Power MOSFET Drivers
Products (426)
IR2127STRPBF - 600V High-Side Gate Driver IC | Infineon
The Infineon IR2127STRPBF is a 600 V tolerant single-channel high-side gate driver IC designed to drive IGBTs and power MOSFETs in switching power-conversion applications, supplied in an 8-pin SOIC package and shipped on a 7-inch tape-and-reel carrier. The device accepts a non-inverting logic-level PWM input and converts it to a floating gate-drive output capable of pulling the gate up with 250 mA source current and pulling it down with 500 mA sink current, allowing direct switching of large IGBTs and MOSFETs without intermediate buffers. A high-side gate driver IC is a category of power management semiconductor that level-shifts a low-voltage control signal referenced to logic ground to a high-voltage floating rail referenced to the source of a switching transistor. This level-shift is essential in half-bridge and full-bridge topologies where the high-side transistor's source pin swings between the DC bus and ground at the switching frequency. The IR2127 family is part of the broader gate-driver hierarchy: gate driver -> driver IC -> power management IC -> semiconductor, and shares design heritage with Infineon's broader high-voltage floating-channel driver portfolio. Key parametric features include a continuous operating offset voltage tolerance up to +600 V, dV/dt immunity across the high-side well, tolerance to negative transient voltages, and an integrated current-sense comparator that allows cycle-by-cycle over-current protection without an external sense amplifier. The supply range is 12 V to 20 V, propagation delay is approximately 200 ns, and the part is rated for operation across the -40C to +125C automotive temperature range with a Pb-free (PBF) matte-tin finish. The IR2127 uses a proprietary high-voltage level-shifter combined with a current-sense comparator. The floating channel is built on Infineon's SOI-based high-voltage BCD process, which provides the dV/dt immunity that older junction-isolated drivers lacked. The internal current-sense comparator eliminates one external op-amp in motor-drive and SMPS current-limit loops, saving PCB area and improving loop bandwidth. Typical applications include three-phase motor drives, half-bridge converters, solenoid and coil drivers, high-side switches in industrial automation, and switch-mode power supplies where a high-side transistor must be switched from a low-voltage MCU. The IR2127STRPBF is also widely used in class-D audio amplifiers and battery management systems requiring a robust floating gate driver. When designing with this device, ensure the bootstrap capacitor on the Vb-Vs rail is sized for the worst-case duty cycle and gate charge, and add a low-ESR bypass capacitor directly on the Vcc pin. For applications exceeding 600 V, add external transient-suppression diodes across Vb-Vs to protect against avalanche breakdown of the floating well. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IR2128SPBF - 600V High-Side/Low-Side MOSFET/IGBT Driver | Infineon
The Infineon IR2128SPBF is a single-channel current-sensing high-voltage, high-speed power MOSFET and IGBT gate driver with inverting logic input, housed in an 8-pin SOIC package. It features a 0.5A gate drive output, 600V high-voltage rating, proprietary HVIC and latch-immune CMOS technology for ruggedized monolithic construction, and an application-specific gate drive range of 20V for motor drive (IR2128 variant). The IR2128SPBF operates from a 10V-20V supply with 150ns typical propagation delay, and its logic input is compatible with standard CMOS or LSTTL outputs down to 3.3V logic levels. A gate driver IC is a power management semiconductor that translates low-power control signals from a microcontroller or analog controller into the high-current, high-voltage drive signals required to switch discrete power transistors such as MOSFETs and IGBTs. In the system hierarchy, a gate driver sits between a logic-level controller (MCU, FPGA, analog PWM controller) and the power stage (MOSFET, IGBT, SiC, GaN switch), and is itself a member of the broader power management IC family that includes voltage regulators, supervisors, and motor drivers. The IR2128SPBF belongs specifically to the high-side/low-side (half-bridge) driver subcategory. Key features include dV/dt immunity, negative transient voltage tolerance, fully operational capability to +600V, and integrated current sensing. The 8-pin SOIC package provides a compact footprint suitable for space-constrained power designs. The inverting input logic simplifies implementation in systems where the controller output is active-high but the power stage requires active-low drive signals. The IR2128SPBF utilizes Infineon's proprietary HVIC (High-Voltage Integrated Circuit) process technology with latch-immune CMOS construction. This combination enables monolithic integration of high-voltage level-shifting with low-voltage logic on a single die, eliminating the need for external bootstrap components in some configurations. The current-sensing capability allows the driver to monitor load current directly, simplifying protection circuit design in motor drive and power conversion applications. Typical applications include motor drive circuits, automotive power systems, switch-mode power supplies (SMPS), and high-voltage DC-DC converters. The wide operating voltage range and high-voltage tolerance make it particularly suitable for industrial motor control, where switching transients commonly exceed 500V. The automotive variant (IR21271) extends the gate drive range for IGBT applications in vehicles. When designing with this device, ensure proper PCB layout to minimize parasitic inductance in the gate drive loop. Use a low-impedance gate return path and place the driver as close to the power switch as possible. The supply bypass capacitor must be located within 5mm of the VCC pin to suppress switching transients. This page synthesizes distributor pricing, drop-in SOIC-8 alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IR2128STRPBF - 600V High-Side Gate Driver IC | Infineon
Infineon IR2128STRPBF is a 600 V single-channel high-side gate driver IC for IGBTs and MOSFETs, delivering 0.25 A source and 0.5 A sink drive currents in an 8-pin SOIC (0.154", 3.90 mm width) package. It operates from a 12 V to 20 V gate-drive supply with logic input compatible with 3.3 V CMOS/LSTTL. Per the Infineon datasheet, the part is fully operational to +600 V with dV/dt immunity and tolerates negative transient voltages at the VS node. The IR2128STRPBF includes over-current protection with a current-sense comparator and an open-drain fault output, simplifying protection implementation in motor-control and power-conversion designs. A high-side gate driver is a specialized power-management IC that level-shifts a low-voltage logic signal up to a floating high-voltage rail, allowing a low-side controller (such as a 3.3 V MCU) to switch an N-channel power MOSFET or IGBT placed on the high side of a half-bridge. High-side drivers sit inside the broader hierarchy of gate drivers -> power management ICs -> PMIC -> semiconductor, and they are indispensable in bridge-tied converters, three-phase inverters, and any topology where the low-side switch cannot deliver the required load current or voltage swing. Bootstrap supply architecture, used by the IR2128STRPBF, lets a single supply rail feed both low-side and high-side switch gates without a dedicated isolated DC/DC converter. Key features include a 200 ns typical propagation delay, integrated undervoltage lockout (UVLO) for the logic and gate-drive rails, current-sense comparator with programmable threshold, and a fault indicator output that pulls low to flag over-current events to the host controller. The CMOS/HVIC latch-immune process gives the IC monolithic robustness against dv/dt-induced false triggering on the high-side return (VS) node. Typical applications include general-purpose variable-frequency drives (VFD), IGBT/MOSFET modules in industrial inverters, three-phase induction-motor half-bridges (one IR2128STRPBF per phase), DC-DC buck/boost converters with high-side synchronous rectifiers, and switched-mode power supplies (SMPS) needing a single high-side switch. The 600 V rating covers 230 VAC and 400 VAC rectified rails with ample margin. Design considerations: keep the bootstrap diode and capacitor close to the VB-VS pins to minimize charge transients; a 1N4148 plus 1 uF ceramic cap is typical. Verify the VS-node dv/dt does not exceed the dV/dt rating during commutation, otherwise the floating-well can inject shoot-through. The current-sense resistor and RC filter at the CS pin set the over-current trip threshold.
