Power MOSFET Drivers
Products (426)
IRS2011STRPBF - 200V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2011STRPBF is a 200 V high-side and low-side gate driver IC delivering typical 1 A source and 1 A sink currents in an 8-pin SOIC (DSO-8) package for IGBTs and MOSFETs. Per the manufacturer datasheet, it is a high power, high speed power MOSFET and IGBT driver with independent high- and low-side referenced output channels whose logic inputs are compatible with standard CMOS or LSTTL output down to 3.3 V logic. The floating channel is designed for bootstrap operation and is fully operational to +200 V with negative transient voltage tolerance and dV/dt immunity. A half-bridge gate driver IC is a power management semiconductor that translates low-power PWM logic signals from a controller into the high-current, level-shifted drive required to switch the high-side and low-side power switches of a half-bridge or full-bridge stage. In the broader taxonomy it belongs to gate drivers -> MOSFET/IGBT drivers -> power management ICs -> integrated circuits. The IRS2011STRPBF integrates a bootstrap diode and level shifter on chip, allowing a single supply rail to drive both the high-side switch referenced to the switching node and the low-side switch referenced to ground. Key features include 200 V maximum offset voltage on the high-side channel, 1 A typical source and sink drive current, 60 ns typical propagation delay, and 20 ns maximum delay matching between channels for tight dead-time control. The IRS2011STRPBF provides independent CMOS/LSTTL-compatible inputs with hysteresis, a single VCC supply, and built-in shoot-through protection logic that enforces minimum dead time. The device accepts inputs down to 3.3 V, allowing direct connection to modern microcontrollers and DSPs without level shifters. Architecturally, the IRS2011STRPBF uses a high-voltage floating N-channel MOSFET level-shift driver for the high-side output and a ground-referenced push-pull output stage for the low-side. This monolithic approach minimises propagation delay asymmetry - critical for half-bridge switching where channel mismatch translates directly into dead-time error and shoot-through risk. The negative transient voltage tolerance protects against ringing caused by stray inductance when the high-side switch turns off. Typical applications include motor drives, SMPS half-bridge and full-bridge converters, electronic ballasts for HID and fluorescent lighting, and induction heating inverters. For three-phase inverter stages, three IRS2011STRPBF devices drive the six IGBTs of a variable-frequency drive or solar inverter. The wide 200 V rating suits 120/230 V rectified bus designs. When designing with the IRS2011STRPBF, pay particular attention to bootstrap capacitor selection - the capacitor must supply the high-side drive current during the high-side on-time and recharge through the internal bootstrap diode during the low-side on-time. Insufficient capacitance causes high-side UVLO and partial turn-on. This page synthesises distributor pricing, drop-in alternatives, and practical design notes not found in the bare manufacturer datasheet.
IRS20752LTRPBF - 200V High-Side Gate Driver | Infineon
The Infineon IRS20752LTRPBF is a 200 V single high-side gate driver IC with single input, non-inverting logic, and integrated bootstrap diode in a compact 6-lead SOT-23 (PG-SOT23-6) package. It delivers typical 0.16 A source and 0.24 A sink gate-drive currents for IGBTs and power MOSFETs. The wide 10 V to 18 V VBS supply range with absolute VBS tolerance up to 200 V makes it well suited for 100 V / 150 V half-bridge and high-side-only topologies used in motor drives, lighting ballasts, and switched-mode power supplies. A high-side gate driver IC is a specialized low-side gate driver that includes a level-shift stage and a floating bootstrap supply, allowing the gate of a high-side N-channel MOSFET or IGBT to be pulled above the system ground. The high-side driver enables the use of low-RDS(on) N-channel devices on the high side instead of P-channel devices, reducing conduction loss. The IRS20752L belongs to Infineon's microHVIC family of compact, integrated gate-driver ICs. Key features include 200 V absolute maximum offset voltage on the high-side rail, integrated bootstrap diode to reduce external component count, VCC under-voltage lockout for safe start-up, and matched propagation delay between turn-on and turn-off paths to limit duty-cycle distortion. The SOT-23-6 footprint allows the part to drop into layouts designed for the legacy IR2301 / IR2302 pinout family. Architecturally the IRS20752L uses a floating level shifter driving a complementary CMOS output stage capable of sourcing 0.16 A and sinking 0.24 A. The asymmetric source/sink ratio favors faster turn-off to limit switching loss and avoid shoot-through in half-bridge designs. The non-inverting single-input control interface simplifies digital control with microcontrollers or PWM controllers. Typical applications include high-side MOSFET/IGBT switching in 24 V / 48 V motor control, Class-D audio output stages, electronic ballasts for HID and LED drivers, DC-DC buck and synchronous rectifier drive, and general-purpose power-tool drives. The 200 V rating supports 100 V AC offline PFC stages when configured as a high-side-only switch. Design consideration: the bootstrap capacitor must be sized so that the refresh charge per switching cycle (Qbs = Qgate + Ileak*ton) does not drop VBS below the UVLO threshold during worst-case duty cycle and maximum on-time.
IRS2101STRPBF - 600V High/Low-Side Gate Driver IC | Infineon
The Infineon IRS2101STRPBF is a 600 V high-voltage, high-speed power MOSFET and IGBT gate driver with independent high-side and low-side referenced output channels, packaged in an 8-pin SOIC and shipping in Tape & Reel (TRPBF suffix). It delivers typical 0.29 A source and 0.6 A sink gate-drive currents and uses Infineon's proprietary HVIC and latch-immune CMOS technologies for ruggedized monolithic construction. Logic inputs are 3.3 V, 5 V, and 15 V compatible with non-inverting logic, and matched propagation delay keeps both channels in phase. A gate driver IC is a power-management semiconductor that sits between a low-power logic controller (MCU, DSP, FPGA) and a high-power switching transistor (MOSFET, IGBT, GaN). It level-shifts logic-level PWM signals to the much higher gate-drive voltages required to switch the power device efficiently, and provides source/sink current to charge and discharge the gate capacitance quickly. Within the broader IC taxonomy, gate drivers belong to Power Management > Gate Drivers, sitting alongside motor drivers, LED drivers, and voltage supervisors, and they form the critical interface block in every switching power converter, motor drive, and inverter. Key features of the IRS2101STRPBF include: floating channel designed for bootstrap operation, fully operational to +600 V with negative transient voltage tolerance (dV/dt immune), gate drive supply range from 10 V to 20 V, undervoltage lockout (UVLO) for both VCC and VBS rails, and logic operational for VS of -5 V to +600 V with logic state held for VS of -5 V to -VBS. The 8-SOIC footprint with exposed variants is industry standard for half-bridge drivers in the sub-1 A class. Typical applications for the IRS2101STRPBF span motor control (BLDC, PMSM, brushed DC drives), switch-mode power supplies (SMPS) for telecom and industrial DC-DC converters, half-bridge and full-bridge inverters for solar and UPS systems, electronic ballasts and HID lighting drivers, and Class-D audio amplifiers. The 600 V rating covers 110/120/220/230 VAC rectified (up to ~325 VDC bus), while the 0.6 A sink current comfortably drives MOSFETs in the 200-500 nC Qg range at switching frequencies up to several hundred kHz. When designing with this device, always observe the bootstrap capacitor sizing rule (typically ≥1 µF low-ESR ceramic, plus a local diode rated for the bus voltage) and keep the high-side gate loop area minimal to limit parasitic inductance. The shutdown pin (SD) allows fault-input blanking, and designers should consult Infineon Design Tip DT97-3 for negative-VS transient handling details. This page synthesizes distributor pricing, drop-in alternatives from the Infineon IRS2101 family and competing 8-pin SOIC gate drivers, and practical design notes not consolidated in the manufacturer datasheet.
IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IRS2104STRPBF is a 600 V high-voltage, high-speed power MOSFET and IGBT half-bridge gate driver with dependent high-side and low-side referenced output channels, housed in an 8-pin SOIC package. It delivers typical 0.29 A source and 0.6 A sink output currents, supports VCC logic supply of 10 V to 20 V, and operates across a -40C to +150C junction temperature range. The IRS2104 includes a dedicated SD (shutdown) pin and proprietary HVIC plus latch-immune CMOS technologies that enable ruggedized monolithic construction. A half-bridge gate driver is a power-management IC that translates low-voltage PWM control signals into the high-current, floating high-side drive required to switch the upper transistor in a half-bridge or full-bridge power stage. It sits in the broader hierarchy of gate driver IC -> driver -> power management IC -> semiconductor, and is the critical interface between an MCU/controller and the high-voltage switching devices (MOSFETs or IGBTs) used in motor drives, power supplies, and lighting inverters. Key features of the IRS2104STRPBF include typical 150 ns propagation delay, 35 ns rise time, 70 ns fall time, 150 uA quiescent current, and integrated undervoltage protection (UVLO) for both the logic and bootstrap supplies. The high-side channel is built on a proprietary floating bootstrap structure that tolerates VS offsets from -5 V to +600 V, allowing direct drive of the high-side switch in a 400 V or 600 V DC bus without an auxiliary supply. The monolithic HVIC process enables the high-side level-shifter, the low-side driver, the UVLO blocks, and the input logic to coexist on a single die, reducing BOM count and improving reliability versus discrete bootstrap drive circuits. The 8-pin SOIC footprint is industry-standard for half-bridge drivers, simplifying PCB layout and enabling second-source flexibility. Typical applications include low-power motor drives for fans, pumps and small appliances; SMPS half-bridge and full-bridge converters; fluorescent and HID lighting ballasts; Class D audio amplifiers; and any 110/220 VAC-line-rectified half-bridge topology where a single PWM input must switch both the high-side and low-side MOSFETs from a compact 8-pin package. When designing with the IRS2104STRPBF, choose a bootstrap diode with fast recovery and a Vbr of at least 600 V, and a 0.1 uF to 1 uF ceramic bootstrap capacitor sized to refresh the high-side supply within the minimum pulse width. Maintain VS below 600 V and respect the SD pin logic timing to avoid unwanted shutdowns during load transients. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found on the manufacturer datasheet alone, helping engineers select and source the IRS2104STRPBF for new and existing designs.
IRS2106STRPBF - 600V Half-Bridge Gate Driver, 0.6A SOIC-8 | Infineon
The Infineon IRS2106STRPBF is a 600 V high-side and low-side gate driver IC in an 8-pin SOIC package, designed to drive power MOSFETs and IGBTs in half-bridge configurations. According to the manufacturer datasheet, it delivers 0.29 A typical source current and 0.6 A typical sink current per channel with non-inverting logic inputs, a single shutdown pin, and all high-voltage pins rated to 600 V. The IC is a Tape and Reel variant (suffix "STRPBF") of the IRS2106S family originally developed by International Rectifier, now owned by Infineon. A half-bridge gate driver is a specialized power-management IC that translates low-voltage PWM control signals from a microcontroller or analog controller into the high-current, high-voltage drive signals required to switch the high-side and low-side MOSFETs/IGBTs in a half-bridge, full-bridge, or three-phase inverter. In the power-electronics hierarchy, the IRS2106STRPBF sits between the control IC and the discrete switching devices, providing level shifting, bootstrap drive for the high side, and gate-drive strength that controllers alone cannot deliver. Its proprietary HVIC and latch-immune CMOS processes enable monolithic integration of the high-voltage level shifter with low-voltage logic. Key specifications include 600 V maximum offset voltage on the high-side channel, 10 V to 20 V gate-drive supply (VCC), up to 25 V VBS bootstrap supply, 200 ns typical turn-on/off propagation delay, and 50 ns built-in deadtime matching between the two channels. The SD (shutdown) input disables both outputs simultaneously, providing a clean way to implement fault protection. Under-voltage lockout (UVLO) on both VCC and VBS prevents the power switches from being driven into their linear region during low-supply conditions, a frequent cause of MOSFET/IGBT thermal failures. The IRS2106STRPBF is intended for motor drives, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, DC-DC converters, and class-D audio amplifiers. Its 600 V rating covers 110/120/220/230 V AC rectified rails (up to about 400 V DC bus) and 400 V class industrial motor-drive buses. The 0.6 A sink current is sufficient for MOSFETs in the low-to-mid current range; higher-power IGBTs may require an external buffer such as the IR2128 or IXDN609. When designing with the IRS2106STRPBF, the bootstrap diode and capacitor form the high-side supply and must be sized for the worst-case PWM duty cycle; a slow reverse-recovery diode or undersized capacitor causes high-side UVLO and shoot-through. Place the bootstrap capacitor as close to pins VBS and VS as possible. The SD pin should be pulled high during normal operation; an RC delay of a few microseconds on SD provides clean power-on behavior. This page consolidates distributor pricing, package-aware drop-in alternatives, and PCB layout considerations that are not all present in the datasheet application diagram.
