termination for the address/control lines.
直接替换替代料： K4B4G1646D-BCNB0 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： K4B4G1646D-BCNB0 （相同外形与封装尺寸） ——差异在于 Package, Supply Voltage, Data Rate, Density, Interface.
快速对比工具——选择替代料号进行并排对比：
K4B4G1646D-BCMA
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
K4B4G1646D-BFMA
✅ 直接替换✓ 有现货
$6.5 / 个
查看数据手册 →K4B4G1646D-BCNB
✅ 直接替换📋 参考替代料（不在目录中）
MT41K256M16TW-107
✅ 直接替换 ⚠️ 规格未核验✓ 有现货
$14.1 / 个
查看数据手册 →IS43TR16512B-107MBL
✅ 直接替换 ⚠️ 规格未核验📋 参考替代料（不在目录中）
K4B4G1646D-BCNB0 最大额定值与电气特性
| Density | 4 Gb |
| 存储组织 | 256M x 16 |
| 数据速率 | 2133 Mbps/pin |
| 电源电压 | 1.35 V (DDR3L) |
| 封装 | 96-FBGA |
| 工作温度 | 0°C to 85°C |
| Lead-Free | Yes |
| 无卤 | Yes |
| RoHS Compliant | Yes |
| 接口 | DDR3L SDRAM |
| 安装类型 | Surface Mount |
| 引脚数 | 96 |
| Die | D-die |
K4B4G1646D-BCNB0 引脚配置
| 引脚 A1 | VDD — Power supply (1.35V) |
| 引脚 A2 | DQ0 — Data input/output 0 |
| 引脚 A3 | DQ1 — Data input/output 1 |
| 引脚 A4 | VSS — Ground |
| 引脚 A5 | DQ2 — Data input/output 2 |
| 引脚 A6 | DQ3 — Data input/output 3 |
| 引脚 A7 | VDD — Power supply (1.35V) |
| 引脚 A8 | DQ4 — Data input/output 4 |
| 引脚 A9 | DQ5 — Data input/output 5 |
| 引脚 A10 | VSS — Ground |
| 引脚 A11 | DQ6 — Data input/output 6 |
| 引脚 A12 | DQ7 — Data input/output 7 |
| 引脚 B1 | VSS — Ground |
| 引脚 B2 | DQ8 — Data input/output 8 |
| 引脚 B3 | DQ9 — Data input/output 9 |
| 引脚 B4 | VDD — Power supply (1.35V) |
| 引脚 B5 | DQ10 — Data input/output 10 |
| 引脚 B6 | DQ11 — Data input/output 11 |
| 引脚 B7 | VSS — Ground |
| 引脚 B8 | DQ12 — Data input/output 12 |
| 引脚 B9 | DQ13 — Data input/output 13 |
| 引脚 B10 | VDD — Power supply (1.35V) |
| 引脚 B11 | DQ14 — Data input/output 14 |
| 引脚 B12 | DQ15 — Data input/output 15 |
典型应用
K4B4G1646D-BCNB0 适用于 6 应用s: Laptop Memory, Networking Equipment, Embedded Systems, Servers, Automotive Infotainment, Industrial Automation.
Laptop Memory
The K4B4G1646D-BCNB0 provides 4Gb DDR3L memory for laptops, offering 2133 Mbps data rate and 1.35V operation for power efficiency. Its 96-FBGA package fits compact motherboard designs, and the low voltage extends battery life. The high bandwidth supports multitasking and multimedia applications.
推荐
Networking Equipment
In routers and switches, the K4B4G1646D-BCNB0 provides high-speed packet buffering with 2133 Mbps data rate. Its 1.35V operation reduces power consumption in always-on network devices. The 4Gb density supports large routing tables and QoS queues, ensuring smooth data flow.
推荐
Embedded Systems
The K4B4G1646D-BCNB0 is ideal for embedded systems requiring high memory density and low power. Its 1.35V supply and 2133 Mbps speed enable fast data processing in industrial controllers and IoT gateways. The 96-FBGA package allows compact PCB layouts.
推荐
Servers
In entry-level servers, the K4B4G1646D-BCNB0 provides reliable, high-speed memory for virtualization and database workloads. Its 4Gb density and 2133 Mbps data rate offer a balance of capacity and performance, while 1.35V operation reduces data center power costs.
推荐
Automotive Infotainment
The K4B4G1646D-BCNB0 supports automotive infotainment systems with high-speed data processing for navigation, audio, and video. Its 1.35V operation is suitable for automotive power budgets, and the 96-FBGA package withstands vibration. The 2133 Mbps data rate ensures smooth multimedia playback.
推荐
Industrial Automation
The K4B4G1646D-BCNB0 provides reliable memory for industrial controllers and PLCs, with 2133 Mbps data rate for real-time processing. Its 1.35V operation reduces heat generation in sealed enclosures. The 4Gb density supports complex control algorithms and data logging.
推荐
推荐产品汇总
工程参考数据： K4B4G1646D-BCNB0 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | K4B4G1646D-BCMA | K4B4G1646D-BFMA | MT41K256M16TW-107 |
|---|---|---|---|---|
| Package | 96-FBGA | 96-FBGA | 96-FBGA | 96-FBGA |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Micron Technology |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Data Rate | 2133 Mbps | 1866 Mbps | 2133 Mbps | 2133 Mbps |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| RoHS Compliant | Yes | Yes | Yes | Yes |
| Operating Temperature | 0°C to 85°C | 0°C to 85°C | 0°C to 85°C | 0°C to 95°C |
关键差异点
- Higher data rate than BCMA variant （对比 K4B4G1646D-BCMA)
- Low power 1.35V operation （对比 MT41K256M16TW-107)
- RoHS and halogen-free compliance （对比 IS43TR16512B-107MBL)
设计说明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Use a solid ground plane and route data lines with matched lengths to ensure signal integrity at 2133 Mbps.
The K4B4G1646D-BCNB0 operates up to 85°C. Ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance that should be considered; refer to the datasheet for thermal metrics.
Follow the layout guidelines in the Samsung datasheet for DDR3 routing. Maintain proper trace impedance (typically 40-50 ohms) and minimize stub lengths. Use series termination resistors for address/control lines if recommended.
合规信息
RoHS compliant and halogen-free per Samsung datasheet. REACH and conflict minerals status not specified in provided data.
