EL7104 - 1A High-Speed MOSFET Gate Driver | Renesas
MPN: EL7104 β Active| Qty | Unit Price | Extended |
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| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
EL7104 Overview
A power MOSFET driver is a buffer IC that translates logic-level control signals into the high-current, fast-edged gate drive waveforms required to rapidly charge and discharge the gate capacitance of power MOSFETs. Within the power-management IC hierarchy, gate drivers sit between low-voltage PWM controllers or logic devices and the power switch itself, and the EL7104 also serves as a high-speed clock/capacitive-load driver, improving on the industry-standard TC-4420/29 driver family.
Key features include 1 A peak output current for fast switching of large MOSFETs or capacitive loads, very high speed propagation achieved through a proprietary Turbo-Driver circuit that accelerates the input stages by tapping the wider voltage swing at the output stage, and a supply-voltage range extending to 16.5 V. Because the output is non-inverting, it can directly replace non-inverting members of the TC-4420 family in many layouts.
The Turbo-Driver architecture is a CMOS-based design that achieves a roughly 10-fold reduction in supply current compared with older bipolar drivers, yet without the delay-time problems commonly associated with CMOS drivers. This combination of low quiescent consumption and low, matched propagation delay makes the part well suited to driving loads at elevated switching frequencies with predictable timing.
Typical applications include low-side MOSFET gate driving in DC-DC converters and motor control circuits, high-speed clock or capacitive-load driving, and level-shifted gate drive stages in industrial power supplies. The 1 A peak capability allows fast gate transitions that reduce switching losses in the driven MOSFET.
A key design consideration is supply decoupling: because 1 A peak currents are delivered in nanosecond-scale pulses, a low-ESR ceramic capacitor must be placed directly across the V+ and GND pins to prevent supply dip and unwanted ringing at the output.
This page synthesizes the manufacturer datasheet data, distributor listing information, and drop-in replacement analysis not found in any single source, including pricing context and alternatives comparison.
Drop-in alternatives for EL7104 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
TC4420CPA
β Drop-Inπ Reference alternative (not in catalog)
TC4429CPA
β Drop-Inπ Reference alternative (not in catalog)
EL7104 Maximum Ratings & Electrical Characteristics
| Output Configuration | Non-Inverting, Single Channel |
| Peak Output Current | 1 A |
| Maximum Supply Voltage (V+) | 16.5 V |
| Operating Temperature Range | -40C to +85C |
| Driver Type | Low-Side Gate Driver / High-Speed Clock Driver |
| Technology | CMOS Turbo-Driver |
| Compatible With | Improves industry-standard TC-4420/29 clock drivers |
| Supply Current Advantage | ~10x lower supply current vs bipolar drivers |
| Packages Available | 8-pin SOIC and 8-pin PDIP |
| Mounting Type | Through Hole (PDIP) / Surface Mount (SOIC) |
| Datasheet Document | 7-page manufacturer datasheet |
EL7104 8-pin soic and 8-pin pdip Pin Configuration Guide
Pin configuration for EL7104 (8-pin soic and 8-pin pdip package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for EL7104.
Refer to the datasheet for full pin configuration.
Typical Applications
EL7104 is suitable for 6 applications: Low-Side MOSFET Gate Drive in DC-DC Converters, High-Speed Clock and Capacitive Load Driving, Motor Control Gate Drive Stages, Level-Shifting and Pulse Amplification in Industrial Systems, Switch-Mode Power Supply Synchronous Rectification Drive, Test and Measurement Instrumentation Drivers.
Low-Side MOSFET Gate Drive in DC-DC Converters
The EL7104's 1 A peak output current and Turbo-Driver fast input stages make it a strong fit for low-side gate driving in non-isolated DC-DC converters, where rapid gate charge/discharge directly reduces switching losses in the power MOSFET. Its CMOS architecture draws roughly 10x less supply current than bipolar drivers of the TC-4420 class, improving converter light-load efficiency. Placed between the PWM controller output and the MOSFET gate, with a low-ESR ceramic decoupling capacitor directly across the 16.5 V-max V+ and GND pins, it delivers nanosecond-scale edges into gate capacitances of standard and logic-level FETs. The non-inverting output preserves controller polarity without logic inversion.
Recommended
High-Speed Clock and Capacitive Load Driving
Renesas explicitly positions the EL7104 as an improved high-speed clock driver for the TC-4420/29 class, and its ability to source and sink 1 A peak into highly capacitive loads makes it ideal for driving long PCB clock traces, CCD clock lines, and heavily loaded distribution nets. The Turbo-Driver circuit speeds up the input stages by tapping the wider voltage swing at the output stage, yielding low propagation delay without the delay-time variability typical of CMOS drivers. In clock distribution, the -40C to +85C industrial rating and matched rise/fall behavior maintain timing integrity across environmental conditions, while the low supply current keeps quiescent board power low in multi-driver systems.