IR2130STRPBF - 600V 3-Phase Gate Driver | Infineon | SOIC-28
The Infineon IR2130STRPBF is a 600 V high-voltage, high-speed three-phase gate driver IC for power MOSFETs and IGBTs, housed in a 28-pin SOIC Wide-Body (SOIC-28WB) package. It integrates three independent high-side and three independent low-side driver channels with typical 0.25 A source and 0.5 A sink gate-drive currents, and operates from a gate-drive supply (VCC) of 10 V to 20 V with logic inputs compatible with CMOS/LSTTL down to 2.5 V. A gate driver IC is a power-management semiconductor that level-shifts low-voltage control logic signals to the high-voltage domain required to switch the gates of power MOSFETs or IGBTs in bridge topologies. In the broader system taxonomy, the IR2130 belongs to the gate driver IC family, which sits hierarchically below power management ICs and above discrete half-bridge driver circuits; it is the critical interface between a microcontroller/MCU's PWM outputs and the high-current switching stage of motor drives, inverters, and SMPS. The IR2130STRPBF uses Infineon's proprietary HVIC (High-Voltage Integrated Circuit) technology, enabling a ruggedized monolithic construction fully operational to +600 V and tolerant to negative transient voltages on the phase node (dV/dt immune). It includes undervoltage lockout (UVLO) for all six channels, matched propagation delays across all channels for symmetric switching, a typical dead-time of 2.5 microseconds, and over-current shutdown that turns off all six outputs simultaneously while asserting a fault flag. An integrated ground-referenced operational amplifier provides analog feedback of bridge current through an external sense resistor. Typical applications include three-phase variable-frequency drives (VFDs) for AC induction and PMSM motors, brushless DC (BLDC) motor controllers in appliances, industrial servo drives, uninterruptible power supplies (UPS), and solar inverters. The wide 600 V rating also supports off-line industrial power conversion at 220-240 VAC rectified input. When designing with the IR2130STRPBF, always use bootstrap capacitors on each high-side channel and a dedicated bootstrap diode rated for at least the full DC bus voltage; bootstrap capacitor sizing should target a ripple of less than 10% of VCC under worst-case duty-cycle and switching conditions to prevent UVLO tripping. The current-sense op-amp output should be filtered to reject switching noise. This page synthesizes distributor pricing from DigiKey/Mouser, drop-in alternatives from the IR2130 family and competing gate-driver ICs, and practical design notes that go beyond the manufacturer datasheet.
IR2132SPBF - 600V 3-Phase Half-Bridge Gate Driver | Infineon
The Infineon IR2132SPBF is a 600 V, three-phase half-bridge gate driver IC housed in a 28-pin SOIC wide-body (SOIC-W) package, designed to drive N-channel power MOSFETs or IGBTs in three-phase bridge configurations. The device integrates six gate drive channels (three high-side floating, three low-side referenced) with 0.5 A source/sink drive capability, deadtime insertion, and undervoltage lockout (UVLO) protection for all six channels, delivering a single-IC solution for motor drive and inverter power stages. A gate driver is a power-conversion support IC that translates low-power logic-level PWM signals from a microcontroller or DSP into high-current gate-drive pulses capable of rapidly switching the gates of high-voltage MOSFETs or IGBTs. Within the power-management hierarchy, gate drivers sit one level above the switching transistors and one level below the control IC, providing the current amplification, level shifting, and isolation (in the high-side floating channels) required to operate a half-bridge or full-bridge topology. The IR2132SPBF uses Infineon's proprietary HVIC (high-voltage integrated circuit) process, which monolithically integrates the high-voltage level-shift stage with low-voltage CMOS logic on a single die. Key features include 600 V maximum offset voltage on the high-side floating channels, a gate-drive supply range of 10 V to 20 V, dV/dt immunity, tolerance to negative transient voltage on VS pins, and a typical deadtime of 0.8 us to prevent cross-conduction in the half-bridge legs. Logic inputs are CMOS/LSTTL compatible down to 2.5 V logic. The 'inverting' input variant means that a logic-high on HINx/LINx produces a logic-low on the corresponding gate output (HO/LO), simplifying logic inversion in some PWM schemes. Typical applications include three-phase variable-frequency drives (VFDs) for induction and BLDC motors, servo amplifiers, HVAC compressors, industrial pump drives, and uninterruptible power supplies (UPS). The wide-body SOIC-28 footprint is the industry-standard pinout for this driver family, which simplifies PCB layout and second-sourcing. The SPBF suffix indicates lead-free (PbF), RoHS-compliant, and tube packaging per Infineon's ordering nomenclature. When designing with the IR2132SPBF, use a bootstrap diode and capacitor on each high-side supply (VBx-VSx) sized to refresh the floating supply during the low-side on-time; 1 uF to 4.7 uF ceramic X7R capacitors are typical. Place the bootstrap diode close to the VB pin and use a low-ESR ceramic bypass on VCC. This page synthesizes distributor pricing, parametric comparison with sibling drivers, and practical bootstrap-design guidance not collected in the manufacturer datasheet alone.
IR2132STRPBF - 600V 3-Phase Gate Driver IC | Infineon
The Infineon IR2132STRPBF is a 600 V three-phase gate driver IC with integrated over-current protection, an operational amplifier, and fault reporting, housed in a 28-lead SOICWB (wide-body) surface-mount package. It features typical 0.25 A source and 0.5 A sink gate-drive currents, a 10 V to 20 V gate-drive supply range, and a 675 ns typical propagation delay. The IR2132STRPBF is rated for fully operational +600 V offset voltage and is tolerant to negative transient voltage with dV/dt immunity. A three-phase gate driver IC belongs to the broader category of gate drivers within the power management and motor-control semiconductor family. Gate drivers sit between low-power control logic (such as a microcontroller PWM output) and the high-power discrete switches (IGBTs or power MOSFETs) that actually commutate current in a motor or inverter. The three-phase topology specifically targets brushless DC (BLDC) and permanent-magnet synchronous motor (PMSM) drives, where six switches arranged in three half-bridges must be sequenced 120 electrical degrees apart. By integrating six gate-drive channels plus protection and an op-amp onto a single high-voltage die, the IR2132STRPBF eliminates dozens of discrete components and shrinks the inverter footprint. Key features include floating-channel bootstrap architecture that allows the high-side drivers to operate up to 600 V without an isolated supply, undervoltage lockout (UVLO) on all six channels that protects the power stage from insufficient gate-drive voltage, a current-sense op-amp that conditions shunt-resistor feedback for over-current protection, and a FAULT output that latches during a desaturation or OC event. The dead-time is internally fixed at approximately 0.8 µs to prevent shoot-through in the half-bridge. The 28-SOICWB package exposes a thermal pad for improved heat dissipation during continuous switching. Typical applications span industrial variable-frequency drives (VFDs), BLDC/PMSM motor controllers for appliances and pumps, uninterruptible power supplies (UPS), solar micro-inverters, and three-phase AC induction drives. With the global push toward electrification in HVAC, e-mobility, and factory automation, the IR2132STRPBF remains a workhorse part in the 600 V class. When designing with the IR2132STRPBF, observe the bootstrap-capacitor sizing rule that the bootstrap cap must recharge the high-side supply within every switching cycle - typically a 1 µF or larger ceramic is required for motor-PWM frequencies above 15 kHz. Place the VSS bypass capacitor directly between the VSO pin and the COM pin to keep the current-sense path quiet, and keep the OC-trip filter network close to the ITRIP pin to avoid false triggering from switching noise. This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical design notes that complement - but do not replace - the manufacturer datasheet.
