1ED3142MC12HXUMA1 - 6A Isolated Gate Driver | Infineon EiceDRIVER
MPN: 1ED3142MC12HXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.45 | $24.50 |
| 100 | $1.98 | $198.00 |
| 500 | $1.72 | $860.00 |
| 1,000 | $1.48 | $1,480.00 |
| 3,000 | $1.32 | $3,960.00 |
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View Datasheet →1ED3142MC12HXUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Part Number | 1ED3142MC12HXUMA1 |
| Product Family | EiceDRIVER X3 Compact |
| Driver Type | Isolated single-channel gate driver |
| Isolation Technology | Coreless transformer (galvanic) |
| Isolation Voltage | 3000 Vrms |
| Number of Channels | 1 |
| Number of Outputs | 2 (separate source/sink) |
| Configuration | Inverting, Non-Inverting |
| Source Drive Current | 6 A |
| Sink Drive Current | 6.5 A |
| Maximum Rise Time | 20 ns |
| Maximum Fall Time | 20 ns |
| Propagation Delay (typ.) | 40 ns |
| Supported Switches | IGBT, MOSFET, SiC MOSFET |
| Package | PG-DSO-8 (PG-LDSO-8-1) |
| Mounting Type | Surface Mount |
| EU RoHS | Compliant |
| Part Status | Active |
| ECCN | EAR99 |
1ED3142MC12HXUMA1 Pin Configuration
| Pin 1 | VCC1 — Primary-side (low-voltage) supply, 3.1 V to 5.5 V |
| Pin 2 | GND1 — Primary-side ground, reference for control logic |
| Pin 3 | IN+ — Non-inverting PWM input from MCU/FPGA |
| Pin 4 | IN- — Inverting PWM input (optional) |
| Pin 5 | GND2 — Secondary-side ground reference for the driven switch |
| Pin 6 | VCC2 — Secondary-side (gate-drive) supply, UVLO-referenced |
| Pin 7 | OUT_L — Gate-drive sink output (pull-down) |
| Pin 8 | OUT — Gate-drive source output (pull-up) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1ED3142MC12HXUMA1 is suitable for 6 applications: Industrial Servo Drives, Photovoltaic String Inverters, On-Board EV Chargers (OBC), Telecom Rectifier Modules, Industrial Welding Power Supplies, Solar Microinverters and Power Optimizers.
Industrial Servo Drives
The 1ED3142MC12HXUMA1 fits servo drives because its 6 A source / 6.5 A sink drive current and 40 ns typical propagation delay satisfy the switching demands of 600 V/1200 V IGBT half-bridges used in three-phase inverters. The 3000 Vrms coreless-transformer isolation meets IEC 61800-5-1 reinforced-insulation requirements, while high CMTI rejects the fast dv/dt events from IGBT turn-off. Placed between the control MCU and the IGBT module, the part sequences gate charge and discharge through 5-10 Ω gate resistors, reducing switching losses versus discrete driver designs.
Recommended
Photovoltaic String Inverters
In PV string inverters, the 1ED3142MC12HXUMA1 drives SiC MOSFETs and IGBTs in the DC-AC conversion stage with its 6 A source/6.5 A sink drive strength. The 40 ns propagation delay and 20 ns rise/fall times enable switching frequencies above 50 kHz, reducing output-filter magnetics size. The 3000 Vrms isolation supports the high DC-link voltage and provides reinforced insulation for grid-tie safety per IEC 62109. Mount the part with a low-inductance bootstrap diode and 1 µF X7R bypass capacitor for stable VCC2 operation.
Recommended
On-Board EV Chargers (OBC)
The 1ED3142MC12HXUMA1 supports OBC PFC and DCDC stages by driving 650 V/1200 V SiC MOSFETs in totem-pole and LLC topologies. Its high CMTI (>100 kV/μs) rejects the high dv/dt from SiC switching, while 6 A drive strength ensures rapid gate charging to minimize transition losses. The PG-DSO-8 footprint with reinforced isolation simplifies PCB layout and meets IEC 60664-1 creepage for 800 V battery systems. Use separate source/sink gate resistors for tunable EMI and switching-loss balance.
Recommended
Telecom Rectifier Modules
In 48 V telecom rectifiers and -48 V HVDC modules, the 1ED3142MC12HXUMA1 drives the primary-side MOSFETs of a DCDC stage with reinforced isolation to meet IEC 62368-1. Its 40 ns propagation delay enables higher switching frequencies that shrink the transformer, while 6 A drive handles 600 V or 800 V primary MOSFETs. The coreless-transformer isolation integrates the safety barrier without an optocoupler, increasing MTBF in always-on telecom applications.
