1EDN7146GXTMA1 - 200V TDI Gate Driver IC | Infineon
MPN: 1EDN7146GXTMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.2 | $600.00 |
| 1,000 | $1.05 | $1,050.00 |
Drop-in alternatives for 1EDN7146GXTMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1EDN7116GXTMA1
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View Datasheet →1EDN7146GXTMA1 Maximum Ratings & Electrical Characteristics
| Driver Type | High-side, single-channel |
| Number of Drivers | 1 |
| Logic Type | Non-Inverting |
| Input Type | TDI (Truly Differential Inductor) |
| Maximum Bootstrap Voltage (VB) | 200 V |
| Supply Voltage (VCC) | 4.5 V to 20 V |
| Source/Sink Drive Current | 500 mA / 500 mA |
| Gate Drive Voltage | Up to 11 V (typ) |
| Propagation Delay (typ) | 40 ns |
| UVLO (VCC) | Yes |
| UVLO (VB) | Yes |
| Bootstrap Diode | Integrated |
| Operating Temperature | -40 C to +125 C |
| Package | PG-VSON-10-4 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| MSL Level | 1 |
1EDN7146GXTMA1 Pin Configuration
| Pin 1 | GND — Ground reference for VCC and input logic |
| Pin 2 | IN+ — Non-inverting differential PWM input |
| Pin 3 | IN- — Inverting differential PWM input |
| Pin 4 | VCC — Low-side supply (4.5 V to 20 V) |
| Pin 5 | VS — High-side floating supply return (switch node reference) |
| Pin 6 | VB — High-side floating bootstrap supply |
| Pin 7 | OUT — Gate-drive output to high-side MOSFET gate |
| Pin 8 | NC — Not connected (per datasheet) |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | EP — Exposed thermal pad (tie to GND for thermal dissipation) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
1EDN7146GXTMA1 is suitable for 6 applications: 48 V Telecom Intermediate Bus Converter, Server 48 V Point-of-Load (PoL) Converter, Synchronous Rectification in Half-Bridge Converters, Industrial Motor Drive Gate Interface, Class-D Audio Amplifier Output Stage, Solar Inverter DC-DC Stage.
48 V Telecom Intermediate Bus Converter
The 1EDN7146GXTMA1 fits 48 V telecom brick and intermediate bus converters (IBC) because of its 200 V VB rating and TDI noise immunity. With 500 mA source/sink capability and ~40 ns propagation, it can drive GaN HEMTs or silicon MOSFETs at switching frequencies above 1 MHz, which is essential for meeting the size constraints of 1/4-brick and 1/8-brick form factors. Place the driver adjacent to the high-side MOSFET and use a 100 nF bootstrap capacitor for stable VB refresh. Unlike lower-voltage drivers, the 200 V rating tolerates 48 V nominal rails with substantial transient headroom.
Recommended
Server 48 V Point-of-Load (PoL) Converter
The 1EDN7146GXTMA1 is well suited for server 48 V-to-PoL converters stepping down to 12 V, 5 V, or 3.3 V rails. The 200 V VB rating and integrated bootstrap diode reduce BOM count and PCB area, both critical for high-density server motherboards. TDI input topology rejects switching noise on the PWM control signal, allowing the controller to be placed further from the switching node without signal-integrity issues. The 500 mA drive strength matches the gate-charge requirements of low-Qg GaN devices used in modern 48 V PoL stages.
Recommended
Synchronous Rectification in Half-Bridge Converters
Use the 1EDN7146GXTMA1 to drive the high-side switch in half-bridge and full-bridge converters with synchronous rectification. The 200 V VB rating tolerates bridge transients, and the integrated bootstrap diode simplifies the auxiliary supply. With 500 mA drive current, the IC easily handles the gate charge of typical 100 V MOSFETs at 500 kHz switching frequency. The TDI input rejects common-mode noise from the bridge switching, eliminating spurious re-trigger events. The dead-time blanking feature further protects against shoot-through during dead-time edges.
Recommended
Industrial Motor Drive Gate Interface
The 1EDN7146GXTMA1 provides high-side gate-drive interface for industrial motor-drive applications such as three-phase inverters and servo amplifiers. The 200 V VB rating supports 100 V to 150 V DC bus rails common in industrial drives. TDI input topology ensures clean switching signals even when the controller is referenced to a noisy chassis ground. The device operates from -40 C to +125 C, suitable for industrial temperature environments. The small PG-VSON-10-4 package fits within tight motor-control PCB layouts.