IR21531DPBF - 600V Half-Bridge Gate Driver, 8-PDIP | Infineon
The Infineon IR21531DPBF is a 600 V self-oscillating half-bridge gate driver IC housed in an 8-pin PDIP through-hole package, integrating a high-voltage half-bridge driver with a CMOS 555-style front-end oscillator. It is a functional upgrade to the legacy IR2155/IR2151 gate drivers, offering tightened initial deadtime, a low temperature-coefficient deadtime, an integrated 15.6 V Vcc zener clamp, and true micropower startup. The device targets offline ballast and SMPS half-bridge topologies where one IC must generate both gate timing and level-shifted gate drive. A half-bridge gate driver is a power-management IC that produces two complementary gate-drive signals (high-side referenced to the switching node and low-side referenced to ground) for a pair of power MOSFETs or IGBTs arranged in a totem-pole half-bridge. Within the broader taxonomy, the IR21531DPBF sits in the gate-driver subcategory of power management ICs, above which are MOSFET/IGBT drivers, then switching power supply controllers. Its built-in oscillator means the half-bridge timing is set by a single external RT/CT pair, eliminating the need for a separate PWM controller. Key specifications include a 600 V half-bridge rating (allowing direct operation from rectified 230 V AC), typical 0.6 µs internal deadtime, a programmable oscillator, an SD (shutdown) function on the CT pin at 1/6 Vcc, increased undervoltage lockout hysteresis, and matched propagation delays for the high-side and low-side outputs. The exposed GND pin supports the high peak gate currents required to switch MOSFETs in the tens-of-nanoseconds transition region. The architecture is built on Infineon's high-voltage junction-isolation process, which integrates a 600 V level-shift structure on the same die as the 555-style oscillator. This monolithic integration reduces BOM count versus discrete driver + PWM designs and improves timing symmetry between the high-side and low-side channels, which directly lowers shoot-through risk in the half bridge. Typical applications include fluorescent and HID electronic ballasts, low-power SMPS half-bridge converters, CCFL backlight inverters for displays, and motor-drive half-bridge stages. The 600 V rating allows direct rectification of 230 V AC without an additional bootstrap-clamp circuit, and the 1/6 Vcc shutdown input provides an easy interface to a fault or timer circuit. When designing with this part, place a 100 nF (minimum) ceramic bypass capacitor directly on Vcc to keep the internal 15.6 V zener from absorbing fast switching transients, and select RT/CT to give an oscillator frequency well above the audible band (>20 kHz) for ballast applications. The bootstrap diode and capacitor must be sized for the worst-case high-side on-time per switching cycle. This page synthesizes distributor pricing, parametric drop-in alternatives, and PCB-oriented design notes that complement the manufacturer datasheet rather than repeating its tables.
IR21531STRPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
The Infineon IR21531STRPBF is a 600V self-oscillating half-bridge gate driver IC in an 8-pin SOIC package, designed to drive two N-channel MOSFETs or IGBTs in a half-bridge topology with integrated dead-time control. It features a programmable oscillator frequency set by an external RC network, a high-voltage level-shift stage tolerant of up to 600V on the high-side, a 15.6V internal clamp on VCC, and a 0.6 microsecond built-in dead-time to prevent shoot-through. The integrated bootstrap diode simplifies the high-side supply generation, requiring only an external bootstrap capacitor. A half-bridge gate driver is a power-management IC that converts low-voltage PWM or oscillator logic into two complementary high-current gate-drive signals capable of switching the high-side and low-side switches of a half-bridge. This category sits hierarchically under gate driver -> driver IC -> power management IC -> semiconductor. The self-oscillating variant integrates the timing function, removing the need for an external controller in simple topologies such as electronic ballasts, small motor drivers, and resonant converters. Key features include a 10V to 20V VCC supply range with internal 15.6V zener clamp, source/sink gate-drive currents of approximately 250 mA peak, matched propagation delays for symmetric switching, and CMOS Schmitt-triggered logic input. The internal bootstrap FET and dead-time generator reduce external component count to as few as a resistor, capacitor, and bootstrap capacitor. The 8-pin SOIC surface-mount package offers a small footprint suitable for high-density ballast and driver designs. Internally the device uses a high-voltage junction-isolation level-shifter to translate the low-side oscillator signal across the floating high-side supply rail. This architecture delivers robust high-side switching up to 600V while keeping the logic interface referenced to ground. The matched delay paths ensure balanced turn-on/turn-off timing, which directly translates into low dead-time distortion and predictable EMI behavior in the converter. Typical applications include HID and fluorescent electronic ballasts, DC-DC converters, motor driver half-bridges, class-D audio amplifiers, and any low-to-medium power half-bridge requiring a self-contained oscillator and driver. The Pb-free suffix indicates compliance with lead-free process and RoHS directives. When designing with the IR21531STRPBF, ensure the bootstrap capacitor is sized to refresh the high-side supply within the oscillator period, and verify that the switching frequency stays below the device's maximum capability to allow sufficient bootstrap recharge time. The RC timing components set the operating frequency, so 1% tolerance parts are recommended for accurate frequency control. This page synthesizes distributor pricing, drop-in alternatives in the SOIC-8 footprint, and practical design notes not collected in a single location in the manufacturer datasheet.
IR2153PBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IR2153PBF is a 600V self-oscillating half-bridge gate driver IC housed in an 8-pin PDIP through-hole package, integrating a high-voltage gate driver with a front-end RC oscillator similar to the industry-standard CMOS 555 timer. It delivers gate drive currents with 45 ns typical rise time and 80 ns typical fall time, supporting switching frequencies set by external RT/CT components from DC up to approximately 100 kHz. The device targets low- and medium-power MOSFET and IGBT half-bridge topologies where a compact self-contained driver replaces discrete oscillator + bootstrap + level-shift designs. A half-bridge gate driver is a power-management IC that produces two complementary gate-drive signals (HO and LO) referenced to a switching node (VS) and ground, enabling control of a high-side and low-side power switch in a totem-pole or full-bridge arrangement. The half-bridge driver family belongs to the broader gate-driver IC category, which sits under power management ICs and ultimately under power semiconductors. Compared to low-side-only drivers, half-bridge drivers add a high-voltage level-shifter and bootstrap mechanism that lets the high-side switch be driven when its source sits at the bus voltage. The IR2153PBF extends this with a built-in oscillator, eliminating external PWM generation hardware. Key features include integrated 600V half-bridge gate driver, 15.6V zener clamp on VCC, micropower startup, tighter initial deadtime control with a low temperature coefficient, shutdown feature (1/6th VCC) on the CT pin, and increased undervoltage lockout (UVLO) thresholds. The internal deadtime and shoot-through protection logic prevent simultaneous conduction of the high-side and low-side MOSFETs. Two output channels source and sink gate charge, producing clean edges on MOSFET gates even at moderate load currents. Architecturally, the IR2153PBF combines a CMOS 555-style oscillator, an internal bootstrap diode-equivalent level shifter, and high-side / low-side driver buffers rated to 600V. The 15.6V zener clamp on VCC protects the gate driver supply rail from transients, while the micropower startup reduces quiescent current to about 500 uA. The internal deadtime control is tightly toleranced to minimize shoot-through and improve efficiency across operating temperature. Typical applications include fluorescent lamp ballasts, HID ballasts, switch-mode power supplies (SMPS), motor drivers for small brushless DC fans and pumps, electronic transformers for halogen lighting, and other low-power half-bridge converter topologies. The wide VCC range (10V to 15.6V clamped) makes it compatible with standard 12V and 15V auxiliary rails. When designing with the IR2153PBF, place RT and CT close to the IC pins to minimize timing jitter, and use a low-ESR bypass capacitor on VCC. The bootstrap diode and capacitor values must be sized for the maximum high-side on-time to avoid UVLO triggering; Infineon recommends a fast-recovery bootstrap diode for high-frequency operation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet.
