1EDN7116GXTMA1 vs 1EDN7136GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7116GXTMA1 by Infineon and 1EDN7136GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7116GXTMA1
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveInfineon
1EDN7136GXTMA1
1EDN7136GXTMA1 - 4A Single-Channel GaN Gate Driver | Infineon
1EDN7136GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7116GXTMA1 | 1EDN7136GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.84 | $1.02 |
| Function | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | β |
| Driver Configuration | Non-inverting, single low-side | β |
| Number of Drivers | 1 | β |
| Peak Source Current | 2 A (typ) | 4 A |
| Peak Sink Current | 4 A (typ) | 8 A |
| Input Type | Truly Differential Input (TDI) | β |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | β |
| Switch-Node Blocking Voltage | 200 V (max) | β |
| Propagation Delay (Typ) | 9 ns | β |
| Rise Time (Typ) | 3 ns | β |
| Fall Time (Typ) | 3 ns | β |
| Quiescent Current (Typ) | 0.6 mA | β |
| Miller Clamp | Integrated, active | β |
| UVLO | Yes (VCC and gate-rail monitored) | Yes (VDD under-voltage lockout) |
| Operating Temperature Range | -40 Β°C to +125 Β°C | β |
| Package | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) | PG-VSON-10-4 (leadless, thermal pad) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL3 | [DATA_NEEDED: MSL level] |
| RoHS Status | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | β |
| Product Type | β | Low-side gate driver IC |
| Configuration | β | Single channel, non-inverting |
| Target Switch | β | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | β | TTL/CMOS compatible |
| Propagation Delay | β | Sub-nanosecond class |
| Operating Temperature | β | -40 C to +125 C |
| Lead-free | β | Yes |
| Input Voltage (VDD) | β | [DATA_NEEDED: VDD range V] |
| Output Voltage (GaN gate) | β | Approximately 6 V (regulated) |