1ED44176N01FXUMA1 - 25V 1-Channel Low-Side Gate Driver IC | Infineon
MPN: 1ED44176N01FXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.88 | $8.80 |
| 100 | $0.78 | $78.00 |
| 500 | $0.69 | $345.00 |
| 1,000 | $0.61 | $610.00 |
| 2,500 | $0.54 | $1,350.00 |
1ED44176N01FXUMA1 Overview
A gate driver is an interface IC that sits between a low-power control signal (such as a microcontroller PWM output or PWM controller) and the high-current gate of a power MOSFET, IGBT, SiC, or GaN transistor. Gate drivers (hierarchy: gate driver -> driver IC -> power management IC -> semiconductor) provide level shifting, high drive current to rapidly charge/discharge the gate capacitance, and often integrate protection features. Low-side drivers reference the switch source to ground and are the simplest and most cost-effective topology for driving the low-side FET in a half-bridge, low-side switch, or synchronous-rectifier position.
Key features of the 1ED44176N01FXUMA1 include: 0.8 A source / 1.75 A sink peak gate drive current, integrated DESAT-style OCP with Β±5% tolerance, open-drain FAULT output for system-level diagnostics, an EN (enable) input for sequenced startup, CMOS/TTL-compatible logic inputs, typical 50 ns propagation delay, and under-voltage lockout (UVLO) for VCC. The combination of integrated OCP plus FAULT reporting eliminates the need for an external current-sense comparator in many designs.
The device uses a non-inverting buffer architecture with rail-to-rail output swing referenced to VCC and ground. Its low on-resistance output stage ensures fast Miller plateau transitions even with high dV/dt noise on the switched node. The PG-DSO8 package gives a small PCB footprint while maintaining adequate thermal dissipation for the low quiescent dissipation typical of gate drivers.
Typical applications include industrial SMPS half-bridge and full-bridge converters, motor drive low-side switches, solar inverters, UPS systems, and eMobility DC-DC stages. The integrated OCP and FAULT pin make it especially suitable for any application that requires a hardware-level short-circuit protection on a low-side switch. When designing with this driver, place the OCP sense resistor as close to the source pin of the power switch as possible to minimize parasitic inductance, and keep the gate-drive loop area small for clean switching.
Drop-in alternatives for 1ED44176N01FXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1ED44176N01FXUMA1 (same form factor and footprint) β differing in Package, RoHS Status, Function, MSL Level, Number of Drivers.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
1ED44175N01FXUMA1
β Drop-Inπ Reference alternative (not in catalog)
1EDN7116GXTMA1
β Drop-Inβ In Stock
$0.84 / Unit
View Datasheet βIRS2110SPBF
β Drop-Inβ In Stock
$0.72 / Unit
View Datasheet βNCP5106
β Drop-Inπ Reference alternative (not in catalog)
UCC27517
β Drop-Inπ Reference alternative (not in catalog)
1ED44176N01FXUMA1 Maximum Ratings & Electrical Characteristics
| Function | Low-side gate driver with integrated OCP, FAULT, EN |
| Configuration | Non-inverting, single-channel, low-side |
| Number of Channels | 1 |
| Input Compatibility | CMOS, TTL |
| VCC Supply Voltage Range | 4.5 V to 25 V |
| Peak Source Current (typ.) | 0.8 A |
| Peak Sink Current (typ.) | 1.75 A |
| Propagation Delay (typ.) | 50 ns |
| OCP Threshold Tolerance | Β±5% |
| OCP Reference | 800 mV to 1.2 V (per LCSC listing) |
| Enable Input | Yes (EN, active-high) |
| Fault Output | Yes (FAULT, open-drain) |
| Operating Temperature | -40 C to +125 C |
| Package | 8-pin PG-DSO8 (SOIC-8) |
| Mounting Type | Surface Mount |
| Family | EiceDRIVER |
| RoHS Status | Compliant |
1ED44176N01FXUMA1 Pin Configuration
| Pin 1 | IN β Non-inverting logic input (CMOS/TTL compatible) |
| Pin 2 | EN β Enable input (active-high); pulled low disables output |
| Pin 3 | VCC β Supply voltage (4.5 V to 25 V); decouple with 1 uF + 100 nF to GND |
| Pin 4 | GND β Ground reference for input logic and VCC |
| Pin 5 | FAULT β Open-drain fault indicator; asserts low on OCP event |
| Pin 6 | OCP/OC β Over-current protection sense input (compare against internal reference) |
| Pin 7 | OUT β Gate drive output (0.8 A source / 1.75 A sink) |
| Pin 8 | NC β Not connected (per datasheet) |
Typical Applications
1ED44176N01FXUMA1 is suitable for 7 applications: Industrial Switch-Mode Power Supply (SMPS), Solar Inverter Power Stage, Motor Drive Low-Side Switch, Uninterruptible Power Supply (UPS), eMobility DC-DC Converter, Welding and Plasma Cutting Power Stage, Telecom and Server 48 V Power Conversion.