IRS21091STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS21091STRPBF is a 600V half-bridge gate driver IC with shutdown and programmable deadtime, packaged in an 8-pin SOIC (0.154", 3.90mm width). It features typical 0.29 A source and 0.6 A sink gate-drive currents and is designed to drive IGBTs and N-channel MOSFETs in high-side and low-side configurations. According to the manufacturer datasheet, the floating channel is fully operational to +600V and is tolerant to negative transient voltages with dV/dt immunity, while the gate drive supply range is 10 V to 20 V. A half-bridge gate driver is a type of power-management IC that sits between a low-voltage control signal (typically from a microcontroller or PWM controller) and the gate of a high-voltage power switch. The high-side output uses a bootstrap capacitor technique to generate a floating supply above the bus voltage, which is necessary to turn on an N-channel MOSFET or IGBT in the upper leg of the half-bridge. Half-bridge drivers belong to the broader family of gate drivers, which in turn sit within the power management IC hierarchy. Key features of the IRS21091STRPBF include a 600V floating channel, typical 290 mA source / 600 mA sink gate-drive current, a low 750 ns propagation delay, a logic input compatible with standard CMOS or LSTTL outputs down to 3.3 V logic, an integrated shutdown pin, and user-programmable deadtime to prevent shoot-through. The matched propagation delays between the two channels keep PWM duty-cycle distortion low. The output drivers use a high-pulse-current buffer stage designed to minimize driver cross-conduction. Architecturally, the part uses Infineon's high-voltage BCDMOS process. A level-shifter couples the low-voltage logic input to the high-side floating channel, while the bootstrap diode (or external bootstrap diode) charges the bootstrap capacitor off the VCC rail on every low-side cycle. The integrated deadtime control lets designers trade margin against switching loss without an external timing network. Typical applications include motor drives, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), half-bridge and full-bridge converters, and any high-voltage synchronous-rectification topology where IGBT or MOSFET gates must be driven above the bus rail. Designers choose this part when they need 600V tolerance in a compact 8-SOIC, with logic-level inputs that can be driven directly from a 3.3 V MCU. A primary design tip: the bootstrap capacitor value is critical. Too small a capacitor causes the high-side UVLO to trip under load; too large slows startup. A 0.1 uF to 1 uF X7R ceramic is typical, sized using the Qg of the driven MOSFET, the switching frequency, and the gate charge per cycle. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRS2109STRPBF - 600V Half-Bridge Gate Driver SOIC-8 | Infineon
The Infineon IRS2109STRPBF is a 600 V half-bridge gate driver IC with typical 0.29 A source and 0.6 A sink output currents, packaged in an 8-lead SOIC. It is designed to drive power MOSFETs and IGBTs in half-bridge and full-bridge power topologies operating up to 600 V, with a floating channel that tolerates negative transient voltages on the high-side rail. A gate driver (also called a MOSFET driver or IGBT driver) is a power amplifier that sits between a low-power control signal (typically 3.3 V or 5 V logic from a microcontroller or PWM controller) and the gate of a high-power switching transistor. Because the gate of a power MOSFET or IGBT presents a large capacitive load (often several nanofarads), the control signal alone cannot switch the device fast enough. Gate drivers like the IRS2109STRPBF sit in the broader taxonomy: gate driver -> driver IC -> power management IC -> semiconductor. They provide the level-shifting, peak current, and isolation required to switch the transistor cleanly at high frequencies, reducing switching losses and improving overall power-conversion efficiency. Key features of the IRS2109STRPBF include 540 ns typical propagation delay, fixed internal deadtime of 540 ns to prevent shoot-through in half-bridge configurations, soft turn-on to reduce EMI, a single PWM input, and integrated bootstrap diode support for the high-side supply. The wide VCC supply range (10 V to 20 V) allows it to drive both standard and logic-level MOSFETs. The floating channel is fully operational to +600 V, with transient tolerance to negative voltages on the switch node. Architecturally, the IRS2109STRPBF uses a level-shifted high-side driver and a low-side driver referenced to VCC, with built-in deadtime generation to ensure the high-side and low-side outputs cannot be on simultaneously. The proprietary HVIC (High-Voltage IC) process allows monolithic integration of the level-shifter with the gate driver output stage. The soft turn-on feature (controlled output dV/dt) reduces EMI and ringing when the power stage switches, which simplifies PCB layout and EMI filtering. Typical applications include motor drives (BLDC, PMSM, induction motor variable-frequency drives), switch-mode power supplies (SMPS), half-bridge and full-bridge DC-DC converters, HID lighting ballasts, and D-class audio amplifiers. The part is commonly used in industrial motion control, solar inverters, induction cooking, and uninterruptible power supplies (UPS). When designing with this part, the bootstrap capacitor must be sized to hold VBS above the UVLO threshold during the high-side on-time, and a local bypass capacitor should be placed directly on the VCC and VBS pins. The fixed 540 ns deadtime limits the maximum practical switching frequency to about 1 MHz and should be considered when targeting very-high-frequency designs. This page synthesizes distributor pricing, drop-in alternatives, application guidance, and practical design notes not found in the manufacturer datasheet alone.
IRS2110SPBF - 500V High/Low Side 2.5A Gate Driver SOIC-16
The Infineon (formerly International Rectifier) IRS2110SPBF is a 500 V half-bridge gate driver IC delivering 2.5 A peak source/sink output current in a 16-pin SOIC package with independent high-side and low-side referenced output channels. Built on proprietary HVIC and latch-immune CMOS technology, it provides monolithic rugged construction for driving power MOSFETs and IGBTs in switching converter topologies. A gate driver IC is an interface device between low-power control logic (such as a microcontroller PWM output or analog controller) and the high-power gate of a switching transistor. It supplies the high transient current required to charge and discharge the gate capacitance quickly, reducing switching losses, and provides level-shifting so a low-voltage control signal can drive a high-side switch referenced to the switching node. Gate drivers belong to the broader category of power management ICs, sitting between signal-level controllers and the discrete power stage. Key features of the IRS2110SPBF include fully operational bootstrap operation to +500 V, 120 ns propagation delay (typical), undervoltage lockout for both VCC and VBS supplies, and TTL/CMOS compatible logic inputs with hysteresis. The driver accepts a logic supply (VCC) of 10 V to 20 V and a floating supply up to 500 V offset, supporting high-side N-channel MOSFET or IGBT switching in bridge configurations. The IRS2110SPBF uses a level-shifted high-side channel with a floating bootstrap supply that allows the high-side gate drive to track the switching node voltage up to 500 V. The monolithic HVIC construction eliminates optocoupler or pulse-transformer isolation in the drive path, shrinking BOM count and improving noise immunity. Undervoltage lockout on both VCC and VBS prevents driving the power stage with insufficient gate voltage, which would otherwise cause high R_DS(on) losses. Typical applications include motor drive inverters, switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), solar inverters, and half-bridge/full-bridge DC-DC converters. The 500 V rating suits 230 VAC offline rectifier-fed systems where 400 V bus rails are common. When designing with this device, the bootstrap capacitor must be sized to deliver the gate charge of the high-side FET plus enough hold-up time at the lowest PWM duty cycle. A 0.1 uF to 1 uF ceramic bypass on VCC/VBS is mandatory. Do not exceed the absolute maximum VBS of 25 V and do not let the high-side float for extended periods without refresh pulses. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
IRS2110STRPBF - 500V High/Low-Side Gate Driver | Infineon
The Infineon IRS2110STRPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver with independent high-side and low-side referenced output channels, delivering 2.5 A source and 2.5 A sink typical gate-drive current in a 16-pin SOIC Wide-Body (SOIC-WB) package. The device features a 500 V offset voltage rating, an integrated bootstrap diode, and a shutdown input, and operates from a gate-drive supply range of 10 V to 20 V. A half-bridge gate driver is a power-management IC that translates low-power PWM signals from a controller into the high-current, high-voltage drive required to switch the gate of a high-side or low-side power MOSFET or IGBT in a half-bridge or full-bridge power stage. Within the system hierarchy, this function sits between the digital control IC and the power switches, forming part of the broader gate-driver class, which itself belongs to the power-management integrated circuit family used in switch-mode power supplies, motor drives, and lighting ballasts. Key features of the IRS2110STRPBF include a 500 V maximum offset voltage, 2.5 A typical source and sink gate-drive current, a 30 ns typical propagation delay for ton/toff, an integrated bootstrap diode that eliminates an external discrete part, and an active-low shutdown input that forces both outputs low. The SOIC-16 Wide-Body package offers a large die-attach paddle, supporting reliable thermal performance at switching frequencies above 100 kHz. Proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction that is tolerant to negative transient voltages and dV/dt noise on the switching node. The high-side channel is implemented as a floating bootstrap structure, so it can operate up to 500 V above the low-side return, making the part suitable for offline and motor-drive applications where the switching node swings between the rectified mains and ground. Typical applications include three-phase motor drives for industrial pumps and fans, half-bridge and full-bridge converters for switch-mode power supplies, electronic ballasts for fluorescent and HID lighting, and solenoid or actuator drivers in 12 V to 400 V automotive and industrial systems. The wide VCC range also supports battery-powered 48 V to 400 V bus architectures. When designing with this part, place the bootstrap capacitor (typically 0.1 µF to 1 µF low-ESR ceramic) close to the VB and VS pins, and ensure the high-side return (VS) is connected to the source of the high-side switch. A VCC bypass of at least 0.1 µF plus a 1 µF bulk is recommended to suppress switching noise. This page synthesizes distributor pricing, drop-in half-bridge driver alternatives, and practical HVIC layout notes not found in the manufacturer datasheet alone.
