1EBN1001AEXUMA1 vs TLE9180D32QKXUMA1 Comparison

Detailed side-by-side comparison of 1EBN1001AEXUMA1 by Infineon and TLE9180D32QKXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EBN1001AEXUMA1 TLE9180D32QKXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Isolated single-channel IGBT/MOSFET gate driver booster —
Series EiceDRIVER™ Boost (1EBN family) —
Configuration High-Side / Low-Side (non-inverting booster) —
Number of Outputs 2 (separate source and sink paths) —
Peak Output Current ±15 A —
Number of Drivers 1 —
Input Signal ASC input, active-clamping disable —
Active Clamping Yes (very fast reaction time) —
Package PG-DSO-14-43 (DSO EP, 14-pin, Tape & Reel) PG-LQFP-64-27 (LQFP-64 EP)
Mounting Type Surface Mount Surface Mount
Operating Temperature -40 °C to +125 °C (automotive grade) -40 C to +150 C junction
Automotive Qualification AEC-Q100 qualified —
MSL Level [DATA_NEEDED: MSL level] —
RoHS Status Compliant —
Target Switching Stage Motor drives > 10 kW (up to 400 A modules) —
Number of Channels — 6 (3 high-side + 3 low-side)
Driver Configuration — Half-Bridge, 3-phase
Supply Voltage Range (VS) — 5.5 V to 72 V
Maximum Pin Voltage — 90 V (bridge, motor and supply pins)
Gate Drive Current — 1 A source/sink
Battery Support — 12 V, 24 V and 48 V systems
Interface — SPI (16-bit) with diagnostics
Current Sense Amplifier — Integrated, adjustable gain
Functional Safety — ASIL-C capable (per ISO 26262)
Package Dimensions — 10 mm x 10 mm x 1.4 mm
AEC-Q100 — Qualified
RoHS — Compliant

Datasheets & Resources

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