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Micron Technology

MT40A1G8AG-062E AUT:R - 8Gb DDR4-3200 x8 78-FBGA | Micron

Name: MT40A1G8AG-062E AUT:R - 8Gb DDR4-3200 x8 78-FBGA | Micron
Brand: Micron Technology
SKU: MT40A1G8AG-062E AUT:R

MPN: MT40A1G8AG-062E AUT:R ✓ সক্রিয়

1.2 V (typ) Vdss 78-FBGA (7.5 x 11 mm) Package 1600 MHz Speed DDR4 SDRAM Memory

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MT40A1G8AG-062E AUT:R সারাংশ

The Micron MT40A1G8AG-062E AUT:R is an automotive-grade 8 Gbit DDR4 SDRAM organized as 1G x 8, housed in a 78-ball Fine-Pitch Ball Grid Array (FBGA, 7.5 x 11 mm) and qualified to AEC-Q100 for in-vehicle electronic systems. It operates from a 1.2 V VDD/VDDQ supply and clocks up to 1600 MHz (DDR4-3200 data rate), delivering a maximum access time of 19 ns. The device ships in Tape-and-Reel packaging with the AUT suffix denoting automotive temperature grade and the R suffix denoting the reel pack orientation.

DDR4 (Double Data Rate 4) SDRAM is the fourth generation of synchronous DRAM, succeeding DDR3 by doubling the minimum data rate, lowering the I/O voltage to 1.2 V from 1.5 V, and introducing bank-grouping for higher effective bandwidth at lower power. Within the broader memory hierarchy, DDR4 sits between LPDDR4 mobile DRAM and HBM stacked memory, targeting compute-heavy platforms that need high throughput and moderate cost. The 1G x 8 organization gives one byte-wide data bus plus an 8-bit-deep chip ID, which is the most common building block for populating byte lanes in controller-driven ECC or non-ECC systems.

Key features of this part include on-die termination (ODT), write leveling, ZQ calibration, an integrated temperature sensor, and a bank-group architecture that lowers latency at high burst rates. Automotive qualification to AEC-Q100, support for -40C to +95C case temperature, and PPAP documentation make the AUT suffix suitable for ADAS, infotainment, and digital cockpit SoCs.

Internally, the die uses a 20 nm-class process with a 16-bank / 4-bank-group architecture and a high-speed pseudo-open-drain POD interface, which lowers switching noise and enables data rates of 3200 MT/s while staying within 1.2 V I/O. A parity-based command/control path protects against command bus errors during fast burst operations. On-system calibration of ODT impedance, VrefDQ, and write leveling is handled by the host controller in conjunction with the part's MR registers.

Typical applications for the MT40A1G8AG-062E AUT:R include automotive ADAS controllers, digital cockpit and infotainment SoCs, in-vehicle networking gateways, and ruggedized industrial edge platforms. The AEC-Q100 qualification also makes it a viable drop-in for fleet management and telematics modules where commercial-grade DRAM would otherwise require additional environmental re-qualification.

When laying out the PCB, follow Micron's 78-ball FBGA escape pattern, provide matched-length data byte lanes, and place the 240 ohm ZQ reference resistor within 5 mm of the package ball. Maintain proper decoupling - 0.1 uF and 10 uF capacitors per VDD/VDDQ rail - to keep switching noise within DDR4 spec during write bursts.

এর জন্য ড্রপ-ইন বিকল্প MT40A1G8AG-062E AUT:R — একই package, pin-to-pin compatible। ভিন্ন package-এর যেসব পার্টে PCB rework প্রয়োজন সেগুলো বাদ দেওয়া হয়েছে।