1EDN7116GXTMA1 vs 1EDN7136GXTMA1 比較
詳細な並列比較: 1EDN7116GXTMA1 メーカー: Infineon および 1EDN7136GXTMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | 1EDN7116GXTMA1 | 1EDN7136GXTMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | Power MOSFET Drivers | Power MOSFET Drivers |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.84 | $1.02 |
| 機能 | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs | — |
| Driver Configuration | Non-inverting, single low-side | — |
| Number of Drivers | 1 | — |
| Peak Source Current | 2 A (typ) | 4 A |
| Peak Sink Current | 4 A (typ) | 8 A |
| Input Type | Truly Differential Input (TDI) | — |
| Supply Voltage (VCC) | 4.5 V to 5.5 V | — |
| Switch-Node Blocking Voltage | 200 V (max) | — |
| Propagation Delay (Typ) | 9 ns | — |
| Rise Time (Typ) | 3 ns | — |
| Fall Time (Typ) | 3 ns | — |
| Quiescent Current (Typ) | 0.6 mA | — |
| Miller Clamp | Integrated, active | — |
| UVLO | Yes (VCC and gate-rail monitored) | Yes (VDD under-voltage lockout) |
| 動作温度範囲 | -40 °C to +125 °C | — |
| パッケージ | PG-VSON-10-4 (3.0 mm × 3.0 mm) | PG-VSON-10-4 (leadless, thermal pad) |
| 実装タイプ | Surface Mount | Surface Mount |
| MSLレベル | MSL3 | [DATA_NEEDED: MSL level] |
| RoHS ステータス | Compliant | Compliant |
| Target Switch Technology | GaN HEMT (CoolGaN) or Si MOSFET | — |
| Product Type | — | Low-side gate driver IC |
| Configuration | — | Single channel, non-inverting |
| Target Switch | — | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | — | TTL/CMOS compatible |
| Propagation Delay | — | Sub-nanosecond class |
| 動作温度 | — | -40 C to +125 C |
| Lead-free | — | Yes |
| Input Voltage (VDD) | — | [DATA_NEEDED: VDD range V] |
| Output Voltage (GaN gate) | — | Approximately 6 V (regulated) |