1EBN1001AEXUMA1 vs 1ED3142MC12HXUMA1 Vergleich
Detaillierter Direktvergleich von 1EBN1001AEXUMA1 von Infineon und 1ED3142MC12HXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
1EBN1001AEXUMA1 - 15A Isolated Gate Driver Booster | Infineon EiceDRIVER™
1EBN1001AEXUMA1 ✓ AktivInfineon
1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
1ED3142MC12HXUMA1 ✓ AktivSpezifikationsvergleich
| Parameter | 1EBN1001AEXUMA1 | 1ED3142MC12HXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $4,41 | $1,32 |
| Product Type | Isolated single-channel IGBT/MOSFET gate driver booster | — |
| Series | EiceDRIVER™ Boost (1EBN family) | — |
| Configuration | High-Side / Low-Side (non-inverting booster) | Inverting, Non-Inverting |
| Anzahl der Ausgänge | 2 (separate source and sink paths) | 2 (separate source/sink) |
| Peak Output Current | ±15 A | — |
| Number of Drivers | 1 | — |
| Input Signal | ASC input, active-clamping disable | — |
| Active Clamping | Yes (very fast reaction time) | — |
| Gehäuse | PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) | PG-DSO-8 (PG-LDSO-8-1) |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | -40 °C to +125 °C (automotive grade) | — |
| Automotive Qualification | AEC-Q100 qualified | — |
| MSL-Level | [DATA_NEEDED: MSL level] | — |
| RoHS-Status | Compliant | — |
| Target Switching Stage | Motor drives > 10 kW (up to 400 A modules) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | 1ED3142MC12HXUMA1 |
| Product Family | — | EiceDRIVER X3 Compact |
| Driver Type | — | Isolated single-channel gate driver |
| Isolation Technology | — | Coreless transformer (galvanic) |
| Isolation Voltage | — | 3000 Vrms |
| Number of Channels | — | 1 |
| Source Drive Current | — | 6 A |
| Sink Drive Current | — | 6.5 A |
| Maximum Rise Time | — | 20 ns |
| Maximum Fall Time | — | 20 ns |
| Propagation Delay (typ.) | — | 40 ns |
| Supported Switches | — | IGBT, MOSFET, SiC MOSFET |
| EU RoHS | — | Compliant |
| Part Status | — | Active |
| ECCN | — | EAR99 |