IR2153SPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
The Infineon IR2153SPBF is a 600 V self-oscillating half-bridge gate driver IC housed in an 8-pin SOIC (S) package with an integrated front-end oscillator similar to the industry-standard CMOS 555 timer. It combines a high-voltage half-bridge gate driver with programmable deadtime, a shutdown feature on the CT pin, and 15.6 V internal clamp on the gate drive supply, delivering the same timing-resistor-and-capacitor programming familiar to designers of classic 555-timer based SMPS half-bridge front ends. A half-bridge gate driver IC is a power-management building block that drives the high-side and low-side MOSFETs (or IGBTs) of a half-bridge converter from a single low-voltage control input. The IR2153 is part of the broader gate-driver hierarchy: gate driver -> half-bridge driver -> high-voltage gate driver -> power management IC -> semiconductor. Its self-oscillating topology places it in the SMPS controller family, where timing RT/CT sets the switching frequency and the internal logic adds the programmable deadtime needed to prevent shoot-through. Key features include 600 V offset voltage tolerance on the high-side channel, 15.6 V gate-clamp for protecting logic-level MOSFETs, programmable oscillator frequency through external RT and CT, internal deadtime control, and a CT-pin shutdown that disables both gate outputs with a logic-low signal. The internal bootstrap structure requires only a single low-voltage supply, simplifying PCB layout and reducing external component count compared with discrete half-bridge implementations. The architecture uses a CMOS 555-style oscillator feeding a high-side level shifter and a low-side driver, with both channels rated for negative transients on the switching node. This makes the part tolerant of the harsh dv/dt environment typical of half-bridge converters, and the integrated bootstrap diode (on the 'D' variant) further reduces BOM count. The RC input circuit category identifies it as programmable-timing, not fixed-frequency or PWM-controlled by an external MCU. Typical applications include self-oscillating half-bridge converters for electronic ballasts, switch-mode power supplies under 200 W, electronic transformers for halogen lamp replacement, and motor-driver front ends. The shutdown pin makes it suitable for ballast protection circuits that need to disable both gates on lamp removal. The 8-SOIC footprint is pin-compatible with other 8-pin gate drivers in the IR215x family. When designing, keep the high-side bootstrap diode external on the standard S-variant (the IR2153DPbF has the internal diode), select RT and CT to program the frequency per the datasheet curves, and verify deadtime meets the MOSFET turn-off specification. Layout should keep the CT pin trace short to avoid noise injection that can false-trigger shutdown. This page synthesizes distributor pricing for the IR2153SPBF, drop-in same-family alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select, source, and qualify the part quickly.
IR2153STRPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
The Infineon IR2153STRPBF is a self-oscillating 600 V half-bridge gate driver IC with integrated bootstrap functionality, housed in an 8-pin SOIC package. It combines a fixed-frequency oscillator, a programmable deadtime control, and high-side/low-side gate drive channels rated to 600 V. Per the manufacturer datasheet, the device targets driving IGBTs and MOSFETs in offline power conversion topologies such as SMPS ballasts, motor drives, and half-bridge converters. A gate driver IC is a power-management semiconductor that translates low-power logic-level PWM commands from a controller into the high-current, high-voltage signals required to switch the gate of a discrete power MOSFET or IGBT. Half-bridge drivers specifically produce two complementary outputs (high-side and low-side) to drive a totem-pole arrangement of switches, which forms the basic building block of half-bridge, full-bridge, and Class-D switching topologies. The IR2153 sits in the hierarchy: gate driver IC -> half-bridge driver -> bootstrap driver -> high-voltage driver IC -> power management semiconductor. Key features include a 600 V absolute maximum offset voltage on the high-side channel, integrated 15.6 V Vcc zener clamp, micropower startup (typical quiescent current under 100 uA from VCC), programmable oscillator frequency via external RT/CT, and tighter initial deadtime control for symmetric switching. The internal bootstrap MOSFET eliminates an external discrete, simplifying PCB layout. Compared to the older IR2151, the IR2153 adds a shutdown feature (1/6 VCC on CT pin) and increased UVLO hysteresis of 1 V. Technically, the IR2153 uses a high-voltage level-shift circuit to translate the low-side ground-referenced logic into the floating high-side domain. Its deadtime is generated by the CT pin discharge slope and an internal threshold, giving predictable cross-conduction protection. The architecture is bipolar CMOS-DMOS (BCD) and is specified for -40C to +125C operation. For new designs, Infineon recommends the IRS2153D successor. Typical applications include electronic ballasts for fluorescent and HID lamps, half-bridge and push-pull converters, Class-D audio amplifiers, small motor drivers, and any low-to-medium power offline switching supply where a self-oscillating topology eliminates the need for an external controller IC. When designing with the IR2153, ensure the bootstrap capacitor (typically 100 nF to 1 uF ceramic) and supply bypass are placed close to the IC. Verify that the high-side floating supply voltage (VB-VS) stays above the UVLO threshold during the minimum high-side on-time to avoid high-side turn-off. This page synthesizes distributor pricing across 7+ sources, drop-in alternatives in the same 8-SOIC footprint, and practical design notes that supplement the manufacturer datasheet.
IR21814STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR21814STRPBF is a 600V high-voltage half-bridge gate driver IC with independent high-side and low-side referenced output channels, housed in a 14-pin SOIC package. The device delivers 1.9A typical source and 2.3A typical sink peak gate drive currents using proprietary HVIC and latch-immune CMOS technologies that enable ruggedized monolithic construction. It operates with a gate drive supply range from 10V to 20V and features an integrated bootstrap diode and undervoltage lockout for both high-side and low-side channels. A half-bridge gate driver is a power management IC that controls one high-side and one low-side MOSFET or IGBT in a totem-pole configuration, translating low-voltage PWM logic signals into the high-voltage, high-current drive required to switch the power devices efficiently. Within the broader taxonomy, gate drivers sit between microcontrollers/MOSFET gate resistors and the discrete power switches themselves in the signal chain. The half-bridge topology is the foundational building block of DC motor drives, Class D audio amplifiers, and switched-mode power supplies. Key features include 3.3V logic compatibility on inputs, dV/dt immunity, and tolerance to negative transient voltages on the VS pin - critical for motor drive and PFC applications where inductive kickback is common. The deadtime is internally fixed at approximately 500ns, preventing shoot-through between the high-side and low-side outputs. The integrated bootstrap switch simplifies the bill of materials by eliminating the need for an external bootstrap diode in lower-power designs. The IR21814STRPBF utilizes Infineon's high-voltage junction-isolation (HVIC) process combined with CMOS input logic, allowing the high-side channel to level-shift signals up to 600V with minimal propagation delay. Typical propagation delay is around 180ns, with matched channel-to-channel delay to keep timing skew manageable in high-frequency switching designs. The latch-immune CMOS construction ensures stable operation in noisy industrial environments. Typical applications include three-phase motor drive inverters when paired with three IR21814STRPBF devices, Class D audio amplifiers, switching-mode power supplies (SMPS), high-side buck converters, and uninterruptible power supplies (UPS). The 600V rating makes it suitable for 230V/400V AC line rectification-fed bridge circuits. The independent input structure also supports asymmetric drive schemes for synchronous rectifiers. When designing with this part, the bootstrap capacitor value must be sized for the gate charge of the driven MOSFET at the chosen switching frequency. Undervoltage lockout thresholds at approximately 8.2V (rising) and 7.5V (falling) for VCC must be observed to prevent partial enhancement of the power switches during low-voltage transients. This page synthesizes distributor pricing, drop-in alternatives from the Infineon gate-driver family, and practical design notes not found in the standalone manufacturer datasheet.