IRS2112STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2112STRPBF is a 600 V half-bridge gate driver IC with shutdown input, delivering typical 0.29 A source and 0.6 A sink currents in a 16-pin SOIC wide-body package. Designed for IGBT and MOSFET half-bridge topologies, it combines a floating high-side driver and a ground-referenced low-side driver on a single die, with gate drive supply range from 10 V to 20 V and logic supply range from 3.3 V to 20 V. A half-bridge gate driver IC is a type of power management semiconductor that translates low-power PWM control signals from a microcontroller or DSP into high-current drive signals capable of switching the gates of two stacked power switches (high-side and low-side). It sits hierarchically between the control IC and the power stage in motor drives, DC-DC converters, and class-D audio amplifiers, where it provides level shifting, bootstrap support, and undervoltage protection. Key features include fully operational +600 V floating channel, dV/dt immunity, tolerance to negative transient voltages on the high-side, separate logic and gate-drive grounds, undervoltage lockout for both channels, 3.3 V logic compatibility, and a dedicated shutdown pin for fast protection turn-off. The wide-body SOIC-16 footprint offers an exposed thermal path suitable for moderate switching frequencies up to several hundred kHz. The IRS2112STRPBF uses a proprietary HVIC and latch-immune CMOS process that delivers matched propagation delays between the high-side and low-side channels, preventing cross-conduction in the half-bridge. The floating channel uses a bootstrap capacitor to develop the high-side supply, simplifying the drive circuitry and reducing BOM cost compared to isolated gate-drive solutions. Typical applications include permanent-magnet synchronous motor (PMSM) drives, three-phase inverter stages, half-bridge and full-bridge DC-DC converters, induction-heating converters, and class-D audio amplifiers. The 600 V rating comfortably supports 400 V rectified-mains systems with adequate derating. When designing with this device, choose the bootstrap capacitor value carefully: C_Boot >= Q_gate / (V_CC - V_F - V_GS(min)) where Q_gate is the total gate charge of the high-side MOSFET/IGBT. The shutdown pin can be wire-OR'd with the fault output of a comparator for hardware-level overcurrent protection. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical bootstrap design notes not found in the standalone datasheet, giving engineers a faster path to a working half-bridge prototype.
IRS21271STRPBF - 600V High-Side Gate Driver IC | Infineon
The Infineon IRS21271STRPBF is a 600 V single-channel high-side gate driver IC with integrated over-current sensing and fault reporting, housed in an 8-lead SOIC (surface-mount) package. It delivers a typical 0.29 A source and 0.6 A sink gate-drive current, an automotive-grade gate drive range of 9 V to 20 V, and logic inputs that are CMOS/LSTTL-compatible down to 3.3 V. According to Infineon's product page, this IC is engineered for switching IGBTs and MOSFETs in high-voltage half-bridge and high-side configurations. What is a high-side gate driver? A high-side gate driver is a power-management IC that level-shifts a low-voltage logic command (typically 3.3 V or 5 V from a microcontroller) up to the floating source connection of a high-side switch (such as the upper MOSFET in a half-bridge). Without a high-side driver, a controller cannot reliably turn on a switch whose source is floating on top of the bus voltage. High-side drivers sit inside the broader gate-driver hierarchy: gate driver -> half-bridge driver -> motor/power driver -> power management IC, and they are essential building blocks in motor drives, solar inverters, industrial SMPS, and automotive powertrain electronics. Key features of the IRS21271STRPBF include integrated current-sense comparator input, dedicated FAULT output pin for hardware protection, dV/dt noise immunity, tolerance to negative transient voltages on the VS pin, and compatibility with bootstrap supply generation for the floating high-side rail. The 8-SOIC package is JEDEC-standard and supports automated SMT assembly lines. Technically, the IRS21271STRPBF uses Infineon's proprietary HVIC (high-voltage integrated circuit) process combined with latch-immune CMOS, allowing the high-side channel to float up to 600 V continuously while the low-voltage logic stays referenced to ground. The internal current-sense comparator allows direct shunt-resistor monitoring without an external op-amp, which simplifies PCB layout and reduces BOM cost. Typical applications include automotive 12 V and 24 V motor drives, HVAC blower and pump controls, e-bike and e-scooter inverter stages, solenoid and relay drivers, and small appliance BLDC/PMSM motor control. The over-current fault output is especially useful in safety-critical automotive subsystems. When designing with this device, always include a bootstrap diode and capacitor on VB and VS to refresh the floating supply each switching cycle. Size the bootstrap capacitor to deliver at least 10x the total gate charge of the driven MOSFET/IGBT to keep VBS above the UVLO threshold. Use a low-ESR ceramic bypass cap on VCC and place the current-sense filter RC network within 5 mm of the CS pin to avoid false tripping.
IRS2127STRPBF - 600V High-Side Gate Driver IC | Infineon
The Infineon IRS2127STRPBF is a 600 V single high-side gate driver IC with over-current protection and fault reporting, delivering typical 0.29 A source and 0.6 A sink currents in an 8-lead SOIC package for IGBTs and MOSFETs. It operates with a gate drive supply range of 12 V to 20 V for motor drive applications and supports non-inverting input logic with an integrated current-sense comparator. A high-side gate driver IC is a specialized power management device that level-shifts a low-voltage logic input (typically 3.3 V or 5 V) up to the much higher floating rail needed to drive the upper switch in a half-bridge or high-side switching topology. It sits within the power management IC hierarchy (gate driver -> driver IC -> power management IC -> semiconductor), and is essential when a low-voltage MCU cannot directly drive a high-side power switch referenced to the switching node. Key features include a 600 V absolute maximum offset voltage allowing bootstrap operation to -9 V on the VS pin, undervoltage lockout (UVLO) for safe bootstrap startup, and a dedicated FAULT output for cycle-by-cycle over-current shutdown. The IRS2127 integrates a current-sense comparator with an external resistor-programmable threshold, eliminating the need for a separate protection IC and shortening fault response time to under 1 us. The device also features dV/dt immunity and is tolerant to negative transient voltages on the VS node. The IRS2127STRPBF uses a high-voltage level-shift architecture with integrated charge-pump biasing and CMOS input logic compatible with 3.3 V and 5 V microcontrollers. The bootstrap supply is generated externally by a single bootstrap diode and capacitor, keeping the IC compact while supporting switching frequencies above 100 kHz in motor drive and SMPS topologies. Typical applications include variable-frequency motor drives, industrial inverters, switched-mode power supplies (SMPS), and any high-side switch where cycle-by-cycle over-current protection is required. For automotive applications requiring 9 V to 20 V gate drive, the IRS21271STRPBF is the pin-compatible drop-in variant. Designers should use a fast-recovery bootstrap diode and a low-ESR bootstrap capacitor (1 uF X7R minimum) sized for the worst-case duty cycle and switching frequency. Place the sense resistor in the source return path and decouple VCC with a local 1 uF ceramic capacitor to keep the FAULT output immune to switching noise.