Industrial Switch-Mode Power Supply (SMPS)
The 1ED44176N01FXUMA1 drives the low-side MOSFET in 24 V industrial SMPS half-bridge and full-bridge converters. Its 25 V VCC range covers 24 V bus rails with margin, and the 0.8 A source / 1.75 A sink drive current switches standard 100-200 V MOSFETs at 100-500 kHz with sub-50 ns propagation delay. Integrated OCP with Β±5% tolerance and the open-drain FAULT output provide hardware-level short-circuit protection without a separate comparator IC, reducing BOM cost. Place the OCP sense resistor adjacent to the source pin of the low-side switch to keep the current-sense loop short.
Recommended
Solar Inverter Power Stage
In solar inverters, the 1ED44176N01FXUMA1 drives the low-side IGBT or MOSFET in the DC-DC boost and full-bridge inverter stages. The integrated FAULT output enables fast shutdown of the switch within microseconds when an over-current event is detected, meeting the fast-disconnect requirements of grid-tie inverter standards. The 25 V VCC matches standard 15 V gate-drive rails and tolerates supply transients on the auxiliary winding. Combined with a high-side driver such as the 1ED3124MC12HXUMA1 (XAIPART-listed), it forms a complete half-bridge gate-drive solution for solar string inverters in the 1-10 kW class.
Recommended
Motor Drive Low-Side Switch
For low-voltage BLDC and stepper motor drives, the 1ED44176N01FXUMA1 drives the low-side FETs of the three-phase inverter with integrated OCP for phase-leg short protection. Its 50 ns propagation delay enables 20-50 kHz PWM frequencies typical of motor control, and the SOIC-8 footprint fits compact integrated motor-drive PCBs. The EN pin allows sequenced startup of the three phases, while the FAULT output feeds back to the MCU for emergency stop. Pair with a 3-phase high-side gate driver IC for full inverter drive.
Recommended
Uninterruptible Power Supply (UPS)
In UPS systems, the 1ED44176N01FXUMA1 drives the low-side switches of the bidirectional inverter/converter stage between the battery bank and the AC output. The integrated OCP protects against catastrophic shoot-through during transients, and the FAULT output ties into the UPS controller's protection logic for fast relay-trip. Its 25 V VCC tolerance handles the rectified 12 V / 24 V battery rail with substantial margin. The SOIC-8 package enables dense PCB layout in 1U/2U rackmount UPS form factors where board area is at a premium.
Recommended
eMobility DC-DC Converter
Electric two-wheeler and low-power eMobility DC-DC converters use the 1ED44176N01FXUMA1 to drive the low-side switch of 48 V-to-12 V buck or 12 V-to-48 V boost stages. Its automotive-grade temperature range (-40 C to +125 C) and small SOIC-8 footprint suit compact eBike and eScooter power modules. Integrated OCP protects the converter during output short circuits at the 12 V battery terminal, a critical fault mode in vehicle power systems. Combined with a high-side companion, the driver enables a fully protected half-bridge for 48 V mild-hybrid applications.
Recommended
Welding and Plasma Cutting Power Stage
Welding inverters and plasma cutters rely on the 1ED44176N01FXUMA1 to drive the low-side IGBTs in the secondary-side rectifier and chopper stages. The OCP's fast response protects the IGBT modules from arc-flash-induced short circuits that are common in these high-energy applications. The 25 V VCC tolerates the noisy 15 V auxiliary rail typical of welding inverter transformers. Industrial -40 C to +125 C operation supports the harsh thermal environment inside a welder enclosure.
Recommended
Telecom and Server 48 V Power Conversion
In 48 V telecom and hyperscale server point-of-load converters, the 1ED44176N01FXUMA1 drives the low-side synchronous rectifier MOSFETs following an isolated forward or half-bridge stage. Fast 50 ns propagation delay enables efficient operation at 200-500 kHz switching frequency, and the OCP provides critical protection against shoot-through in the high-current secondary stage. The SOIC-8 package footprint is compatible with dense multi-phase VRM layouts. The driver's EN pin integrates cleanly with PMBus-style sequencer chips for coordinated multi-rail startup.
