1EDN7511B vs 1EDN8511BXUSA1 Comparison

Detailed side-by-side comparison of 1EDN7511B by Infineon and 1EDN8511BXUSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 1EDN7511B 1EDN8511BXUSA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.38 $0.54
Driver Type Single-channel low-side gate driver —
Number of Channels 1 —
Peak Source Current 4 A 4 A
Peak Sink Current 8 A 8 A
Supply Voltage (VCC) 4.5 V to 20 V —
UVLO Threshold (logic-level variant) 1.9 V to 2.3 V —
UVLO Threshold (normal-level variant) 800 mV to 1.2 V (typ) —
Propagation Delay 4.5 ns (typ) —
Rise Time (typ) 19 ns —
Fall Time (typ) 19 ns —
Output On-Resistance (pull-up) 0.85 ohm —
Output On-Resistance (pull-down) 0.35 ohm —
Input Logic Inverting + Non-inverting —
Operating Temperature -40 C to +150 C —
Package SOT-23-6 (PG-SOT23-6-2) PG-SOT23-6-2
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant
Supported Switches MOSFET (OptiMOS, CoolMOS), GaN HEMT —
Channel Count — 1
Driver Configuration — Low-side
Input Stage — Inverting and non-inverting
Propagation Delay Accuracy — [DATA_NEEDED: typical propagation delay]
UVLO Threshold — 8 V
Driver Supply Voltage (VCC) — [DATA_NEEDED: VCC range upper limit]
Operating Junction Temperature — -40 °C to +150 °C
Pin Count — 6
Logic Input Compatibility — TTL / CMOS
Target Switch Type — Power MOSFET, GaN HEMT
MSL Level — [DATA_NEEDED: MSL rating]

Datasheets & Resources

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