IRS2153DPBF - 600V Self-Osc Half-Bridge Driver | Infineon
The Infineon IRS2153DPBF is a 600V self-oscillating half-bridge gate driver IC with integrated bootstrap FET, programmable switching frequency and programmable shutdown, housed in an 8-pin PDIP through-hole package. It delivers typical 0.18 A source and 0.26 A sink gate-drive currents from a 0.5 us (typ) internal oscillator, with a 1.1 us (typ) half-bridge driver stage. The IRS2153D is the second-generation silicon implementation of the legacy IR2153, qualified to the industrial level and traceable to MSL2 / MSL3 packaging lines. A half-bridge gate driver is a power-management building block that produces two complementary gate-drive outputs from a single supply rail to switch the high-side and low-side MOSFETs (or IGBTs) of a half-bridge. The high-side stage uses a bootstrap capacitor refreshed through an internal bootstrap FET, eliminating the need for a separate isolated supply. In the broader hierarchy, this IC sits between low-side gate drivers and full H-bridge/three-phase driver ICs, inside the power management IC category. Key features include 600V maximum offset voltage tolerance on the high-side floating rail, 0.5 us internal oscillator dead-time control, programmable switching frequency via a single RT/CT resistor/capacitor pair, and a shutdown input that latches the outputs low. The integrated bootstrap FET eliminates an external discrete component and simplifies PCB layout. Typical quiescent current VCC supply current is 0.5 mA (typ), and the device operates across an industrial -40C to +125C junction temperature range. The IRS2153D family is widely used in energy-efficient lighting and motor control. Typical applications include fluorescent electronic ballasts, HID ballasts, LED driver stages, half-bridge DC-DC converters, low-power motor drives and general-purpose switch-mode power supplies. The self-oscillating topology eliminates the need for an external PWM controller, enabling compact, low-BOM-count designs.
IRS2153DSPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
The Infineon IRS2153DSPBF is a 600V self-oscillating half-bridge gate driver IC in an 8-pin SOIC package with an integrated oscillator built around a CMOS 555-style front end. It delivers high-side and low-side gate drive for N-channel MOSFETs or IGBTs in a half-bridge configuration with logic-level input, programmable deadtime via a single external timing resistor and capacitor, and a high-voltage level shifter tolerant of up to 600V bus rails. A gate driver IC (also called a half-bridge driver) is a power-management semiconductor that translates low-power PWM logic signals from a controller into the high-current, high-voltage drive required to switch the gates of MOSFETs or IGBTs in switch-mode power supplies, motor drives, and lighting ballasts. The self-oscillating variant integrates the timing network, removing the need for an external oscillator and simplifying ballast and driver designs. Key features include a 600V maximum offset voltage, 130 mA / 270 mA typical source/sink gate-drive current, internal deadtime of approximately 1.2 us, low quiescent current, and HVIC + latch-immune CMOS construction for rugged monolithic integration. The IRS2153DSPBF accepts a 10V to 20V VCC supply and includes undervoltage lockout on VCC, with bootstrap capability for the high-side supply. The IRS2153DSPBF architecture uses a high-voltage level-shifter and latch-immune CMOS logic to drive the high-side channel referenced to the half-bridge switching node (VS). This allows direct connection of the low-side gate return to the system ground while the high-side channel floats with the switching node, eliminating the need for an isolated drive supply in many topologies. Typical applications include electronic ballast for fluorescent and HID lamps, half-bridge converters, motor driver front ends, and switch-mode power supply drivers. Its self-oscillating nature makes it well suited for cost-sensitive lamp ballast designs where external PWM control is unnecessary. The wide VCC range supports both 12V and 15V system rails commonly found in lighting and industrial subsystems. When designing with this device, ensure the bootstrap capacitor and diode are correctly sized for the high-side supply, paying attention to refresh pulses during low-side turn-on. The timing resistor (RT) and capacitor (CT) selected on pin 2 set the oscillator frequency - typical fluorescent ballast designs operate in the 30-50 kHz range with appropriate deadtime margins.
IRS2153DSTRPBF - 600V Self-Oscillating Half-Bridge Driver | Infineon
The Infineon IRS2153DSTRPBF is a 600 V self-oscillating half-bridge gate driver IC with an integrated front-end oscillator, integrated bootstrap FET, programmable frequency, and programmable shutdown, housed in an 8-pin SOIC package. It delivers typical 0.18 A source and 0.26 A sink output currents, a 1.1 us typical internal propagation delay, and operates from a 10 V to 20 V (VDD) supply with a 600 V high-side floating supply absolute maximum rating. A gate driver IC is a power-management semiconductor that sits between a low-voltage control signal (from a microcontroller, PFC controller, or analog timer) and the gate of a high-voltage power switch such as a MOSFET or IGBT. In the broader IC taxonomy, the IRS2153DSTRPBF belongs to: gate driver -> driver IC -> power management IC -> semiconductor. Its half-bridge topology drives the high-side and low-side switches of a switching power stage from a single low-voltage supply using a bootstrap capacitor to generate the floating high-side rail. Key differentiating features include HVIC (high-voltage integrated circuit) and latch-immune CMOS technologies that enable rugged monolithic construction, an internal oscillator similar to the industry-standard CMOS 555 timer, and a built-in shutdown pin that allows external control of the switching frequency or disables the outputs. The internal bootstrap FET eliminates the need for an external bootstrap diode in many designs, simplifying PCB layout and reducing BOM count. Architecturally, the IRS2153DSTRPBF combines a precision current source that charges the external RT/CT timing components, a Schmitt-trigger comparator that sets the oscillator threshold, level-shift logic that translates the LO and HO gate signals across the high-voltage isolation barrier, and matched push-pull output buffers sized for driving typical 600 V/600 V-class MOSFETs and IGBTs in switching frequencies between a few kHz and several hundred kHz. Typical applications include self-oscillating electronic ballasts for fluorescent and HID lamps, switch-mode power supplies (SMPS) using half-bridge or push-pull topologies, induction-heating cooktops, low-cost DC-AC inverters, and high-voltage synchronous-rectified converters where a self-contained timing source replaces an external PWM controller. In each case the part replaces a discrete oscillator + half-bridge driver pair with a single 8-pin device. When designing with the IRS2153DSTRPBF, select RT and CT to program the switching frequency per the datasheet's timing equations, ensure the bootstrap capacitor value is sized for the operating frequency and duty cycle, and place CT close to the CT pin to minimize noise pickup. The shutdown pin (SD) can be tied to VCC through a resistor divider for under-voltage lockout (UVLO) or driven directly from a logic signal for synchronous shutdown.
IRS21814MTRPBF - 600V Half-Bridge Gate Driver 1.9A/2.3A | Infineon
The Infineon IRS21814MTRPBF is a high-voltage, high-speed power MOSFET and IGBT gate driver with independent high-side and low-side referenced output channels, packaged in a 16-pin MLPQ 4x4 (4x4 mm) exposed-pad package. It delivers typical source/sink currents of 1.9 A and 2.3 A respectively, supports bootstrap operation up to +600 V, and operates from a 10 V to 20 V gate-drive supply with 3.3 V/5 V logic-compatible inputs. Typical propagation delay is 180 ns with matched channel-to-channel timing. A gate driver IC is a power-management device that sits between a low-power control signal (from a microcontroller or PWM controller) and a high-power switching transistor (MOSFET or IGBT). The driver's job is to translate the weak logic-level command into a strong, fast, properly leveled gate-source voltage swing that can rapidly charge and discharge the gate capacitance of the power switch. The IRS21814MTRPBF belongs to the half-bridge driver category - a sub-family of gate-driver ICs that contains both a high-side and a low-side channel on one die, enabling direct drive of one phase leg of a bridge converter without external level-shift circuitry. Key features of this driver include: floating channel designed for bootstrap operation, fully operational to +600 V with tolerance to negative transient voltages (dV/dt immune), undervoltage lockout (UVLO) on both VCC and VBS rails, matched propagation delay between high-side and low-side channels to minimize dead-time distortion, and a 3.3 V/5 V input-logic interface that connects directly to microcontrollers and DSPs. The exposed thermal pad on the bottom of the MLPQ package reduces junction-to-PCB thermal resistance for improved switching losses. Architecturally, the IRS21814MTRPBF uses Infineon's proprietary HVIC and latch-immune CMOS process, allowing the high-side output stage to float up to 600 V above the low-side return while remaining galvanically isolated through level-shifters internal to the die. The output buffer is designed for minimum driver cross-conduction, preventing shoot-through currents in the driven half-bridge. The dead-time and timing are externally controlled by the user's PWM generator. Typical applications include motor drives (BLDC/PMSM), solar inverters, switched-mode power supplies (SMPS), induction-heating converters, and Class D audio amplifiers. The 600 V rating makes it well-suited for offline (mains-rectified) systems up to 230 V AC without requiring additional high-side isolation components. When designing with this part, select a bootstrap diode with fast reverse recovery and a low-leakage blocking diode rated for the high-side rail voltage. Place the VCC bypass capacitor (typically 0.1 uF + 10 uF ceramic) and the VBS bootstrap capacitor (typically 0.1 uF + 1 uF ceramic) as close as possible to their respective pins to minimize switching-noise-induced UVLO events. This page synthesizes distributor pricing as of 2026-09-15, drop-in MLPQ-16 alternatives, and practical design notes that go beyond the manufacturer datasheet's typical-application schematic.
