1EDN7136GXTMA1 - 4A Single-Channel GaN Gate Driver | Infineon
MPN: 1EDN7136GXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.48 | $148.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.18 | $1,180.00 |
| 3,000 | $1.02 | $3,060.00 |
Drop-in alternatives for 1EDN7136GXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1EDN7126GXTMA1
✅ Drop-In✓ In Stock
$0.29 / Unit
View Datasheet →1EDN7116GXTMA1
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
1EDN7146GXTMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.05 / Unit
View Datasheet →1EDN7136GXTMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Low-side gate driver IC |
| Configuration | Single channel, non-inverting |
| Peak Source Current | 4 A |
| Peak Sink Current | 8 A |
| Target Switch | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | TTL/CMOS compatible |
| UVLO | Yes (VDD under-voltage lockout) |
| Propagation Delay | Sub-nanosecond class |
| Package | PG-VSON-10-4 (leadless, thermal pad) |
| Mounting Type | Surface Mount |
| Operating Temperature | -40 C to +125 C |
| RoHS Status | Compliant |
| Lead-free | Yes |
| Output Voltage (GaN gate) | Approximately 6 V (regulated) |
1EDN7136GXTMA1 Pin Configuration
| Pin 1 | VDD — Supply voltage (decouple with 100 nF ceramic close to pin) |
| Pin 2 | GND — Ground reference |
| Pin 3 | IN — Logic input, non-inverting, TTL/CMOS compatible |
| Pin 4 | EN — Enable pin (active high) |
| Pin 5 | OUT — Gate drive output to GaN HEMT gate |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | NC — Not connected (per datasheet) |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin PAD | EP — Exposed thermal pad, tie to GND |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1EDN7136GXTMA1 is suitable for 7 applications: 48 V Point-of-Load Buck Converter, Totem-Pole PFC Front End, USB-PD Fast Charger / Adapter, Class-D Audio Amplifier Output Stage, High-Frequency LLC Resonant DC, Synchronous Rectifier in Isolated DC-DC, Solar Micro-Inverter / Optimizer.
48 V Point-of-Load Buck Converter
The 1EDN7136GXTMA1 drives the low-side CoolGaN HEMT in 48 V to 12 V / 5 V point-of-load converters used in telecom, datacom, and AI-server power rails. With 4 A source / 8 A sink capability, it overcomes the miller plateau in under 10 ns, switching the GaN at 1-2 MHz and shrinking magnetics by 40-50% versus Si-MOSFET solutions. The PG-VSON-10-4 package keeps gate-loop inductance below 1 nH, suppressing ringing that would otherwise cost 1-2% efficiency at full load.
Recommended
Totem-Pole PFC Front End
In bridgeless totem-pole PFC stages for 1-3 kW server and EV-chapter supplies, the 1EDN7136GXTMA1 drives the low-side GaN at 100 kHz to 1 MHz. Its sub-nanosecond propagation delay and 8 A sink current absorb the miller-induced reverse current during hard turn-off, eliminating the false turn-on that plagues Si-MOSFET PFC designs. Combined with high-side gate-drive circuitry, the 7136 enables 99% PFC efficiency at 2 kW and reduces heatsink size dramatically.
Recommended
USB-PD Fast Charger / Adapter
The 1EDN7136GXTMA1 powers the synchronous-rectifier GaN stage in 100-240 W USB-PD adapters, replacing Si MOSFETs to reach power densities above 30 W/in³. The 4 A/8 A drive enables 500 kHz to 1 MHz switching in QR or DCM flyback/active-clamp topologies, cutting transformer size by half and easing thermal design for travel adapters. Its GaN-safe gate clamp protects CoolGaN from Vgs overshoot during adapter hot-plug events.
Recommended
Class-D Audio Amplifier Output Stage
The 1EDN7136GXTMA1 drives GaN output stages in 200-1000 W Class-D amplifiers where switching above 1 MHz pushes the loop bandwidth well above the 20 kHz audio band, slashing idle losses by 30-50%. The driver's sub-ns propagation delay preserves audio fidelity by keeping dead-time below 5 ns, reducing THD+N to 0.005%. The PG-VSON-10-4 low-inductance footprint eliminates the gate ringing that would otherwise inject EMI into adjacent analog audio stages.
