1ED44176N01FXUMA1 vs 1EDN7116GXTMA1 对比

详细并排对比 1ED44176N01FXUMA1 出自 Infineon 和 1EDN7116GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 1ED44176N01FXUMA1 1EDN7116GXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $0.84
功能 Low-side gate driver with integrated OCP, FAULT, EN Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Configuration Non-inverting, single-channel, low-side —
Number of Channels 1 —
Input Compatibility CMOS, TTL —
VCC Supply Voltage Range 4.5 V to 25 V —
Peak Source Current (typ.) 0.8 A —
Peak Sink Current (typ.) 1.75 A —
Propagation Delay (typ.) 50 ns —
OCP Threshold Tolerance ±5% —
OCP Reference 800 mV to 1.2 V (per LCSC listing) —
Enable Input Yes (EN, active-high) —
Fault Output Yes (FAULT, open-drain) —
工作温度 -40 C to +125 C —
封装 8-pin PG-DSO8 (SOIC-8) PG-VSON-10-4 (3.0 mm × 3.0 mm)
安装类型 Surface Mount Surface Mount
Family EiceDRIVER —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL level] MSL3
Driver Configuration — Non-inverting, single low-side
Number of Drivers — 1
Peak Source Current — 2 A (typ)
Peak Sink Current — 4 A (typ)
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
工作温度范围 — -40 °C to +125 °C
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

数据手册与资源

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