1EBN1001AEXUMA1 vs 1ED3142MC12HXUMA1 Comparison
Detailed side-by-side comparison of 1EBN1001AEXUMA1 by Infineon and 1ED3142MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
1EBN1001AEXUMA1 ✓ ActiveInfineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ ActiveSpecification Comparison
| Parameter | 1EBN1001AEXUMA1 | 1ED3142MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Product Type | Isolated single-channel IGBT/MOSFET gate driver booster | — |
| Series | EiceDRIVER™ Boost (1EBN family) | — |
| Configuration | High-Side / Low-Side (non-inverting booster) | Inverting, Non-Inverting |
| Number of Outputs | 2 (separate source and sink paths) | 2 (separate source/sink) |
| Peak Output Current | ±15 A | — |
| Number of Drivers | 1 | — |
| Input Signal | ASC input, active-clamping disable | — |
| Active Clamping | Yes (very fast reaction time) | — |
| Package | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) | PG-DSO-8 (PG-LDSO-8-1) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | -40 °C to +125 °C (automotive grade) | — |
| Automotive Qualification | AEC-Q100 qualified | — |
| MSL Level | [DATA_NEEDED: MSL level] | — |
| RoHS Status | Compliant | — |
| Target Switching Stage | Motor drives > 10 kW (up to 400 A modules) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | 1ED3142MC12HXUMA1 |
| Product Family | — | EiceDRIVER X3 Compact |
| Driver Type | — | Isolated single-channel gate driver |
| Isolation Technology | — | Coreless transformer (galvanic) |
| Isolation Voltage | — | 3000 Vrms |
| Number of Channels | — | 1 |
| Source Drive Current | — | 6 A |
| Sink Drive Current | — | 6.5 A |
| Maximum Rise Time | — | 20 ns |
| Maximum Fall Time | — | 20 ns |
| Propagation Delay (typ.) | — | 40 ns |
| Supported Switches | — | IGBT, MOSFET, SiC MOSFET |
| EU RoHS | — | Compliant |
| Part Status | — | Active |
| ECCN | — | EAR99 |