1EDN7511B vs 1EDN8511BXUSA1 Vergleich
Detaillierter Direktvergleich von 1EDN7511B von Infineon und 1EDN8511BXUSA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 1EDN7511B | 1EDN8511BXUSA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,38 | $0,54 |
| Driver Type | Single-channel low-side gate driver | — |
| Number of Channels | 1 | — |
| Peak Source Current | 4 A | 4 A |
| Peak Sink Current | 8 A | 8 A |
| Supply Voltage (VCC) | 4.5 V to 20 V | — |
| UVLO Threshold (logic-level variant) | 1.9 V to 2.3 V | — |
| UVLO Threshold (normal-level variant) | 800 mV to 1.2 V (typ) | — |
| Propagation Delay | 4.5 ns (typ) | — |
| Rise Time (typ) | 19 ns | — |
| Fall Time (typ) | 19 ns | — |
| Output On-Resistance (pull-up) | 0.85 ohm | — |
| Output On-Resistance (pull-down) | 0.35 ohm | — |
| Input Logic | Inverting + Non-inverting | — |
| Betriebstemperatur | -40 C to +150 C | — |
| Gehäuse | SOT-23-6 (PG-SOT23-6-2) | PG-SOT23-6-2 |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | Compliant |
| Supported Switches | MOSFET (OptiMOS, CoolMOS), GaN HEMT | — |
| Channel Count | — | 1 |
| Driver Configuration | — | Low-side |
| Input Stage | — | Inverting and non-inverting |
| Propagation Delay Accuracy | — | [DATA_NEEDED: typical propagation delay] |
| UVLO Threshold | — | 8 V |
| Driver Supply Voltage (VCC) | — | [DATA_NEEDED: VCC range upper limit] |
| Betriebs-Sperrschichttemperatur | — | -40 °C to +150 °C |
| Pin-Anzahl | — | 6 |
| Logic Input Compatibility | — | TTL / CMOS |
| Target Switch Type | — | Power MOSFET, GaN HEMT |
| MSL-Level | — | [DATA_NEEDED: MSL rating] |