1EDN7146UXTSA1 vs IR2304SPBF Comparison

Detailed side-by-side comparison of 1EDN7146UXTSA1 by Infineon and IR2304SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
1EDN7146UXTSA1

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 βœ“ Active

Specification Comparison

Parameter 1EDN7146UXTSA1 IR2304SPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.82 $0.48
Driver Type Single-channel high-side TDI gate driver β€”
Maximum Blocking Voltage 200 V β€”
Input Configuration Truly differential (TDI) β€”
Output Current (Source / Sink) 1.5 A / 2.5 A β€”
Propagation Delay [DATA_NEEDED: typical propagation delay ns] β€”
Rise Time [DATA_NEEDED: typical rise time ns] β€”
Fall Time [DATA_NEEDED: typical fall time ns] β€”
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] β€”
Operating Temperature Range -40C to +125C -40 C to +125 C
Package PG-VSON-1 (6-pin with exposed pad) 8-Pin SOIC (SO-8 N)
Mounting Type Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET β€”
MSL Level [DATA_NEEDED: MSL rating] β€”
RoHS Status Compliant Compliant (Pb-free)
Topology Support Half-bridge, low-side, high-side β€”
Product Type β€” Half-Bridge Gate Driver IC
Configuration β€” High and Low Side, Independent Channels
Number of Outputs β€” 2
Maximum Offset (Bootstrap) Voltage β€” 600 V
Gate Drive Supply Voltage (VCC) β€” 10 V to 20 V
Output Source/Sink Current β€” 60 mA / 130 mA
Propagation Delay (Typical) β€” 220 ns
Input Logic Compatibility β€” 3.3 V, 5 V, 15 V
Undervoltage Lockout (UVLO) β€” Both High-Side and Low-Side Channels
Negative Transient Voltage Tolerance β€” Yes (dV/dt immune)
Logic Input Polarity β€” Non-Inverting
Technology β€” HVIC + Latch-Immune CMOS, Monolithic

Datasheets & Resources

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