1ED44176N01FXUMA1 vs 1EDN7116GXTMA1 Comparison
Detailed side-by-side comparison of 1ED44176N01FXUMA1 by Infineon and 1EDN7116GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1ED44176N01FXUMA1 - 25V 1-Channel Low-Side Gate Driver IC | Infineon
1ED44176N01FXUMA1 β ActiveInfineon
1EDN7116GXTMA1
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveSpecification Comparison
| Parameter | 1ED44176N01FXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.54 | $0.84 |
| Function | Low-side gate driver with integrated OCP, FAULT, EN | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Configuration | Non-inverting, single-channel, low-side | β |
| Number of Channels | 1 | β |
| Input Compatibility | CMOS, TTL | β |
| VCC Supply Voltage Range | 4.5 V to 25 V | β |
| Peak Source Current (typ.) | 0.8 A | β |
| Peak Sink Current (typ.) | 1.75 A | β |
| Propagation Delay (typ.) | 50 ns | β |
| OCP Threshold Tolerance | Β±5% | β |
| OCP Reference | 800 mV to 1.2 V (per LCSC listing) | β |
| Enable Input | Yes (EN, active-high) | β |
| Fault Output | Yes (FAULT, open-drain) | β |
| Operating Temperature | -40 C to +125 C | β |
| Package | 8-pin PG-DSO8 (SOIC-8) | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Family | EiceDRIVER | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | [DATA_NEEDED: MSL level] | MSL3 |
| Driver Configuration | β | Non-inverting, single low-side |
| Number of Drivers | β | 1 |
| Peak Source Current | β | 2 A (typ) |
| Peak Sink Current | β | 4 A (typ) |
| Input Type | β | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | β | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | β | 200 V (max) |
| Propagation Delay (Typ) | β | 9 ns |
| Rise Time (Typ) | β | 3 ns |
| Fall Time (Typ) | β | 3 ns |
| Quiescent Current (Typ) | β | 0.6 mA |
| Miller Clamp | β | Integrated, active |
| UVLO | β | Yes (VCC and gate-rail monitored) |
| Operating Temperature Range | β | -40 Β°C to +125 Β°C |
| Target Switch Technology | β | GaN HEMT (CoolGaN) or Si MOSFET |