MT40A1G8AG-062E AUT:R - 8Gb DDR4-3200 x8 78-FBGA | Micron
MPN: MT40A1G8AG-062E AUT:R ✓ Hoạt độngMT40A1G8AG-062E AUT:R Tóm tắt
DDR4 (Double Data Rate 4) SDRAM is the fourth generation of synchronous DRAM, succeeding DDR3 by doubling the minimum data rate, lowering the I/O voltage to 1.2 V from 1.5 V, and introducing bank-grouping for higher effective bandwidth at lower power. Within the broader memory hierarchy, DDR4 sits between LPDDR4 mobile DRAM and HBM stacked memory, targeting compute-heavy platforms that need high throughput and moderate cost. The 1G x 8 organization gives one byte-wide data bus plus an 8-bit-deep chip ID, which is the most common building block for populating byte lanes in controller-driven ECC or non-ECC systems.
Key features of this part include on-die termination (ODT), write leveling, ZQ calibration, an integrated temperature sensor, and a bank-group architecture that lowers latency at high burst rates. Automotive qualification to AEC-Q100, support for -40C to +95C case temperature, and PPAP documentation make the AUT suffix suitable for ADAS, infotainment, and digital cockpit SoCs.
Internally, the die uses a 20 nm-class process with a 16-bank / 4-bank-group architecture and a high-speed pseudo-open-drain POD interface, which lowers switching noise and enables data rates of 3200 MT/s while staying within 1.2 V I/O. A parity-based command/control path protects against command bus errors during fast burst operations. On-system calibration of ODT impedance, VrefDQ, and write leveling is handled by the host controller in conjunction with the part's MR registers.
Typical applications for the MT40A1G8AG-062E AUT:R include automotive ADAS controllers, digital cockpit and infotainment SoCs, in-vehicle networking gateways, and ruggedized industrial edge platforms. The AEC-Q100 qualification also makes it a viable drop-in for fleet management and telematics modules where commercial-grade DRAM would otherwise require additional environmental re-qualification.
When laying out the PCB, follow Micron's 78-ball FBGA escape pattern, provide matched-length data byte lanes, and place the 240 ohm ZQ reference resistor within 5 mm of the package ball. Maintain proper decoupling - 0.1 uF and 10 uF capacitors per VDD/VDDQ rail - to keep switching noise within DDR4 spec during write bursts.
Bộ thay thế dễ dàng lắp đặt cho MT40A1G8AG-062E AUT:R — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
MT40A1G8AG-062E AIT:R
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A1G8AG-062E AUT:R TR
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A1G8AG-062E-AUT
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A1G8AG-062E:R
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A1G8AG-062E:R
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
MT40A1G8AG-062E AUT:R Tỷ lệ tối đa & tính chất điện
| Kiểu bộ nhớ | DDR4 SDRAM |
| Kích thước bộ nhớ | 8 Gbit (1G x 8) |
| Memory Organization | 1G x 8 |
| Tần số xung maksimum | 1600 MHz |
| Tốc độ dữ liệu | DDR4-3200 MT/s |
| Maximum Access Time | 19 ns |
| Supply Voltage VDD/VDDQ | 1.2 V (typ) |
| Loại giao diện | Parallel (POD 1.2V) |
| Hộp | 78-FBGA (7.5 x 11 mm) |
| Operating Temperature Grade | Automotive (AUT) -40C to +95C case |
| Automotive Qualification | AEC-Q100 |
| On-Die Termination | Yes (ODT) |
| Write Leveling | Yes |
| ZQ Calibration | Yes (240 ohm reference) |
| Kiểu lắp đặt | Surface Mount (BGA) |
| Packaging | Tape & Reel (R suffix) |
Hướng dẫn cấu hình chân MT40A1G8AG-062E AUT:R 78-fbga (7.5 x 11 mm)
Cấu hình chân cho MT40A1G8AG-062E AUT:R (78-fbga (7.5 x 11 mm) gói). IC số này bao gồm chân GPIO, giao diện truyền thông (UART, SPI, I2C) và chân nguồn. Tham khảo tài liệu thông số kỹ thuật của nhà sản xuất để biết các chức năng chân thay thế và tùy chọn cấu hình. Cực kỳ quan trọng cho thiết kế hệ thống tích hợp và lập trình PCB.
Không có dữ liệu chân cụ thể sẵn có cho MT40A1G8AG-062E AUT:R.
Tham khảo: tài liệu kỹ thuật cho cấu hình chân đầy đủ.
Ứng dụng tiêu biểu
MT40A1G8AG-062E AUT:R phù hợp cho 6 Áp dụngs: Automotive ADAS Controllers, Digital Cockpit and Infotainment SoCs, In-Vehicle Networking Gateways, Ruggedized Industrial Edge Platforms, Telematics and Fleet Management Modules, Automotive Camera and Vision Modules.
Automotive ADAS Controllers
Why the MT40A1G8AG-062E AUT:R fits ADAS: with 8 Gbit density in a 1G x 8 organization and DDR4-3200 data rate (3200 MT/s), the part supplies the high-bandwidth working memory required by vision and radar SoCs. The -40C to +95C case temperature range and AEC-Q100 qualification let it survive under-hood, behind-windshield, and behind-fascia mounting, where commercial DRAM would fail cold-start or thermal-cycling tests. Used as the SoC-attached DRAM pool, the device supports sustained 25.6 GB/s reads across the 64-bit host bus while keeping VDD/VDDQ at 1.2 V to minimize 12 V battery drain. Compared with lower-grade DDR4, the AUT:R variant delivers AEC-Q100 PPAP documentation required by OEM programs.
