MT40A1G8AG-062E AUT:R - 8Gb DDR4-3200 x8 78-FBGA | Micron
MPN: MT40A1G8AG-062E AUT:R ✓ פעילMT40A1G8AG-062E AUT:R סקירה
DDR4 (Double Data Rate 4) SDRAM is the fourth generation of synchronous DRAM, succeeding DDR3 by doubling the minimum data rate, lowering the I/O voltage to 1.2 V from 1.5 V, and introducing bank-grouping for higher effective bandwidth at lower power. Within the broader memory hierarchy, DDR4 sits between LPDDR4 mobile DRAM and HBM stacked memory, targeting compute-heavy platforms that need high throughput and moderate cost. The 1G x 8 organization gives one byte-wide data bus plus an 8-bit-deep chip ID, which is the most common building block for populating byte lanes in controller-driven ECC or non-ECC systems.
Key features of this part include on-die termination (ODT), write leveling, ZQ calibration, an integrated temperature sensor, and a bank-group architecture that lowers latency at high burst rates. Automotive qualification to AEC-Q100, support for -40C to +95C case temperature, and PPAP documentation make the AUT suffix suitable for ADAS, infotainment, and digital cockpit SoCs.
Internally, the die uses a 20 nm-class process with a 16-bank / 4-bank-group architecture and a high-speed pseudo-open-drain POD interface, which lowers switching noise and enables data rates of 3200 MT/s while staying within 1.2 V I/O. A parity-based command/control path protects against command bus errors during fast burst operations. On-system calibration of ODT impedance, VrefDQ, and write leveling is handled by the host controller in conjunction with the part's MR registers.
Typical applications for the MT40A1G8AG-062E AUT:R include automotive ADAS controllers, digital cockpit and infotainment SoCs, in-vehicle networking gateways, and ruggedized industrial edge platforms. The AEC-Q100 qualification also makes it a viable drop-in for fleet management and telematics modules where commercial-grade DRAM would otherwise require additional environmental re-qualification.
When laying out the PCB, follow Micron's 78-ball FBGA escape pattern, provide matched-length data byte lanes, and place the 240 ohm ZQ reference resistor within 5 mm of the package ball. Maintain proper decoupling - 0.1 uF and 10 uF capacitors per VDD/VDDQ rail - to keep switching noise within DDR4 spec during write bursts.
חלופות תחליף ישיר עבור MT40A1G8AG-062E AUT:R — אותו מארז, תואם פין-לפין. חלקים במארז שונה הדורשים עיבוד מחדש של ה-PCB אינם נכללים.
MT40A1G8AG-062E AIT:R
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
MT40A1G8AG-062E AUT:R TR
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
MT40A1G8AG-062E-AUT
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
MT40A1G8AG-062E:R
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
MT40A1G8AG-062E:R
✅ Drop-In📋 חלופה להתייחסות (לא בקטלוג)
MT40A1G8AG-062E AUT:R דירוגים מרביים ומאפיינים חשמליים
| סוג זיכרון | DDR4 SDRAM |
| גודל זיכרון | 8 Gbit (1G x 8) |
| Memory Organization | 1G x 8 |
| תדר שעון מקסימלי | 1600 MHz |
| קצב נתונים | DDR4-3200 MT/s |
| Maximum Access Time | 19 ns |
| Supply Voltage VDD/VDDQ | 1.2 V (typ) |
| סוג ממשק | Parallel (POD 1.2V) |
| מארז | 78-FBGA (7.5 x 11 mm) |
| Operating Temperature Grade | Automotive (AUT) -40C to +95C case |
| Automotive Qualification | AEC-Q100 |
| On-Die Termination | Yes (ODT) |
| Write Leveling | Yes |
| ZQ Calibration | Yes (240 ohm reference) |
| סוג הרכבה | Surface Mount (BGA) |
| Packaging | Tape & Reel (R suffix) |
מדריך תצורת פינים של MT40A1G8AG-062E AUT:R 78-fbga (7.5 x 11 mm)
תצורת פינים עבור MT40A1G8AG-062E AUT:R (מארזת 78-fbga (7.5 x 11 mm)). מעגל משולב דיגיטלי זה כולל GPIO, ממשקי תקשורת (UART, SPI, I2C) ופיני מתח. יש לעיין בגיליון הנתונים של היצרן לפונקציות פינים חלופיות ולאפשרויות תצורה. חיוני לתכנון מערכות משובצות ולפריסת PCB.
אין נתוני פריסת פינים מפורטים עבור MT40A1G8AG-062E AUT:R.
עיינו ב- גיליון נתונים עבור תצורת פינים מלאה.
יישומים טיפוסיים
MT40A1G8AG-062E AUT:R מתאים עבור 6 יישוםs: Automotive ADAS Controllers, Digital Cockpit and Infotainment SoCs, In-Vehicle Networking Gateways, Ruggedized Industrial Edge Platforms, Telematics and Fleet Management Modules, Automotive Camera and Vision Modules.
Automotive ADAS Controllers
Why the MT40A1G8AG-062E AUT:R fits ADAS: with 8 Gbit density in a 1G x 8 organization and DDR4-3200 data rate (3200 MT/s), the part supplies the high-bandwidth working memory required by vision and radar SoCs. The -40C to +95C case temperature range and AEC-Q100 qualification let it survive under-hood, behind-windshield, and behind-fascia mounting, where commercial DRAM would fail cold-start or thermal-cycling tests. Used as the SoC-attached DRAM pool, the device supports sustained 25.6 GB/s reads across the 64-bit host bus while keeping VDD/VDDQ at 1.2 V to minimize 12 V battery drain. Compared with lower-grade DDR4, the AUT:R variant delivers AEC-Q100 PPAP documentation required by OEM programs.