Recommended
Motor Control Gate Drive Stages
In small brushed and brushless DC motor drives, the EL7104 serves as a low-side gate driver that switches power MOSFETs at PWM frequencies where gate-drive speed determines efficiency and thermal performance. The 1 A peak capability charges typical small and medium power MOSFET gates fast enough to keep transition losses low at PWM rates in the tens of kilohertz, and the non-inverting logic interface connects directly to microcontroller PWM outputs operating from 5 V logic. Its wide 16.5 V supply ceiling permits gate-drive amplitude sufficient for standard-threshold MOSFETs, and the PDIP package simplifies prototyping of motor-control breadboards before SOIC production release.
Recommended
Level-Shifting and Pulse Amplification in Industrial Systems
Industrial control boards frequently need to amplify weak logic pulses to higher swing, higher current signals capable of driving relays-optocoupler inputs, capacitive sensors, or power transistor gates. The EL7104 performs this level-and-power amplification from a supply up to 16.5 V with fast, consistent edges, and its CMOS supply current roughly 10x below bipolar alternatives suits densely populated industrial I/O cards with many driver channels. The 8-pin PDIP (EL7104CNZ) supports hand replacement during system bring-up and field service, while the SO version supports automated assembly. The -40C to +85C range matches industrial ambient specifications without derating.
Recommended
Switch-Mode Power Supply Synchronous Rectification Drive
For synchronous rectification stages in switch-mode power supplies, gate-drive quality determines both conversion efficiency and EMI. The EL7104 drives low-side synchronous MOSFETs with 1 A peak current, producing the fast, symmetrical edges needed to minimize body-diode conduction intervals. Its Turbo-Driver input architecture provides low propagation delay that helps controller dead-time budgets stay tight, while the low CMOS supply current reduces housekeeping losses at light load - a documented advantage of roughly 10x versus bipolar TC-4420-class drivers. Decoupling the V+ pin with low-ESR ceramics close to the package prevents ground bounce during the 1 A transient events.
Recommended
Test and Measurement Instrumentation Drivers
Bench instruments, function generators, and automated test equipment need clean, fast pulses into variable and often purely capacitive loads. The EL7104's specification of 1 A peak into highly capacitive loads, its very high speed Turbo-Driver input stages, and its up-to-16.5 V output swing make it a practical pulse-amplifier building block for such equipment. Timing consistency - without the delay-time problems the datasheet associates with ordinary CMOS drivers - supports accurate pulse-width reproduction, and the industrial temperature range suits rack-mounted instruments. The 8-pin PDIP variant (EL7104CNZ) is convenient for instrument prototyping and socketed service replacement.
Recommended
Recommended Products Summary
Engineering reference data for EL7104 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | TC4420CPA | TC4429CPA |
|---|---|---|---|
| Package | 8-PDIP / 8-SOIC | 8-PDIP | 8-PDIP |
| Brand | Renesas Electronics | Microchip Technology | Microchip Technology |
| Output Polarity | Non-Inverting | Non-Inverting | Inverting |
| Peak Output Current | 1 A | 6 A | 6 A |
| High-Speed Turbo-Driver Architecture | Yes (proprietary) | No | No |
Key Differentiators
- Proprietary Turbo-Driver speed advantage (vs TC4420CPA)
- CMOS-class supply current (vs TC4420CPA)
- Honest trade-off: lower peak drive current (vs TC4420CPA)
Design Notes
Because the EL7104 delivers 1 A peak currents in fast transient pulses, decouple the V+ pin with a low-ESR/low-ESL ceramic capacitor (typically 0.1 uF in parallel with a bulk 1-10 uF; sizes per your design) placed as close as possible between V+ and GND. Long, inductive supply traces cause supply dip during output transitions, which appears as output ringing and can re-trigger adjacent logic. Keep the gate-drive loop (driver output -> MOSFET gate -> source return) short and wide.
Do not exceed the 16.5 V maximum supply voltage; exceeding it risks permanent damage to the output stage. When substituting a TC4420-family part for the EL7104, remember the TC4429 variant is INVERTING - substituting it directly will invert your PWM polarity and can cause shoot-through in half-bridge circuits. Also verify that the replacement's higher drive current does not overstress a gate resistor or EMI filter sized for the EL7104's slower edges.
Estimated: gate-drive losses in the driver are approximately Qg x Vdrv x fsw per MOSFET driven (e.g., a 30 nC gate charge at 12 V and 200 kHz gives about 0.072 W of gate-drive related power in the circuit path). The 8-pin PDIP package has limited thermal capability, so for high switching frequencies or multiple loads, verify junction temperature using the datasheet theta-JA with your PCB's copper area and airflow conditions.
Compliance Information
Compliance status not stated in the provided verified web data; confirm on the Renesas product page or distributor environmental data before design-in.