IRS2181STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2181STRPBF is a high-voltage, high-speed power MOSFET and IGBT half-bridge gate driver IC with independent high-side and low-side referenced output channels, housed in an 8-pin SOIC package with tape-and-reel packaging. It delivers typical source/sink current capability of 1.9 A/2.3 A and is rated for an offset voltage of up to 600 V, enabling direct drive of the upper MOSFET/IGBT in half-bridge and full-bridge power topologies without a separate high-side bootstrap signal isolator. The device operates from a VCC supply of 10 V to 20 V and uses Infineon's proprietary HVIC and latch-immune CMOS technology for ruggedized monolithic construction. A gate driver IC such as the IRS2181STRPBF belongs to the power-management semiconductor family, specifically the high-side/low-side (HS/LS) driver subcategory. In a switched-mode power architecture, the gate driver sits between a low-power control IC (microcontroller, DSP, or analog controller) and the high-power switching devices (MOSFETs or IGBTs). Its function is to translate low-current logic-level PWM signals into high-current drive signals capable of rapidly charging and discharging the gate capacitance of power transistors, which keeps switching losses low and prevents shoot-through. The IRS2181 family uses a bootstrap capacitor on the VB pin to derive the floating supply for the high-side channel, eliminating the need for an isolated DC/DC converter in many motor-drive and inverter applications. Key features of the IRS2181STRPBF include a wide VCC range of 10 V to 20 V, 600 V absolute maximum offset voltage, 1.9 A typical source / 2.3 A typical sink output drive current, under-voltage lockout (UVLO) for both VCC and VBS rails, matched propagation delay between channels, and logic inputs that are 3.3 V compatible. A shutdown pin (SD) is provided, and the logic polarity is non-inverting on both high-side and low-side outputs, which simplifies firmware and timing design. The 8-pin SOIC package offers a small footprint that is compatible with standard reflow profiles and is suitable for high-density PCB layouts. Architecturally, the IRS2181 combines a floating high-side well capable of withstanding 600 V transient swings, a low-side driver referenced to VCC/GND, and a CMOS input stage with internal pull-downs. The high-side channel includes its own level shifter that translates the low-side HIN PWM signal up to the floating VB supply. A built-in dead-time control is not present; the IRS2181 relies on the controller to insert dead time externally, which gives designers flexibility in tuning switching behavior. The latch-immune CMOS process minimizes dv/dt-induced false triggering that historically plagued discrete bootstrap driver designs. Typical applications include variable-frequency motor drives for HVAC and small appliances, low-power DC/AC solar micro-inverters, switch-mode power supplies (SMPS) with synchronous rectification, electronic ballasts for HID and fluorescent lighting, induction-heating cooktops, and class-D audio amplifiers. The device is also widely used in three-phase inverter modules for BLDC and PMSM motors when paired with three IRS2181 devices (one per phase) plus a controller such as the IRMCF143 or a TI C2000 MCU. In each case, the IRS2181STRPBF's 600 V rating comfortably covers 230 VAC rectified (≈325 V) and 120 VAC rectified (≈170 V) bus rails with substantial safety margin. A primary design consideration is the bootstrap capacitor sizing: CB must hold VBS above the UVLO threshold for the longest high-side on-time. A conservative formula uses CB ≥ QG(MAX)/ΔVBS, with a safety factor of 2x to 5x. For a 100 nC gate charge and 200 mV allowable droop, CB ≥ 0.5 µF; designers often select 1 µF to 4.7 µF X7R ceramics. The bootstrap diode must be a fast-recovery type (≤100 ns trr) rated for the full DC bus voltage. This page synthesizes distributor pricing, drop-in SOIC-8 alternatives from the same IRS2181/IRS2184 family and competing half-bridge drivers, and practical bootstrap design guidance not collected in any single manufacturer datasheet.
IRS21834STRPBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IRS21834STRPBF is a 600 V half-bridge gate driver IC for power MOSFETs and IGBTs, delivering typical 1.9 A source and 2.3 A sink output currents in a 14-pin SOIC package. It features floating channel bootstrap architecture rated to +600 V, gate drive supply range of 10 V to 20 V, and inverting/non-inverting logic inputs with shutdown capability. Key features include fully operational +600 V floating channel, negative transient voltage tolerance with dV/dt immunity, undervoltage lockout (UVLO) for both VCC and VBS rails, and matched propagation delay for high-frequency switching. The proprietary HVIC and latch-immune CMOS technologies enable ruggedized monolithic construction with built-in deadtime control logic. The IRS21834STRPBF utilizes Infineon's high-voltage integrated circuit technology combining an input logic stage, level-shifting circuitry, and complementary output buffers. The floating high-side channel is bootstrapped via an external diode and capacitor network, allowing operation with bus voltages up to 600 V. The matched propagation delay between high-side and low-side channels (typically 200 ns with ±50 ns matching) reduces deadtime requirements and improves efficiency in synchronous rectifier and motor drive topologies. Typical applications include motor control inverters for HVAC and appliance drives, switch-mode power supplies (SMPS) with half-bridge and full-bridge topologies, induction heating, UPS systems, and class-D audio amplifiers. The 14-SOIC package provides a compact footprint for high-density power modules while maintaining sufficient creepage for 600 V systems. When designing with this driver, ensure the bootstrap capacitor is sized for at least 10 uF with low ESR to supply the high-side gate charge during switching cycles. The shutdown pin allows PWM-controlled fault protection by gating both outputs simultaneously, useful for overcurrent detection circuits.