Được đề xuất
Digital Cockpit and Infotainment SoCs
Why it fits the digital cockpit: the 78-ball FBGA (7.5 x 11 mm) and 1.2 V I/O rail let board designers place two ranks in a stacked configuration to feed high-resolution multi-display SoCs without thermal-stress issues. DDR4-3200 enables 4K UI composition, instrument-cluster graphics, and rear-seat entertainment simultaneously. The AEC-Q100 qualification and -40C to +95C case temperature let the same BOM carry the system through cold-start mornings and summer cabin temperatures. On-die termination, write leveling, and ZQ calibration simplify the controller's training sequence and reduce PCB-layer count.
Được đề xuất
In-Vehicle Networking Gateways
Why it fits gateway ECUs: 8 Gbit is enough to buffer CAN-FD, automotive Ethernet, and SOME/IP frames before routing to domain controllers, and DDR4-3200 keeps latency deterministic under burst loads. The AEC-Q100-grade DRAM also lets gateway ECUs share a single BOM across vehicle variants that differ in features, simplifying supply. Compared with LPDDR4, DDR4 standard package allows higher-density stacking and more straightforward board-level rework during platform bring-up.
Được đề xuất
Ruggedized Industrial Edge Platforms
Why it fits the edge: industrial PCs, machine-vision controllers, and robotics platforms exposed to factory-floor temperature swings benefit from the AUT-grade -40C to +95C case range and AEC-Q100 reliability stress. DDR4-3200 with on-die termination keeps signal integrity on long board traces inside metal enclosures. The 78-ball FBGA 7.5 x 11 mm footprint is mechanically robust against vibration, unlike larger thin-package DRAMs.
Được đề xuất
Telematics and Fleet Management Modules
Why it fits telematics: cellular V2X modules and fleet trackers need compact, automotive-qualified DRAM that survives -40C cold-soak and +95C under-dash ambient. DDR4-3200 supports simultaneous LTE/5G modem buffering, GNSS processing, and over-the-air update staging. The 1G x 8 organization simplifies ECC or non-ECC configuration for system integrators building platforms on the same SoC family.
Được đề xuất
Automotive Camera and Vision Modules
Why it fits camera modules: surround-view and driver-monitoring cameras need high-throughput memory for ISP-to-SoC hand-off. The MT40A1G8AG-062E AUT:R delivers DDR4-3200 bandwidth on a compact 78-ball FBGA, fitting inside the camera housing next to the image sensor. AEC-Q100 grading ensures the memory survives the long thermal cycles of in-cabin and behind-mirror mounting.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho MT40A1G8AG-062E AUT:R — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | MT40A1G8AG-062E AIT:R | MT40A1G8AG-062E AUT:R TR | MT40A1G8AG-062E-AUT | MT40A1G8AG-062E:R |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory |
| Package | 78-FBGA (7.5x11) | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | DDR4-3200 MT/s | DDR4-3200 MT/s | DDR4-3200 MT/s | DDR4-3200 MT/s | DDR4-3200 MT/s |
| Temperature Grade | Automotive -40C to +95C case | Industrial -40C to +85C | Automotive -40C to +95C case | Automotive -40C to +95C case | Commercial 0C to +95C |
| AEC-Q100 Qualification | Yes | No (industrial only) | Yes | Yes | No (commercial only) |
| Packaging Form | Tape & Reel (R) | Tape & Reel (R) | Tape & Reel (TR) | Tray | Tray / Reel |
Bảo phân biệt quan trọng
- Automotive AEC-Q100 qualification with -40C to +95C case temp (vsMT40A1G8AG-062E AIT:R)
- Tape-and-reel packaging for high-volume automotive production (vsMT40A1G8AG-062E-AUT (tray))
- 8 Gbit DDR4-3200 density in compact 78-ball FBGA (vsMT40A1G8AG-062E:R (Alliance Memory))
Ghi chú thiết kế
Escape the 78-ball FBGA using Micron's recommended 4-layer ball pattern. Provide matched-length traces within each DQ byte lane (delta <5 ps), keep the 240 ohm 1 percent ZQ reference resistor within 5 mm of the ZQ ball, and add 0.1 uF plus 10 uF decoupling on every VDD/VDDQ rail.
Estimated: at sustained DDR4-3200 reads the part dissipates roughly 0.6-0.8 W. With the standard FBGA theta-JA near 35 C/W, junction-to-ambient rise is ~25 C at room temperature. Maintain the -40C to +95C case limit and provide copper pour under the BGA for proper heat spreading.
Do not confuse the AUT (automotive) suffix with AIT (industrial) or the plain R-grade. Only AUT variants carry AEC-Q100 PPAP documentation. Mixing in a commercial DDR4 during platform bring-up can later force a costly re-qualification when the OEM demands AEC-Q100 documentation.
Thông tin tuân thủ
AUT suffix confirms AEC-Q100 qualification per Micron's automotive part catalog. RoHS and REACH compliant per Micron product page; halogen-free status not explicitly listed.