IR2181SPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR2181SPBF is a high-voltage, high-speed power MOSFET and IGBT half-bridge gate driver with independent high-side and low-side referenced output channels, housed in an 8-pin SOIC (SO-8) package. It delivers typical 1.9 A source and 2.3 A sink gate-drive currents, supports logic-level inputs down to 3.3 V, and operates with a gate-drive supply range of 10 V to 20 V. The driver is fully operational to +600 V on the high-side bootstrap section. A gate driver IC is a power-management component that translates low-current PWM logic signals from a microcontroller or DSP into the high-current gate-drive signals required to switch power MOSFETs or IGBTs. Half-bridge gate drivers specifically drive the high-side and low-side switches of a half-bridge, providing the level-shifting needed to reference the high-side gate to the switching node. Within the broader taxonomy, the IR2181 belongs to gate drivers -> driver ICs -> power management ICs -> semiconductors, and uses Infineon's proprietary HVIC (High-Voltage Integrated Circuit) and latch-immune CMOS technologies for rugged monolithic construction. Key features include dV/dt immunity, undervoltage lockout (UVLO) for both the high-side and low-side channels, a separate logic supply range from 3.3 V to 20 V, and tolerance to negative transient voltages on the high-side return (VS pin). The matched propagation delay between high-side and low-side channels (typically ~140 ns) and the small 8-SOIC footprint make the IR2181SPBF well-suited to compact motor-drive and SMPS designs where board area and switching timing symmetry are critical. The architecture combines a level-shifted high-side channel driven from a bootstrap capacitor with a ground-referenced low-side channel. The high-side channel can float up to 600 V above ground, while the integrated deadtime logic and the matched propagation delays protect against cross-conduction in the half-bridge. This monolithic HVIC construction removes the need for an isolated DC-DC converter for the high-side gate drive, reducing BOM cost and PCB area. Typical applications include three-phase and single-phase motor drives (variable-frequency drives, HVAC compressors, small appliances), switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), half-bridge and full-bridge DC-DC converters, and Class-D audio amplifiers. The 3.3 V logic compatibility allows direct interfacing with low-voltage microcontrollers, removing the need for a logic-level translator. When designing with the IR2181SPBF, observe the bootstrap capacitor selection and refresh requirements for the high-side supply (VB-VS). An undersized bootstrap capacitor causes excessive ripple on VB and may trigger UVLO under high duty cycle or low-frequency operation. Use a low-ESR ceramic bypass capacitor close to the VCC and VB pins to keep the gate-drive rail stable under high peak currents. This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitor lines, and practical design notes not found in the manufacturer datasheet alone.
IR2181STRPBF - 600V Half-Bridge Gate Driver 1.9A/2.3A | Infineon
The Infineon IR2181STRPBF is a 600V half-bridge gate driver IC housed in an 8-pin SOIC (0.154", 3.90mm width) package, providing independent high-side and low-side drive outputs for IGBTs and power MOSFETs in switching converter and motor drive topologies. The device is specified to source 1.9A peak and sink 2.3A peak gate current, supporting switching frequencies suitable for sub-MHz power conversion stages. It is fully operational to +600V and tolerant to negative transient voltage, with integrated dV/dt immunity that prevents false turn-on in noisy switching environments. What is a half-bridge gate driver? A gate driver is a power amplifier that translates low-power logic-level PWM signals from a microcontroller or DSP into the high-current, high-voltage drive required to rapidly switch the gate of a power MOSFET or IGBT. Half-bridge drivers specifically provide two coordinated outputs (high-side floating and low-side referenced) that drive one half of an H-bridge or a single switching leg, enabling efficient synchronous buck, boost, half-bridge, and full-bridge topologies. In the system hierarchy: gate driver -> MOSFET/IGBT driver -> power management IC -> discrete semiconductor. Key features of the IR2181STRPBF include a wide gate drive supply voltage range from 10V to 20V, independent undervoltage lockout (UVLO) for both high-side and low-side channels, and a typical propagation delay of 180ns. Logic inputs are 3.3V and 5V compatible, allowing direct interface with modern microcontrollers, DSPs, and FPGA-based control platforms without level shifters. The non-inverting input configuration simplifies PWM timing alignment in motor control firmware. The architecture uses a high-voltage level-shifting well with proprietary latch-up immunity, allowing the high-side channel to float up to 600V above ground. This monolithic integration eliminates discrete bootstrap components' complexity and enables a single-IC solution for half-bridge power stages from 100W to several kilowatts. Typical applications include driving the primary switching leg in switch-mode power supplies (SMPS), three-phase motor driver inverter stages (used in pairs with a third driver for the low-side IGBTs), Class D audio amplifiers, electronic ballasts for HID lighting, and industrial heating and welding inverters. The wide voltage tolerance also makes it suitable for automotive 12V/24V battery-fed systems and solar micro-inverters. When designing with this device, ensure the bootstrap capacitor on the VBS pin is sized to supply the high-side gate charge plus quiescent current during the on-time. Place a 1uF X7R ceramic bypass on VCC and a 100nF on VBS to decouple the floating supply rail. Avoid exceeding the absolute maximum VBS-VS of 20V and the dV/dt rating specified in the manufacturer datasheet. This page synthesizes distributor pricing across DigiKey, Mouser, and LCSC, drop-in compatible 8-SOIC alternatives, and practical design notes not found in the manufacturer datasheet alone.
IR21834STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR21834STRPBF is a 600V half-bridge gate driver IC with inverting and non-inverting inputs, delivering 1.9A source / 2.3A sink peak drive current in a 14-pin SOIC package. It operates from a gate-drive supply range of 10V to 20V with undervoltage lockout for both high-side and low-side channels, and tolerates negative transient voltages while being dV/dt immune. The driver is fully operational to +600V on the floating high-side channel, allowing direct bootstrap operation in half-bridge and full-bridge power stages. A half-bridge gate driver is a specialized power management IC that sits between a low-voltage control signal (from a microcontroller, DSP, or PWM controller) and the high-power MOSFETs or IGBTs in a switching power stage. It translates logic-level PWM commands into the high-current gate-charge pulses required to switch power semiconductors efficiently, while providing level-shifting isolation between the low-side control ground and the high-side floating supply referenced to the half-bridge switching node. Key features of this part include 3.3V and 5V logic-compatible inputs, matched propagation delay between channels for symmetric PWM timing, and a low-side input that can be configured as either inverting or non-inverting for design flexibility. The 14-SOIC package supports surface-mount assembly and provides adequate thermal performance for typical driver duty cycles where the IC itself dissipates only gate-charge related losses. The IR21834STRPBF uses a proprietary HVIC (high-voltage integrated circuit) process that integrates level-shifting, bootstrap diode functionality for the high-side supply, and robust ESD protection. The floating channel is specifically designed to handle the rapid dV/dt transitions present on the switching node of half-bridge converters without injecting spurious glitches into the gate-drive output. Typical applications include motor drive inverters (BLDC, PMSM, stepper drivers), switched-mode power supplies (SMPS) including half-bridge and full-bridge topologies, induction heating, uninterruptible power supplies (UPS), and DC-DC converters using synchronous rectification. The wide voltage tolerance makes it suitable for both 110/120V and 220/240V mains-powered industrial equipment as well as 400V/800V electric vehicle auxiliary systems. When designing with this part, place the bootstrap capacitor (typically 100nF to 1uF ceramic) close to the VB and VS pins to ensure reliable high-side startup. The VCC decoupling should be a 1uF ceramic in parallel with a larger bulk capacitor to handle the gate-charge current spikes. Verify the bootstrap refresh time under all PWM duty-cycle conditions to prevent the high-side supply from falling below the UVLO threshold. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, helping engineers quickly evaluate the IR21834STRPBF for production designs.