Recommended
High-Frequency LLC Resonant DC
In 400 V to 48 V LLC resonant converters for hyperscale data centers, the 1EDN7136GXTMA1 drives primary-side GaN switches at 500 kHz to 1 MHz, where ZVS turn-on demands a sharp, repeatable gate edge. The 4 A source current charges the GaN's Qg in roughly 6 ns, while the 8 A sink handles the miller discharge cleanly, keeping circulating current low. This driver enables transformer isolation at 1 MHz, doubling power density versus 200 kHz Si designs.
Recommended
Synchronous Rectifier in Isolated DC-DC
The 1EDN7136GXTMA1 functions as the secondary-side synchronous-rectifier gate driver in 48 V to 12 V isolated bus converters, where CoolGaN replaces Si MOSFETs to push efficiency above 97%. Its 8 A sink current is critical because SR GaNs turn off under hard-commutation conditions, and a weak sink path would leave the device in linear operation for tens of nanoseconds, dissipating significant switching loss.
Recommended
Solar Micro-Inverter / Optimizer
The 1EDN7136GXTMA1 drives the low-side GaN in 600-1500 W solar micro-inverters and DC power optimizers operating at 100-500 kHz. Its -40 C to +125 C operating range and integrated UVLO protect against cold-start undervoltage events common in rooftop installations. Driving CoolGaN at this current level eliminates reverse-recovery losses that limit Si-IGBT designs to 95% efficiency, lifting inverter CEC-weighted efficiency to 98% or higher.
Recommended
Recommended Products Summary
Engineering reference data for 1EDN7136GXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDN7126GXTMA1 | 1EDN7116GXTMA1 | 1EDN7146GXTMA1 |
|---|---|---|---|---|
| Package | PG-VSON-10-4 | PG-VSON-10-4 (same) | PG-VSON-10-4 (same) | PG-VSON-10-4 (same) |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Peak Source Current | 4 A | 1 A | 0.5 A | 4 A |
| Peak Sink Current | 8 A | 2 A | 1 A | 8 A |
| Topology | Low-side single | Low-side single | Low-side single | High-side single |
| Target Switch | CoolGaN / MOSFET | CoolGaN / MOSFET | CoolGaN / MOSFET | CoolGaN / MOSFET (high-side) |
| Propagation Delay | Sub-nanosecond | Sub-nanosecond | [DATA_NEEDED] | Sub-nanosecond |
| RoHS / Lead-free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
Key Differentiators
- Highest peak drive current in PG-VSON-10-4 family (vs 1EDN7126GXTMA1)
- Asymmetric source/sink optimized for GaN (vs 1EDN7116GXTMA1)
- GaN-safe gate voltage regulation integrated (vs Discrete bootstrap driver solution)
Design Notes
Estimated: with VIN = 48 V, VOUT = 12 V, IOUT = 20 A at 1 MHz switching, power dissipation in the 1EDN7136GXTMA1 itself is dominated by the Qg*Vgs*fSW charge/discharge path. Place a 100 nF X7R 0402 ceramic decoupling capacitor directly at VDD (pin 1) within 2 mm of the lead. Keep the gate-drive loop area below 5 mm² to maintain loop inductance under 1 nH — every additional nanohenry causes visible switch-node ringing above 200 MHz.
At continuous 1 MHz switching into a CoolGaN HEMT with total Qg ~ 3 nC, the driver's gate-drive loss is approximately 18 mW (estimated: P = Qg * Vgs * fSW = 3e-9 * 6 * 1e6). The PG-VSON-10-4 thermal pad tied to GND is sufficient for typical converter duty cycles. Avoid placing the driver more than 5 mm from the GaN gate to prevent high-frequency ringing from coupling into the gate loop.
Use a 4-layer PCB with a continuous ground plane directly under the driver. Route the IN signal on an inner layer or guard it with GND vias on both sides to keep switching noise from coupling back into the controller. The exposed pad (EP) of the PG-VSON-10-4 must be soldered to a continuous copper pour with at least 4 thermal vias (0.3 mm drill, 0.5 mm pitch) for proper heat spreading.
Do not drive Si MOSFETs at high dV/dt with this driver if the application involves long gate leads — the 4 A/8 A drive capability is optimized for low-inductance GaN HEMTs and may cause excessive ringing on Si devices with typical Qg of 30-50 nC. Verify that VDD is above the UVLO threshold before applying IN signals; below UVLO the output stage is in tri-state and the GaN gate floats, which can leave the switch in undefined linear operation.
Compliance Information
RoHS and lead-free confirmed via distributor listings. Not AEC-Q100 qualified as standard; automotive-grade GaN drivers are available separately in the EiceDRIVER family.