IRS2184SPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2184SPBF is a 600V half-bridge gate driver IC with dependent high-side and low-side referenced output channels, delivering 1.9A source and 2.3A sink peak gate drive current in an 8-pin SOIC package. It uses proprietary HVIC and latch-immune CMOS technologies for ruggedized monolithic construction, with logic inputs compatible with standard CMOS or LSTTL outputs down to 3.3V logic levels. A gate driver IC is a power-management semiconductor that translates low-power PWM control signals from a microcontroller or controller IC into the high-current drive required to switch power MOSFET or IGBT gates. Within the broader taxonomy, gate drivers sit between the controller (DSP/MCU) and the power stage in switched-mode power conversion, motor drives, and lighting ballast topologies. The IRS2184SPBF specifically implements a half-bridge configuration where one high-side and one low-side switch are driven with a fixed deadtime inserted by the external bootstrap circuit and IN pin logic. Key features include a 600V absolute maximum offset voltage allowing the high-side channel to drive the upper switch in a bus up to 600V, typical 1.9A source / 2.3A sink output current, matched propagation delays for both channels, under-voltage lockout (UVLO) for both VCC and VBS rails, and 3.3V/5V input logic compatibility. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The device architecture combines a level-shift high-voltage stage for the high-side channel with a ground-referenced low-side channel. The high-side uses a bootstrap capacitor (VBS) charged through an external diode when the low-side FET is on, which provides the floating supply needed to drive the high-side gate above the bus voltage. The proprietary HVIC technology integrates 600V level-shift transistors on the same silicon as the low-voltage CMOS logic, eliminating optocoupler or pulse-transformer isolation in the gate-drive path. Typical applications include motor control inverters for permanent-magnet synchronous and brushless DC motors, switch-mode power supply half-bridge and full-bridge converters, electronic ballasts for fluorescent and HID lighting, induction heating, and class-D audio amplifiers. The 8-SOIC footprint and wide logic compatibility make it well-suited to compact industrial inverter designs up to several hundred watts. When designing with the IRS2184SPBF, the bootstrap diode and capacitor must be sized for the worst-case refresh interval determined by the high-side on-time and quiescent current to VBS. A 0.1uF to 1uF ceramic bypass on VCC close to the IC is mandatory to handle the high di/dt of the gate charge transfer events. This page synthesizes Infineon distributor pricing, parametric drop-in alternatives sourced from cross-reference databases, and practical half-bridge design notes that go beyond the bare datasheet application circuit.
IRS2184STRPBF - 600V Half-Bridge Gate Driver, SOIC-8 | Infineon
The Infineon IRS2184STRPBF is a 600V half-bridge gate driver IC in a non-inverting configuration, housed in an 8-pin SOIC package with tape-and-reel packaging (Pb-free). Designed using Infineon's proprietary HVIC and latch-immune CMOS technology, it provides high-voltage, high-speed power MOSFET and IGBT drive capability with dependent high-side and low-side referenced output channels. A gate driver is a power-management IC that sits between a low-power controller (microcontroller, DSP, or logic output) and a high-power switching device (MOSFET or IGBT). It translates low-current logic-level signals into high-current gate drive signals capable of rapidly charging and discharging the gate capacitance of power switches. Gate drivers belong to the broader hierarchy of power management ICs and are essential in switch-mode power supplies (SMPS), motor drives, and DC-DC converters where the control circuit must remain electrically isolated from the high-voltage switching node. Key features include a 600V maximum offset voltage rating allowing operation in 120V/240V AC-derived bus systems, 1.4A typical source/sink output drive current for fast switching transitions, and 3.3V logic-compatible inputs accepting standard CMOS or LSTTL outputs. The IRS2184 also integrates built-in deadtime (typically 400ns) to prevent shoot-through in half-bridge configurations. The 8-pin SOIC package is industry-standard and supports surface-mount assembly. The IRS2184 uses a level-shifting circuit on the high-side channel that references the floating supply to the switching node (VS pin), enabling bootstrap operation from a single low-voltage supply. The low-side channel is referenced to ground (COM pin). This architecture eliminates the need for an isolated gate drive supply on the high side, reducing BOM cost and PCB area. Typical applications include switch-mode power supplies (SMPS), uninterruptible power supplies (UPS), motor control inverters for small BLDC and PMSM motors, electronic ballasts for lighting, Class D audio amplifiers, and any half-bridge or full-bridge topology driving MOSFETs or IGBTs up to 600V bus voltage. The IRS2184 is specifically the non-inverting variant of the IRS2184 family (input high = HO high, LO high). When designing with this driver, ensure the bootstrap capacitor is sized to supply the high-side gate charge for the worst-case switching frequency and duty cycle. A 100nF to 1uF ceramic capacitor with a low-ESR bootstrap diode is recommended. Place the driver as close as possible to the MOSFETs to minimize gate-loop inductance and prevent dv/dt-induced ringing.
IRS21867STRPBF - 600V 4A Hi/Lo Side Gate Driver SOIC-8 | Infineon
The Infineon IRS21867STRPBF is a 600 V high-side and low-side gate driver IC for IGBTs and MOSFETs with typical 4 A source and 4 A sink output currents, packaged in an 8-pin SOIC (SO-8). It accepts 3.3 V and 5 V logic-level CMOS or TTL inputs on HIN and LIN, with built-in deadtime and matched propagation delays optimized for half-bridge power stages. A gate driver IC is a specialized power management interface that translates low-current logic signals (from a microcontroller, DSP, or analog controller) into the high-current gate drive required to switch power semiconductors such as IGBTs and MOSFETs. In the broader hierarchy, gate drivers sit between low-voltage control logic and high-voltage power switches; they are members of the power management IC family (subcategory: MOSFET/IGBT drivers). Floating-channel high-side drive, typically achieved with a bootstrap capacitor, allows the same low-voltage supply to drive a high-side switch referenced to a switching node that swings up to 600 V above ground. Key features include a 600 V absolute maximum offset voltage on the high-side channel, 4 A source / 4 A sink peak gate drive current, 22 ns typical rise time and 18 ns typical fall time into a 1 nF load, and a wide VCC operating range of 10 V to 20 V. Undervoltage lockout (UVLO) for both VCC and VBS protects the power stage from insufficient gate drive, and the monolithic HVIC + latch-immune CMOS construction provides high transient immunity on the high-side channel. The IRS21867S family uses a proprietary HVIC process that integrates a level-shifter, gate driver buffer, and protection logic on a single die. The input logic block is compatible with 3.3 V microcontrollers without external level translation, reducing BOM cost in digital-controlled power converters. The matched propagation delays on the high-side and low-side channels minimize deadtime distortion in half-bridge topologies, directly improving efficiency and reducing shoot-through risk. Typical applications include motor drive inverters for small industrial pumps and fans, half-bridge and full-bridge DC-DC converters, solar microinverters, induction-heating power stages, and Class-D audio amplifiers. The 4 A peak drive strength is well matched to medium-power IGBTs and high-current MOSFETs commonly found in sub-1 kW converter designs. When designing with this part, use a low-ESR bootstrap diode (UF4007 or schottky) and a 1 µF or larger ceramic bootstrap capacitor to keep VBS above the UVLO threshold during high-side ON intervals. The 8-SOIC package has limited thermal dissipation; at switching frequencies above 50 kHz with continuous high-side switching, the exposed-pad version (IRS21867S) or the larger SOIC-14 IRS2184 family is recommended for headroom. This page synthesizes distributor pricing, drop-in same-brand alternatives (IRS21867SPBF, IRS21867STRPBF-Q1), and practical bootstrap design notes that complement the manufacturer datasheet.
