1EDN7146GXTMA1 vs 1EDN7136GXTMA1 Comparison
Detailed side-by-side comparison of 1EDN7146GXTMA1 by Infineon and 1EDN7136GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
1EDN7146GXTMA1
1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon
1EDN7146GXTMA1 β ActiveInfineon
1EDN7136GXTMA1
1EDN7136GXTMA1 - 4A Single-Channel GaN Gate Driver | Infineon
1EDN7136GXTMA1 β ActiveSpecification Comparison
| Parameter | 1EDN7146GXTMA1 | 1EDN7136GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.05 | $1.02 |
| Driver Type | High-side, single-channel | β |
| Number of Drivers | 1 | β |
| Logic Type | Non-Inverting | β |
| Input Type | TDI (Truly Differential Inductor) | β |
| Maximum Bootstrap Voltage (VB) | 200 V | β |
| Supply Voltage (VCC) | 4.5 V to 20 V | β |
| Source/Sink Drive Current | 500 mA / 500 mA | β |
| Gate Drive Voltage | Up to 11 V (typ) | β |
| Propagation Delay (typ) | 40 ns | β |
| Rise/Fall Time (typ) | [DATA_NEEDED: rise/fall time] | β |
| UVLO (VCC) | Yes | β |
| UVLO (VB) | Yes | β |
| Bootstrap Diode | Integrated | β |
| Operating Temperature | -40 C to +125 C | -40 C to +125 C |
| Package | PG-VSON-10-4 | PG-VSON-10-4 (leadless, thermal pad) |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Product Type | β | Low-side gate driver IC |
| Configuration | β | Single channel, non-inverting |
| Peak Source Current | β | 4 A |
| Peak Sink Current | β | 8 A |
| Target Switch | β | GaN HEMT (CoolGaN) / MOSFET |
| Input Logic | β | TTL/CMOS compatible |
| UVLO | β | Yes (VDD under-voltage lockout) |
| Propagation Delay | β | Sub-nanosecond class |
| Lead-free | β | Yes |
| Input Voltage (VDD) | β | [DATA_NEEDED: VDD range V] |
| Output Voltage (GaN gate) | β | Approximately 6 V (regulated) |