2ED2304S06FXUMA1 vs IR2109SPBF Comparison

Detailed side-by-side comparison of 2ED2304S06FXUMA1 by Infineon and IR2109SPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
2ED2304S06FXUMA1 2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon

2ED2304S06FXUMA1 βœ“ Active

Specification Comparison

Parameter 2ED2304S06FXUMA1 IR2109SPBF
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.66 $1.05
Driver Configuration Half-Bridge (High-Side + Low-Side) Half-Bridge
Technology Infineon thin-film SOI β€”
Blocking Voltage (High-Side) 650 V β€”
Source Current (typ.) 0.36 A β€”
Sink Current (typ.) 0.7 A β€”
Input Logic Compatibility 3.3 V CMOS / LSTTL (Schmitt-trigger) 3.3 V / 5 V CMOS / TTL
VCC Supply Range 10 V to 17 V β€”
Bootstrap Diode Integrated (BSD) Integrated
Undervoltage Lockout (UVLO) Yes (VCC and VB-VS) β€”
Interlock / Anti-Shoot-Through Built-in β€”
Propagation Delay (typ.) 200 ns β€”
Operating Temperature Range -40C to +125C β€”
Package PG-DSO-8-910 (DSO-8) SOIC-8
Mounting Type Surface Mount Surface Mount
MSL Level 2 β€”
RoHS Status Compliant Compliant
Number of Drivers β€” 2 (high-side + low-side)
High-Side Voltage Tolerance β€” 600 V
Supply Voltage (VCC) β€” 10 V to 20 V
Source Current (typical) β€” 0.2 A
Sink Current (typical) β€” 0.35 A
Turn-On Propagation Delay β€” 150 ns
Turn-Off Propagation Delay β€” 150 ns
Rise Time β€” 200 ns
Fall Time β€” 50 ns
Quiescent VCC Current β€” 1 mA
Undervoltage Lockout β€” Yes (VCC)
Operating Junction Temperature β€” -40 C to +150 C

Datasheets & Resources

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