IRS2302SPBF - 600V Half-Bridge Gate Driver | Infineon
The Infineon IRS2302SPBF is a 600 V half-bridge gate driver IC for power MOSFETs and IGBTs, delivering 200 mA source / 350 mA sink peak output current in an 8-pin SOIC (SOIC-8N) package with independent high-side and low-side referenced output channels. It operates from a 5 V to 20 V gate-drive supply (VCC) and tolerates floating high-side offsets up to +600 V, making it suitable for directly driving the upper switch in a half-bridge leg without an additional level shifter. What is a half-bridge gate driver? A half-bridge gate driver is an integrated circuit that translates low-voltage logic-level PWM signals from a microcontroller or DSP into the high-current, level-shifted gate-drive signals required to switch the high-side and low-side power transistors in a half-bridge topology. These drivers sit within the broader gate-driver IC family, which in turn belongs to power management semiconductors. They are essential building blocks in motor drives, switch-mode power supplies, and DC-AC inverters, where they provide logic-to-power isolation, level shifting, and timing/shoot-through protection between the controller and the switching power stage. Key features of the IRS2302SPBF include a typical propagation delay of 220 ns (some sources quote 200 ns), matched high-side/low-side delay paths, built-in dead-time control logic, and under-voltage lockout (UVLO) protection for both the VCC and VS (high-side floating supply) rails. The HVIC and latch-immune CMOS process enables monolithic construction that is dV/dt immune and tolerant to negative transient voltages on the VS node, eliminating the need for external protection diodes on the bootstrap rail in most applications. Architecturally, the IRS2302SPBF uses a bootstrap-capacitor technique for the high-side channel: a small external diode and capacitor generate a floating supply referenced to the switching node (VS), allowing the high-side output to swing with the half-bridge midpoint. This technique is widely used in sub-1 kW motor drive and SMPS designs because it requires only a single low-voltage supply rail. Compared with gate-drive transformers, the bootstrap approach is simpler and cheaper but limits the high-side on-time to the recharge period of the bootstrap capacitor. Typical applications include three-phase and single-phase motor drives (variable-frequency drives, fan and pump controllers), uninterruptible power supplies (UPS), solar micro-inverters, induction-heating inverter stages, and half-bridge or push-pull switched-mode power converters. The 600 V floating channel makes it well-suited to 230 V and 380 V AC-line applications when paired with appropriately rated MOSFETs or 600 V-class IGBTs. When designing with the IRS2302SPBF, choose the bootstrap capacitor to maintain VS above the UVLO threshold during the worst-case high-side on-time, and verify that the bootstrap diode reverse-voltage rating exceeds the maximum DC bus voltage. A small gate-source resistor (10-47 ohm) on each power switch is recommended to control ringing and EMI without excessively slowing switching edges. The logic inputs are CMOS-compatible, allowing direct connection to a 3.3 V or 5 V microcontroller without level-shifters. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers shorten evaluation cycles and select verified second-source parts for risk-managed production.
IRS2302STRPBF - 600V Half-Bridge Gate Driver | Infineon | SOIC-8
The Infineon IRS2302STRPBF is a 600 V half-bridge gate driver IC with integrated shutdown, delivering 0.2 A source and 0.35 A sink drive currents from an 8-pin SOIC (SOIC-8N) package. It operates from a VCC supply of 5 V to 20 V and drives the high-side and low-side of a half bridge configured from IGBTs or power MOSFETs. The floating high-side channel is designed for bootstrap operation, fully operational to +600 V with negative transient voltage tolerance and dV/dt immunity. According to Infineon's datasheet, propagation delays are typically 220 ns with matched channel-to-channel timing for symmetric switching. A half-bridge gate driver IC is a type of high-voltage level shifter and gate driver used in power electronics to control a pair of switches arranged in a totem-pole or half-bridge configuration. The device translates low-voltage PWM logic signals (3.3 V / 5 V) from a microcontroller or DSP into the high-voltage gate-drive signals required to switch the high-side power switch whose source/drain swings with the phase node. The driver belongs to the broader family of gate driver ICs, which sits within the power management semiconductor hierarchy: gate driver -> high-voltage half-bridge driver -> driver IC -> power management IC -> semiconductor. Key features include 3.3 V, 5 V, and 15 V logic-compatible inputs, undervoltage lockout (UVLO) for both VCC and VBS rails, cross-conduction prevention logic with built-in dead time, and a dedicated shutdown pin for fast protection response. The IRS2302STRPBF additionally provides soft turn-on, an external programmable dead-time architecture, and matched propagation delays to minimize duty-cycle distortion at high PWM frequencies. The 8-SOIC package is industry standard for this voltage class and is compatible with most half-bridge layouts designed around IR (now Infineon) driver generations. Architecturally the IRS2302STRPBF uses a level-shifted high-side channel with a floating well that tolerates the rapid dV/dt transients present on the phase node of a switching half-bridge, plus a ground-referenced low-side channel that shares VCC. The 0.2 A/0.35 A asymmetric source/sink ratings compensate for typical MOSFET gate-charge asymmetry and avoid shoot-through by ensuring that turn-off (sink) is faster than turn-on (source). The shutdown input overrides the logic inputs and forces both gate outputs low, providing a hardware path for fault propagation from an upstream comparator or DESAT detector. Typical applications include motor drive inverters for BLDC and PMSM motors, uninterruptible power supplies (UPS), switch-mode power supplies (SMPS) with half-bridge or active-clamp topologies, induction heating inverters, solar micro-inverters, and Class D audio amplifiers. The 600 V rating comfortably supports 230 V AC or 380 V DC bus designs when properly derated. When designing with the IRS2302STRPBF, choose a bootstrap diode with fast recovery and a low forward drop, and size the bootstrap capacitor to supply the high-side gate charge with no more than ~10% droop. Place the VCC and VBS bypass capacitors as close as possible to pins 1 and 8 respectively to suppress ringing. For noise immunity, route the shutdown line away from the switching node and add a small RC filter if long traces are unavoidable.
IRS2308SPBF - 600V Half-Bridge Gate Driver IC | Infineon
The Infineon IRS2308SPBF is a 600V high-voltage, high-speed power MOSFET and IGBT gate driver with dependent high and low side referenced output channels, housed in an 8-pin SOIC (SO-8) package. The IRS2308SPBF delivers 600 mA peak source/sink output current on both channels and supports a logic supply (VCC) range of 10V to 20V, with a logic input threshold compatible with standard CMOS or LSTTL outputs down to 3.3V logic. A gate driver IC is a specialized high-current buffer stage that sits between a low-power control signal (such as a microcontroller PWM output) and the gate of a power switching device. By providing level shifting, voltage translation, and high-current drive capability, gate drivers overcome the limitations of directly driving MOSFETs or IGBTs from logic-level outputs. The IRS2308SPBF belongs to the half-bridge gate driver category within the broader power management semiconductor family, designed specifically for driving N-channel MOSFETs or IGBTs in a half-bridge (or per-phase) configuration. Key features include an integrated bootstrap diode for the high-side supply, 540 ns typical propagation delay, deadtime control to prevent shoot-through, and matched propagation delays between channels. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 V, making it well-suited for offline motor drive and SMPS applications. The architecture combines a level-shifted high-side channel with a ground-referenced low-side channel, both driven from a single PWM input (HIN/LIN). An integrated deadtime generation circuit prevents simultaneous turn-on of both outputs. The bootstrap technique supplies the high-side driver from a charge-pump diode and capacitor referenced to the switch node, eliminating the need for an isolated DC/DC converter. Typical applications include three-phase motor drives, DC/AC inverters, half-bridge and full-bridge SMPS topologies, motor control in industrial automation, and Class D audio amplifiers. The wide 600V blocking voltage supports universal input PFC front ends and 380-480V industrial bus systems. When designing with the IRS2308SPBF, ensure adequate VCC bypass capacitance (typically 0.1uF ceramic in parallel with an electrolytic) placed close to the VCC and COM pins. The bootstrap capacitor value must be sized to maintain VBS above the UVLO threshold under worst-case duty cycle and switching frequency conditions. This page synthesizes distributor pricing from DigiKey, Mouser, and Arrow, drop-in compatible alternatives in the SOIC-8 footprint, and practical design notes not consolidated in the manufacturer datasheet.