Recommended
Industrial Welding Power Supplies
Welding inverters rely on robust gate drivers to handle 600 V/1200 V IGBT modules at high switching currents; the 1ED3142MC12HXUMA1 fits this role with 6.5 A sink current that pulls the gate below threshold quickly, preventing Miller-induced shoot-through. The 3000 Vrms reinforced isolation survives the high dv/dt and noisy environment, while the wide-body PG-DSO-8 package maintains creepage under harsh industrial pollution. Pair with a 1 W bootstrap diode and 22 µF X7R VCC2 capacitor for sustained high-duty-cycle operation.
Recommended
Solar Microinverters and Power Optimizers
In microinverters and module-level power optimizers, the 1ED3142MC12HXUMA1 drives the high-frequency primary MOSFETs of a DCDC stage with reinforced isolation to the grid side. Its compact PG-DSO-8 footprint and 6 A drive strength suit 300 W class designs where PCB area is constrained. The 40 ns propagation delay enables zero-voltage-switching (ZVS) phase-shift topologies, while high CMTI maintains reliability under rapid switching transients.
Recommended
Recommended Products Summary
Engineering reference data for 1ED3142MC12HXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1ED3125MU12FXUMA1 | 1EDN7550BXTSA1 | 1EDN7126GXTMA1 | 2ED21844S06JXUMA1 | 2ED2106S06FXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-DSO-8 | PG-DSO-8 - same | PG-SOT-23-6 (different package, included for parametric comparison only) | PG-SOT-23-6 (different package, included for parametric comparison only) | PG-DSO-8 - same | PG-DSO-8 - same |
| Source Drive Current | 6 A | 5 A | 4 A | 2 A | 2.5 A (per channel) | 0.6 A |
| Sink Drive Current | 6.5 A | 5 A | 4 A | 2 A | 2.5 A (per channel) | 0.6 A |
| Isolation Voltage | 3000 Vrms | 3000 Vrms | N/A (non-isolated) | N/A (non-isolated) | 3000 Vrms | 3000 Vrms |
| Propagation Delay (typ.) | 40 ns | 40 ns | 37 ns | 37 ns | 50 ns | 80 ns |
| Channels | 1 | 1 | 1 | 1 | 2 (half-bridge) | 2 (half-bridge) |
| Supported Switches | IGBT/MOSFET/SiC | IGBT/MOSFET/SiC | IGBT/MOSFET | MOSFET only | IGBT/MOSFET | IGBT/MOSFET |
Key Differentiators
- Highest drive current in PG-DSO-8 isolated driver family (vs 1ED3125MU12FXUMA1)
- Single-channel vs half-bridge (vs 2ED21844S06JXUMA1)
- Reinforced isolation versus non-isolated driver (vs 1EDN7126GXTMA1)
Design Notes
Place the bootstrap diode and 1 µF X7R VCC2 bypass capacitor as close to pins 5-6 of the PG-DSO-8 as possible to minimize the high-current gate-charge loop. Estimated: with a 6 A peak source current and a 50 nC gate charge, the bypass capacitor must supply the transient in <1 µs without drooping below UVLO; 1 µF X7R is adequate for switching frequencies up to ~200 kHz.
Route the primary-side (VCC1/GND1) and secondary-side (VCC2/GND2) ground returns so that any high-di/dt loop does not cross the isolation barrier on the PCB. Maintain at least 8 mm creepage between primary and secondary copper to support reinforced insulation per IEC 60747-17. The PG-DSO-8 wide-body package gives a head-start but does not replace good layout.
Twist or tightly couple the gate-drive output traces to the driven switch to minimize parasitic inductance. Estimated: with 20 ns rise time and a 5 nH gate-loop inductance, an Ldi/dt spike of 6 A × 5 nH / 20 ns = 1.5 V can appear at the gate; a small ferrite bead or 2-5 Ω gate resistor damps the resulting ringing and reduces EMI.
Do not exceed the VCC2 UVLO turn-on threshold when using the part to drive SiC MOSFETs with low gate-voltage ratings. The 1ED3142M variant targets IGBT/SiC UVLO (around 11 V); if the application requires a different threshold, choose the 1ED3141 variant or external-divider version. Always validate UVLO behavior in the worst-case cold-start condition.
Compliance Information
EU RoHS compliant per Arrow listing; active part status. Not AEC-Q100 qualified - choose automotive-qualified variants for EV applications.