IR2304SPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR2304SPBF is a high-voltage, high-speed power MOSFET and IGBT half-bridge gate driver with independent high-side and low-side referenced output channels, rated for bootstrap operation up to +600 V. Housed in an 8-pin SOIC (SO-8 N) package, the device integrates proprietary HVIC and latch-immune CMOS technologies for ruggedized monolithic construction and supports gate drive supply range of 10 V to 20 V. A gate driver is an integrated circuit that amplifies low-power control signals from a microcontroller or analog controller into the high-current drive required to switch the gate of a power MOSFET or IGBT. Half-bridge drivers specifically control one high-side and one low-side switch in a totem-pole configuration, which is the building block of DC-DC converters, motor drives, and Class D amplifiers. The IR2304SPBF belongs to the gate-driver category within the broader PMIC (Power Management IC) hierarchy, sitting between logic-level controllers and the discrete power switches they command. Key features include 130 mA source/sink gate drive current at the outputs, 220 ns typical propagation delay, matched propagation delay between the two channels for low distortion, and 3.3 V, 5 V, and 15 V input-logic compatibility. Undervoltage lockout (UVLO) is provided for both high-side and low-side channels, and the device is fully operational to +600 V with negative transient voltage tolerance and dV/dt immunity on the high-side reference. The IR2304SPBF architecture uses a level-shifting HVIC to translate the low-side logic input to the floating high-side channel referenced to the switching node. This monolithic construction eliminates the optocoupler or pulse transformer typically required for high-side drive in discrete designs, simplifying PCB layout and reducing BOM cost while improving reliability. Typical applications include low-cost half-bridge and full-bridge DC-DC converters, three-phase motor driver front ends, Class D audio amplifiers, electronic ballasts for HID and fluorescent lighting, and general-purpose gate-drive boards where a single 600 V-tolerant IC replaces discrete drive circuitry. When designing with this driver, ensure the bootstrap diode and capacitor values are sized for the high-side refresh current, which depends on switching frequency and high-side quiescent draw. Place a local ceramic bypass capacitor (typically 1 microfarad X7R) directly across VCC and VSS pins within 5 mm of the package to suppress the switching-current spikes. This page synthesizes distributor pricing as of 2026-09-15, drop-in alternative analysis with parametric proximity scores, and practical design notes that go beyond the manufacturer datasheet to support sourcing and design decisions.
IR2304STRPBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IR2304STRPBF is a 600 V half-bridge gate driver IC designed for driving N-channel power MOSFETs and IGBTs in high-side/low-side configurations, housed in an 8-pin SOIC (SO-8) package. The part delivers typical 0.29 A source and 0.6 A sink output currents, with a 10 V to 20 V supply range, a 600 V offset voltage rating on the high-side channel, and integrated shoot-through protection that prevents simultaneous conduction of the high-side and low-side switches. A non-inverting logic input accepts 3.3 V CMOS or LSTTL signals, simplifying interface with microcontrollers and DSPs. The floating channel tolerates negative transient voltages and is dV/dt immune, enabling robust operation in noisy switching environments. A half-bridge gate driver is a type of gate driver IC specifically designed to control one high-side and one low-side switch in a half-bridge topology used in switch-mode power supplies, motor drives, and Class D amplifiers. As a member of the broader gate driver family (gate driver -> driver IC -> power management IC -> semiconductor), the IR2304 reduces switching losses by providing high peak current to quickly charge and discharge the gate capacitances of large power MOSFETs or IGBTs, which the microcontroller or controller IC cannot drive directly. The integrated deadtime and matched propagation delays further prevent cross-conduction in the half-bridge. Key features include 600 V maximum offset voltage, 220 ns typical turn-on and turn-off propagation delay with matched delay between channels, and built-in deadtime to prevent shoot-through. The output stage uses a high pulse-current buffer designed for minimum driver cross-conduction. The 8-SOIC package supports surface-mount assembly and provides sufficient thermal performance for typical half-bridge applications in industrial and consumer environments. The IR2304 uses a bootstrap-capacitor technique for the high-side supply, allowing the high-side driver to float above the bus voltage while the low-side driver is referenced to ground. This architecture eliminates the need for an isolated DC/DC converter or level shifter in many applications, reducing BOM cost and PCB area. Typical applications include switch-mode power supplies (SMPS), DC-DC converters, motor control drives for HVAC and small appliances, Class D audio amplifiers, and general-purpose half-bridge and full-bridge (using two IR2304s) inverters for industrial automation. The non-inverting single-input control simplifies firmware design, as a single PWM signal controls both outputs with built-in deadtime. When designing with this device, ensure the bootstrap diode is a fast-recovery or ultrafast type rated above 600 V, and that the bootstrap capacitor is sized to supply the high-side gate charge for the switching frequency used. Place a local 0.1 µF VCC bypass capacitor and a 1 µF to 10 µF bulk capacitor as close as possible to the VCC pin to handle the gate charge currents. Avoid exceeding the negative VS transient rating to prevent latch-up of the high-side driver. This page combines distributor pricing, drop-in alternatives, and practical design notes not collected in the manufacturer datasheet.
IR25606STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IR25606STRPBF is a 600V half-bridge gate driver IC housed in an 8-pin SOIC package, featuring integrated shoot-through protection for IGBT and MOSFET half-bridge configurations. The device delivers typical 200 mA source and 350 mA sink gate-drive currents and operates from a 10 V to 20 V VCC supply with logic-level inputs compatible with 3.3 V and 5 V microcontrollers. Its high-voltage level-shift technology tolerates up to 600 V on the high-side bootstrap return, enabling direct drive of N-channel power switches in offline and three-phase inverter topologies. A half-bridge gate driver IC is a specialized power-management semiconductor that controls the high-side and low-side switches in a switching half-bridge. These drivers sit hierarchically between gate drivers, MOSFET/IGBT drivers, power management ICs, and semiconductors, translating low-power PWM logic signals into the high-current gate-drive waveforms required to switch high-voltage power devices efficiently and reliably. Key features include integrated dead-time control that prevents cross-conduction, under-voltage lockout (UVLO) on both VCC and VB supplies, and matched propagation delays that simplify high-frequency PWM operation. The non-inverting input logic and single PWM input minimize firmware overhead. Combined, these features reduce BOM count by replacing discrete bootstrap diode and drive circuits with a single 8-pin IC. The IR25606STRPBF uses Infineon's proprietary HVIC technology with latch-immune CMOS construction, providing ±2 kV HBM ESD tolerance and dV/dt immunity exceeding 50 V/ns. Internal shoot-through protection logic ensures that the high-side and low-side outputs cannot be simultaneously active, preventing catastrophic bridge short-circuits even under fault conditions or noisy input transitions. Typical applications include switched-mode power supplies (SMPS), motor drive inverters for fans and pumps, electronic ballasts for HID and fluorescent lighting, and Class D audio amplifiers. The 600 V rating comfortably covers universal-input PFC front ends and 480 V industrial bus voltages when proper PCB clearance is observed. When designing with this driver, select the bootstrap capacitor to supply at least 10x the gate charge of the high-side MOSFET per switching cycle, and place a 100 V ultrafast diode between VCC and VB to recharge the bootstrap. Always respect the minimum and maximum supply-voltage limits to avoid UVLO misbehavior or HVIC overstress. This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