מומלץ
Digital Cockpit and Infotainment SoCs
Why it fits the digital cockpit: the 78-ball FBGA (7.5 x 11 mm) and 1.2 V I/O rail let board designers place two ranks in a stacked configuration to feed high-resolution multi-display SoCs without thermal-stress issues. DDR4-3200 enables 4K UI composition, instrument-cluster graphics, and rear-seat entertainment simultaneously. The AEC-Q100 qualification and -40C to +95C case temperature let the same BOM carry the system through cold-start mornings and summer cabin temperatures. On-die termination, write leveling, and ZQ calibration simplify the controller's training sequence and reduce PCB-layer count.
מומלץ
In-Vehicle Networking Gateways
Why it fits gateway ECUs: 8 Gbit is enough to buffer CAN-FD, automotive Ethernet, and SOME/IP frames before routing to domain controllers, and DDR4-3200 keeps latency deterministic under burst loads. The AEC-Q100-grade DRAM also lets gateway ECUs share a single BOM across vehicle variants that differ in features, simplifying supply. Compared with LPDDR4, DDR4 standard package allows higher-density stacking and more straightforward board-level rework during platform bring-up.
מומלץ
Ruggedized Industrial Edge Platforms
Why it fits the edge: industrial PCs, machine-vision controllers, and robotics platforms exposed to factory-floor temperature swings benefit from the AUT-grade -40C to +95C case range and AEC-Q100 reliability stress. DDR4-3200 with on-die termination keeps signal integrity on long board traces inside metal enclosures. The 78-ball FBGA 7.5 x 11 mm footprint is mechanically robust against vibration, unlike larger thin-package DRAMs.
מומלץ
Telematics and Fleet Management Modules
Why it fits telematics: cellular V2X modules and fleet trackers need compact, automotive-qualified DRAM that survives -40C cold-soak and +95C under-dash ambient. DDR4-3200 supports simultaneous LTE/5G modem buffering, GNSS processing, and over-the-air update staging. The 1G x 8 organization simplifies ECC or non-ECC configuration for system integrators building platforms on the same SoC family.
מומלץ
Automotive Camera and Vision Modules
Why it fits camera modules: surround-view and driver-monitoring cameras need high-throughput memory for ISP-to-SoC hand-off. The MT40A1G8AG-062E AUT:R delivers DDR4-3200 bandwidth on a compact 78-ball FBGA, fitting inside the camera housing next to the image sensor. AEC-Q100 grading ensures the memory survives the long thermal cycles of in-cabin and behind-mirror mounting.
מומלץ
סיכום מוצרים מומלצים
נתוני עזר הנדסיים עבור MT40A1G8AG-062E AUT:R — השוואה, הנחיות תכנון ומידע על תאימות.
מדריך בחירה
השוואה עם חלופות
| פרמטר | מוצר זה | MT40A1G8AG-062E AIT:R | MT40A1G8AG-062E AUT:R TR | MT40A1G8AG-062E-AUT | MT40A1G8AG-062E:R |
|---|---|---|---|---|---|
| Brand | Micron Technology | Micron Technology | Micron Technology | Micron Technology | Alliance Memory |
| Package | 78-FBGA (7.5x11) | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same | 78-FBGA (7.5x11) - same |
| Density | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 | 1G x 8 |
| Data Rate | DDR4-3200 MT/s | DDR4-3200 MT/s | DDR4-3200 MT/s | DDR4-3200 MT/s | DDR4-3200 MT/s |
| Temperature Grade | Automotive -40C to +95C case | Industrial -40C to +85C | Automotive -40C to +95C case | Automotive -40C to +95C case | Commercial 0C to +95C |
| AEC-Q100 Qualification | Yes | No (industrial only) | Yes | Yes | No (commercial only) |
| Packaging Form | Tape & Reel (R) | Tape & Reel (R) | Tape & Reel (TR) | Tray | Tray / Reel |
מבדילים עיקריים
- Automotive AEC-Q100 qualification with -40C to +95C case temp (לעומתMT40A1G8AG-062E AIT:R)
- Tape-and-reel packaging for high-volume automotive production (לעומתMT40A1G8AG-062E-AUT (tray))
- 8 Gbit DDR4-3200 density in compact 78-ball FBGA (לעומתMT40A1G8AG-062E:R (Alliance Memory))
הערות תכנון
Escape the 78-ball FBGA using Micron's recommended 4-layer ball pattern. Provide matched-length traces within each DQ byte lane (delta <5 ps), keep the 240 ohm 1 percent ZQ reference resistor within 5 mm of the ZQ ball, and add 0.1 uF plus 10 uF decoupling on every VDD/VDDQ rail.
Estimated: at sustained DDR4-3200 reads the part dissipates roughly 0.6-0.8 W. With the standard FBGA theta-JA near 35 C/W, junction-to-ambient rise is ~25 C at room temperature. Maintain the -40C to +95C case limit and provide copper pour under the BGA for proper heat spreading.
Do not confuse the AUT (automotive) suffix with AIT (industrial) or the plain R-grade. Only AUT variants carry AEC-Q100 PPAP documentation. Mixing in a commercial DDR4 during platform bring-up can later force a costly re-qualification when the OEM demands AEC-Q100 documentation.
מידע על תאימות
AUT suffix confirms AEC-Q100 qualification per Micron's automotive part catalog. RoHS and REACH compliant per Micron product page; halogen-free status not explicitly listed.