Recommended
Class-D Audio Amplifier Output Stage
The 1EDN7146GXTMA1 drives the half-bridge output stage of Class-D audio amplifiers where low-noise, fast switching is critical. The TDI input topology rejects PWM-signal common-mode noise, which preserves audio fidelity by preventing spurious switching that would create EMI and audible artifacts. The 500 mA drive capability handles the gate charge of high-current audio output MOSFETs, and the 200 V VB rating supports up to 100 V audio bus rails for high-power amplifier designs. The integrated bootstrap reduces external component count.
Recommended
Solar Inverter DC-DC Stage
In solar micro-inverters and string-inverter DC-DC boost stages, the 1EDN7146GXTMA1 drives high-side switches in 100 V to 150 V boost topologies. The 200 V VB rating handles high transient voltages encountered during MPPT transitions and grid-side fault events. TDI input topology ensures robust PWM signal integrity in the electrically noisy environment of an inverter cabinet. The integrated bootstrap diode and small PG-VSON-10-4 package enable compact, high-efficiency solar power electronics with reduced design risk.
Recommended
Recommended Products Summary
Engineering reference data for 1EDN7146GXTMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDN7116GXTMA1 | 1EDN7511BXUSA1 | 2ED2108S06FXUMA1 | 2EDL8123GXUMA1 | 2EDL8023GXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-VSON-10-4 | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same | PG-VSON-10-4 - same |
| Maximum Bootstrap Voltage (VB) | 200 V | 200 V | 40 V | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Drive Current (source/sink) | 500 mA / 500 mA | 500 mA / 500 mA | [DATA_NEEDED] | 290 mA / 700 mA | [DATA_NEEDED] | [DATA_NEEDED] |
| Number of Channels | 1 | 1 | 1 | 2 (half-bridge) | 2 | 2 |
| Logic Polarity | Non-Inverting | Inverting | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Integrated Bootstrap Diode | Yes | Yes | No | Yes | Yes | Yes |
| Target Technology | Silicon MOSFET / GaN | Silicon MOSFET / GaN | Silicon MOSFET | Silicon MOSFET / GaN | GaN | GaN |
| Unit Price (qty 1000, as of 2026-09-14) | $1.05 | [DATA_NEEDED] | [DATA_NEEDED] | $0.95 | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Industry-leading 200 V VB rating with integrated bootstrap diode (vs 1EDN7511BXUSA1)
- Single-channel high-side driver enables simpler PCB layouts (vs 2ED2108S06FXUMA1)
- TDI (Truly Differential Inductor) input topology rejects common-mode noise (vs 2EDL8123GXUMA1)
Design Notes
Bootstrap capacitor sizing: Choose the bootstrap capacitor based on the gate-charge (Qg) of the driven MOSFET and the maximum allowable voltage droop on the VB rail. A 100 nF X7R ceramic is typical for switching frequencies above 100 kHz; below that, increase to 470 nF or 1 uF. The integrated bootstrap diode handles refresh current, but the capacitor must recharge fully during each low-side ON interval. Reference: Infineon 1EDN71x6G datasheet, bootstrap circuit section.
Minimize the high-side gate-drive loop area: Route VB, the bootstrap capacitor, VS, and the gate of the high-side MOSFET as a tight loop with the smallest practical area. This reduces parasitic inductance and prevents ringing that can cause spurious re-triggering or excessive dV/dt coupling into the input. Place a 100 nF VCC decoupling capacitor within 2 mm of the VCC pin and tie the exposed thermal pad to a clean GND plane for thermal dissipation.
Do not exceed 200 V on VB under any condition, including transient overshoot from the switching node. If the design uses a 100 V or 150 V MOSFET, add adequate snubber circuitry to limit VS ringing within the absolute maximum ratings. Designers often overlook the IN+/IN- polarity when migrating from inverting to non-inverting variants; the 1EDN7116GXTMA1 is the inverting sibling of the 1EDN7146GXTMA1 - verify the logic polarity before PCB assembly.
The PG-VSON-10-4 package has a thermal resistance (theta JA) of approximately 50 C/W when soldered to a 1 oz copper pad area of 1 square inch on a standard JEDEC test board. For continuous high-frequency switching above 1 MHz, calculate the gate-drive power dissipation: P = Qg * Vgs * fsw. At 1 MHz with Qg = 20 nC and Vgs = 10 V, dissipation is 200 mW, which produces a 10 C junction-temperature rise. Ensure the copper pad is sufficient for the application.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified (industrial-grade, not automotive-grade). Lead-free and halogen-free packaging per industry-standard 1EDN71x6G datasheet.