Recommended
Recommended Products Summary
Engineering reference data for 1ED44176N01FXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1ED44175N01FXUMA1 | 1EDN7116GXTMA1 | IRS2110SPBF | NCP5106 | UCC27517 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Texas Instruments |
| Package | SOIC-8 (PG-DSO8) | SOIC-8 (PG-DSO8) - same | SOT-23-6 - different footprint | SOIC-16 - different pin count | SOIC-8 - same | SOIC-8 - same |
| Channels / Topology | 1-ch low-side non-inverting | 1-ch low-side non-inverting | 1-ch low-side non-inverting | 1-ch high+low-side half-bridge | 1-ch half-bridge (high+low) | 1-ch low-side non-inverting |
| VCC / VB Supply Range | 4.5 V to 25 V | 4.5 V to 25 V | 4.5 V to 20 V | 10 V to 20 V (VS) | 10 V to 20 V (high-side to 600 V) | 4.5 V to 18 V |
| Peak Source Current | 0.8 A | 0.8 A | 1.0 A | 2.0 A | 0.25 A source / 0.5 A sink | 4.0 A |
| Peak Sink Current | 1.75 A | 1.75 A | 2.0 A | 2.0 A | 0.5 A | 4.0 A |
| Propagation Delay | 50 ns (typ.) | 50 ns (typ.) | 20 ns (typ.) | 82 ns (typ.) | 100 ns (typ.) | 13 ns (typ.) |
| Integrated OCP | Yes (Β±5%) | Yes (Β±5%) | No | No | No | No |
| FAULT Output | Yes (open-drain) | Yes (open-drain) | No | No | No | No |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +125 C | -40 C to +140 C |
Key Differentiators
- Integrated Β±5% OCP and FAULT output eliminate external protection IC (vs UCC27517)
- 25 V VCC tolerance exceeds most low-side drivers' 18-20 V max (vs UCC27517 / 1EDN7116GXTMA1)
- SOIC-8 (PG-DSO8) package with EN and FAULT - true single-chip protected driver (vs NCP5106)
Design Notes
Place the VCC decoupling capacitor (1 uF X7R ceramic in parallel with 100 nF NP0) within 2 mm of the VCC pin to suppress switching transients. The gate-drive return (GND pin to power-switch source) must be a low-impedance plane segment, not a thin trace. Estimated: at 0.8 A peak source current with 50 ns rise time, even 20 nH of gate-return inductance produces ~0.8 V of ringing that can re-trigger the driven MOSFET.
Do not leave the OCP/OC pin floating - it must be tied either to the sense-resistor junction or to VCC (to disable OCP). An unterminated OCP input can pick up noise and cause false FAULT assertions. The FAULT pin is open-drain and requires an external pull-up resistor (typically 10 kohm to VCC). If unused, FAULT may be left open but the OCP function should still be validated.
The PG-DSO8 package dissipates primarily through the GND pin and the PCB copper connected to it. While gate drivers dissipate minimal DC power (quiescent current times VCC), the switching losses during gate charge transfer (Q_g x V_g x f_sw) can become significant at high frequencies. Estimated: at Q_g = 50 nC, V_g = 12 V, f_sw = 500 kHz, gate-drive loss is 0.30 W per channel, requiring at least 50 mm^2 of 1 oz copper on the GND pin for thermal relief.
Keep the gate-drive loop (OUT pin to gate, gate to source/emitter, source/emitter back to GND) area as small as physically possible - the loop inductance determines the gate-voltage overshoot and ringing. Place the driver IC immediately adjacent to the power switch, and use a top-layer microstrip from OUT to gate with the return path on an adjacent ground pour. For switches >100 V and >10 A, add a 10 ohm gate resistor to damp LC ringing; below that threshold, a direct connection is usually adequate.
When implementing OCP, place the current-sense resistor in the source return path of the low-side switch and route the OCP/OC sense trace as a Kelvin connection directly to the resistor pad. Do not share the OCP sense trace with the gate-return current path - any common impedance will corrupt the sense voltage. For systems where the OCP threshold must be precise, use a 1% tolerance sense resistor and add a 100 nF RC filter (1 kohm + 100 nF) on the OCP pin to reject sub-microsecond noise spikes that could cause false tripping.
Compliance Information
RoHS and REACH compliant per Infineon product page. Lead-free (Pb-free) and halogen-free per PG-DSO8 packaging standard. Not AEC-Q100 qualified as listed - for automotive applications verify with Infineon part number suffix (e.g., Q suffix or specific automotive ordering code).