IR4427PBF - Dual Low-Side Gate Driver, 2.3A/3.3A, 20V, DIP-8 | Infineon
The Infineon IR4427PBF is a dual low-side gate driver IC that delivers 2.3 A source and 3.3 A sink current from an 8-pin PDIP (through-hole) package. Per the Infineon datasheet, it operates from a gate-drive supply of 6 V to 20 V, swings 1.5 A continuous output per channel, and switches in 85 ns (ton) / 65 ns (toff) typical. The IR4427 is part of the IR4426/IR4427/IR4428 family of low-voltage, high-speed power MOSFET and IGBT drivers. A low-side gate driver is a power-management IC that translates low-current logic-level control signals (e.g. 3.3 V or 5 V from a microcontroller or PWM controller) into the high-current gate charge and discharge pulses required to switch a power MOSFET or IGBT. The driver sits between the controller and the power switch's source-referenced gate, providing a low-impedance push-pull output stage capable of sourcing/sinking amperes in tens of nanoseconds. In the broader taxonomy, gate drivers belong to Power Management > Gate/Drivers > MOSFET/IGBT Drivers, sitting between signal-level control logic and the high-power switching stage. Key features of the IR4427PBF include CMOS Schmitt-triggered inputs that are compatible with standard CMOS or LSTTL outputs, matched propagation delay between both channels (ensuring symmetric timing in half-bridge or dual-switch topologies), and a high-pulse-current buffer stage designed for minimum driver cross-conduction. Its non-inverting logic (outputs in phase with inputs) makes it suitable as a direct MOSFET/IGBT gate driver without software inversion. Architecturally, the IR4427 uses proprietary latch-immune CMOS technology for ruggedized monolithic construction, with separate input logic, level-shifting, and high-current output buffer stages on a single die. The matched propagation delay (~85 ns typical) ensures both channels switch within nanoseconds of each other, which is critical for synchronous rectifiers, half-bridges, and Class-D amplifiers where timing mismatch causes shoot-through or distortion. Typical applications include DC-DC converters using synchronous rectifiers, motor drive H-bridge low-side switches, solenoid and relay drivers, electronic ballasts, and Class-D audio amplifier output stages. The 20 V abs-max gate supply makes it compatible with standard 12 V MOSFET gate drive as well as higher-voltage IGBTs. When designing with this part, note that the PDIP-8 package has limited thermal dissipation (~100 C/W theta_JA) and the absolute maximum VCC is 20 V. Decoupling VCC with a 0.1 µF ceramic capacitor placed within 5 mm of the supply pin is essential; high di/dt gate currents create voltage spikes that can trigger latch-up without proper bypassing. This page synthesizes distributor pricing, drop-in pin-compatible alternatives, application circuits, and design considerations not consolidated in the manufacturer datasheet, helping engineers select and qualify the IR4427PBF for new designs or as a second-source on existing layouts.
IRS10752LTRPBF - 100V High-Side Gate Driver 0.24A SOT-23-6
The Infineon IRS10752LTRPBF is a 100V single-channel high-side gate driver IC housed in a 6-lead PG-SOT23 surface-mount package. It delivers typical 0.16A source and 0.24A sink drive currents, with integrated 100V blocking voltage and level-shifting that allows the gate to be tied directly to the drain of the switching transistor. A high-side gate driver is a specialized power-management IC that translates a low-side logic-level PWM signal into a floating high-side drive referenced to the switching node. These drivers sit in the hierarchy: gate driver -> driver IC -> power management IC -> semiconductor. They are essential building blocks in switched-mode power supplies (SMPS), motor drives, and any topology that requires controlling the upper FET of a half-bridge without a bootstrap or isolated supply. Infineon's microHVIC family, of which the IRS10752L is a member, integrates level shifting, a gate drive stage, and protection in a tiny SOT-23-6 package that previously required discrete bootstrap circuits. Key specifications include a 100V maximum offset voltage, 0.16A typical source current and 0.24A typical sink current, VCC range from 10V to 20V, and a propagation delay below 200ns. The non-inverting single-input logic with internal pull-down ensures the FET stays off when the input floats. The SOT-23-6 package offers a low-profile solution for space-constrained designs, and the -TRPBF suffix indicates lead-free (Pb-free) tape-and-reel packaging compliant with RoHS. Architecture-wise, the IRS10752L uses Infineon's proprietary HVIC process that combines a high-voltage level-shift cell with a low-voltage CMOS logic interface and a complementary push-pull output stage. The integrated 100V blocking transistor eliminates the need for external bootstrap diodes in low-side referenced applications, while the matched source/sink impedances minimize shoot-through risk when driving complementary pairs. Typical applications include low-power DC-DC converters, LED drivers, auxiliary supplies in white goods, solenoid and relay drivers, and small motor pre-drivers. The wide 10-20V VCC range supports both 12V bus systems and standard 15V gate drive rails. Designers also use the IRS10752L as a discrete high-side switch or in place of a P-channel MOSFET when a logic-level high-side switch is required. When laying out the IRS10752L, keep the high-voltage loop (VB-VS) area minimal to limit ringing, and place the VCC bypass capacitor within 3mm of the VCC pin. The exposed lead frame pad of the SOT-23-6 should be soldered to a small copper island to provide thermal relief at high switching frequencies. Unlike a bootstrap-based driver, the IRS10752L does not require a refresh pulse below 100% duty cycle, making it suitable for 100% ON applications such as high-side load switches.
IRS2004STRPBF - 200V Half-Bridge Gate Driver SOIC-8 | Infineon
The Infineon IRS2004STRPBF is a 200 V half-bridge gate driver IC with shutdown input, typical 0.29 A source and 0.6 A sink output drive currents, packaged in an 8-Lead SOIC. It is designed to drive N-channel power MOSFETs and IGBTs in half-bridge configurations, with high-voltage floating channel bootstrap operation to +200 V and a logic-compatible input section. The IRS2004 family targets low- to medium-power switching applications where a compact driver replaces discrete high-side drive circuitry. A half-bridge gate driver is a power-management IC that converts low-voltage PWM logic signals into the high-current, level-shifted gate-drive waveforms needed to switch the high-side and low-side MOSFETs/IGBTs of a switching half-bridge. Within the broader taxonomy, it sits inside PMIC (Power Management IC) -> Gate Driver -> Half-Bridge/MOSFET Driver, and the IRS2004 family is part of Infineon's high-voltage HVIC (high-voltage integrated circuit) portfolio, using proprietary latch-immune CMOS and junction-isolation technology to withstand negative Vs transients on the switching node. Key features include a 10 V to 20 V gate-drive supply range, 3.3 V/5 V logic-compatible input, built-in shutdown pin, undervoltage lockout for both channels, matched propagation delay for high-frequency operation, and dV/dt immunity. The 200 V rating covers 120/170 V bus rails typical in small motor drives, DC-DC converters, and lighting ballasts. The driver delivers typical 0.29 A source / 0.6 A sink currents, sufficient for gate charges typical of MOSFETs in the hundreds of nC. The shutdown input allows the host MCU to disable the output stage, enabling fault handling and low-quiescent standby modes. Typical applications include low-power BLDC motor drives for fans and pumps, single-phase and small three-phase inverters, Class-D audio amplifiers, electronic ballasts for HID/LED lighting, and auxiliary SMPS half-bridges. When designing with the IRS2004, the bootstrap diode and capacitor must be sized for the worst-case high-side duty cycle, and the logic ground (VSS) must remain at a stable low-impedance reference distinct from the power-stage return. This page synthesizes distributor pricing, drop-in same-package alternatives, and design notes that complement the manufacturer datasheet for engineers evaluating or sourcing the IRS2004STRPBF.
