1EDN7146UXTSA1 vs IR2304SPBF 对比

详细并排对比 1EDN7146UXTSA1 出自 Infineon 和 IR2304SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN7146UXTSA1 1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 - 200V High-Side GaN Gate Driver | Infineon

1EDN7146UXTSA1 ✓ 量产中

规格对比

参数 1EDN7146UXTSA1 IR2304SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $0.48
Driver Type Single-channel high-side TDI gate driver —
Maximum Blocking Voltage 200 V —
Input Configuration Truly differential (TDI) —
Output Current (Source / Sink) 1.5 A / 2.5 A —
Propagation Delay [DATA_NEEDED: typical propagation delay ns] —
上升时间 [DATA_NEEDED: typical rise time ns] —
下降时间 [DATA_NEEDED: typical fall time ns] —
Supply Voltage (VCC) [DATA_NEEDED: VCC range V] —
工作温度范围 -40C to +125C -40 C to +125 C
封装 PG-VSON-1 (6-pin with exposed pad) 8-Pin SOIC (SO-8 N)
安装类型 Surface Mount Surface Mount
Target Transistor GaN SG HEMT or power MOSFET —
MSL 等级 [DATA_NEEDED: MSL rating] —
RoHS 状态 Compliant Compliant (Pb-free)
Topology Support Half-bridge, low-side, high-side —
Product Type — Half-Bridge Gate Driver IC
Configuration — High and Low Side, Independent Channels
输出数量 — 2
Maximum Offset (Bootstrap) Voltage — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source/Sink Current — 60 mA / 130 mA
Propagation Delay (Typical) — 220 ns
Input Logic Compatibility — 3.3 V, 5 V, 15 V
Undervoltage Lockout (UVLO) — Both High-Side and Low-Side Channels
Negative Transient Voltage Tolerance — Yes (dV/dt immune)
Logic Input Polarity — Non-Inverting
Technology — HVIC + Latch-Immune CMOS, Monolithic

数据手册与资源

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