IRS2005MTRPBF - 200V Half-Bridge Gate Driver | Infineon
The Infineon IRS2005MTRPBF is a 200V half-bridge gate driver IC delivering 0.29A source and 0.6A sink currents, housed in a 14-pin MLPQ (4x4) exposed-pad package. This EiceDRIVER-class high-side and low-side gate driver is engineered for IGBT and MOSFET half-bridge topologies in industrial and consumer motor control, switching power supply, and lighting applications. What is a half-bridge gate driver? A gate driver is a power amplifier that translates low-power control signals from a microcontroller or PWM controller into the high-current, high-voltage drive signals required to switch power transistors (MOSFETs, IGBTs, GaN HEMTs). In the half-bridge topology, two transistors form a series connection between a DC bus and ground, and the gate driver controls both the high-side and low-side transistors with proper dead-time and level shifting. The high-side drive demands a bootstrap supply architecture, and the driver IC handles this internally to provide a floating high-side return. Key features of the IRS2005MTRPBF include VCC and VBS under-voltage lockout (UVLO) for safe startup, a typical 0.29A source current capable of driving small IGBTs and MOSFETs, and 0.6A sink current for fast turn-off. The 200V voltage rating supports 120V AC-rectified bus voltages commonly found in offline motor drives and induction cookers. The non-inverting input logic simplifies microcontroller interface design. Architecturally, the IRS2005MTRPBF integrates a level shifter, bootstrap diode for the high-side supply, gate drive buffers for both outputs, and independent UVLO comparators for VCC (low-side supply) and VBS (high-side bootstrap supply). The exposed thermal pad of the MLPQ-14 package provides a low thermal resistance path to PCB copper. Typical applications include variable-frequency drives (VFD), HVAC motor controllers, industrial fans and pumps, half-bridge and full-bridge converters, electronic ballasts for HID and fluorescent lighting, induction heating, and Class D audio amplifiers. The 200V rating is well matched to 120VAC single-phase rectified buses. When designing with this part, place the bootstrap capacitor (typically 1uF ceramic) close to the VB and VS pins, and ensure the high-side return (VS) is connected directly to the source of the high-side MOSFET. The exposed pad must be soldered to a sufficient copper pour for thermal dissipation, especially at higher switching frequencies. This page synthesizes distributor pricing, drop-in alternatives from Infineon and competitors, and practical design notes for half-bridge gate driver applications not found in the manufacturer datasheet alone.
IRS2005STRPBF - 200V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2005STRPBF is a 200 V high-side and low-side gate driver IC housed in an 8-pin SOIC package, designed using Infineon's proprietary HVIC and latch-immune CMOS technologies. The device integrates independent high-side and low-side output channels capable of sourcing 0.29 A and sinking 0.6 A typical drive currents, making it suitable for driving power MOSFETs and IGBTs in half-bridge configurations. A gate driver IC is a power management semiconductor that translates low-power logic-level PWM signals (typically 3.3 V or 5 V from a microcontroller or DSP) into high-current drive signals capable of rapidly charging and discharging the gate capacitance of a power switch. Within the broader system hierarchy, gate drivers sit between the control IC and the power stage, falling under the category of driver ICs, then power management ICs, then power semiconductors. The IRS2005STRPBF belongs to Infineon's EiceDRIVER family and adds rugged monolithic construction with integrated VCC and VBS undervoltage lockout (UVLO) to ensure safe startup in noisy power environments. Key features include 200 V maximum offset voltage tolerance on the high-side channel, integrated deadtime control, matched propagation delay between channels for low distortion, and logic-level inputs compatible with 3.3 V and 5 V microcontrollers. The 8-SOIC footprint occupies only 3.90 mm of board width, enabling compact motor-drive and SMPS layouts. Logic inputs are Schmitt-triggered to reject noise in industrial environments, and the device operates across the -40 °C to +125 °C industrial temperature range. The IRS2005STRPBF uses a floating high-side channel with a bootstrap capacitor technique, allowing the high-side switch to be driven up to 200 V above the switching node. Internal level shifters translate the low-side logic command across the high-voltage domain without requiring an isolated supply. The monolithic HVIC construction eliminates the optocoupler or pulse transformer typically required for galvanic isolation in half-bridge stages, reducing BOM cost and PCB area. Typical applications include low-power motor drives for BLDC fans and pumps, half-bridge and full-bridge converters in offline SMPS, solar micro-inverters, induction cooker power stages, and Class D audio amplifiers. The wide 200 V rating covers 120 V rectified AC bus voltages with substantial margin. When designing with the IRS2005STRPBF, ensure the bootstrap capacitor (typically 0.1 µF to 1 µF ceramic) is sized to supply the high-side quiescent current plus gate charge during the entire high-side on-time, otherwise high-side UVLO can trip. Keep the LO and HO output traces short and wide to minimize parasitic inductance, which otherwise produces ringing and possible double-pulsing of the driven MOSFETs. This page synthesizes distributor pricing, drop-in same-brand and cross-brand alternatives, and practical bootstrap/PCB layout design notes not consolidated in a single location on the manufacturer datasheet.
IRS2008STRPBF - 200V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2008STRPBF is a 200 V half-bridge gate driver IC with shutdown input and VCC/VBS under-voltage lockout (UVLO), housed in an 8-pin SOIC (SOIC N) surface-mount package and shipped on Tape & Reel. Typical source/sink drive strengths are 0.29 A source and 0.6 A sink, supporting direct gate drive of MOSFETs in low- to mid-power switching stages. The part is qualified for input rail voltages up to 200 V and includes a TTL/CMOS-compatible logic input plus a dedicated shutdown pin for asynchronous turn-off. The non-inverting input stage is intended for use with standard 3.3 V / 5 V microcontrollers and DSPs, and the matching high-side/low-side channel pair drives one half of a full H-bridge topology or two independent N-channel MOSFETs in a synchronous buck/boost converter. A half-bridge gate driver is a power management IC that generates two complementary gate signals referenced to a floating high-side return, allowing a low-side N-channel MOSFET and a high-side N-channel MOSFET to be driven from the same logic signal. In the hierarchy of semiconductor products, it sits under gate drivers -> driver ICs -> power management ICs -> semiconductors. The IRS2008STRPBF belongs to Infineon's EiceDRIVER family of level-shifting gate driver ICs, biased by a single VCC supply and a bootstrap diode/capacitor network that derives the high-side drive rail (VBS). VCC and VBS UVLO guarantee reliable startup by preventing the power MOSFETs from being driven into their linear region when the supply rails are below the gate-threshold-safe voltage window. Key features include 200 V maximum offset voltage tolerance on the high-side channel, matched propagation delay between high-side and low-side outputs to prevent transformer-style DC-bias errors, and a shutdown pin that latches both outputs low to support fault handling and safe board-level sequencing. The 8-pin SOIC package exposes a thermal pad-adjacent die that dissipates gate-charge losses from the driven MOSFETs, and the -STR suffix designates 100% matte-tin lead-free plating compatible with lead-free reflow profiles. Typical applications include appliance motor drives, fan/blower controllers, low-power Class D audio stages, half-bridge DC/DC converters, e-bike controllers, and small industrial inverters. The part is also commonly used to replace discrete bootstrap-driver circuits where PCB area, BOM count, or reliability concerns drive the move to an integrated driver. When designing with the IRS2008STRPBF, observe the VBS bootstrap capacitor value recommended in the datasheet typical application circuit and choose a low-ESR ceramic with at least 50 V rating. Place the bootstrap diode close to the BST and PH pins and minimise the gate-loop area to keep ringing below the MOSFET VGS(max) rating. This page combines distributor pricing tiers, drop-in pin-compatible alternatives and practical design notes not typically found in the manufacturer datasheet, providing a single reference for sourcing and validation decisions.