2ED2304S06FXUMA1 - 650V Half-Bridge Gate Driver | Infineon
MPN: 2ED2304S06FXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.45 | $1.45 |
| 10 | $1.28 | $12.80 |
| 100 | $1.05 | $105.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.79 | $790.00 |
| 3,000 | $0.66 | $1,980.00 |
2ED2304S06FXUMA1 Overview
A gate driver is a power-management IC that sits between a low-voltage control signal (microcontroller, PWM controller, or logic) and the gate of a high-voltage power switch. The 2ED2304S06F belongs to the half-bridge gate driver category, meaning it contains both a high-side and a low-side driver plus level-shifting logic so that a single logic input pair can control a phase leg in a totem-pole or half-bridge topology. Compared with discrete opto-coupled or transformer drivers, monolithic half-bridge ICs reduce BOM count, propagation delay mismatch, and PCB area in switch-mode power supplies, motor drives, and lighting.
Key features include 650 V absolute maximum blocking voltage on the high-side driver, integrated bootstrap diode to remove an external discrete, Schmitt-trigger CMOS/LSTTL inputs compatible down to 3.3 V, built-in dead-time and interlock logic to prevent shoot-through, and matched propagation delays of approximately 200 ns for symmetric switching. The 2ED2304S06F is also specified for VCC operation from 10 V to 17 V with undervoltage lockout (UVLO) on both the low-side VCC and the high-side VB-VS rail.
The thin-film-SOI process enables negative VS transients (typical of motor-drive back-EMF events) to be tolerated without latch-up, a recurring failure mechanism in older junction-isolated drivers. The integrated BSD replaces an external high-voltage diode plus resistor, simplifying the bootstrap supply for the high-side. Typical applications for the 2ED2304S06FXUMA1 include small home appliances (fan, pump, and induction-cooking drives), low-power motor drives, switched-mode power supplies (SMPS) up to a few hundred watts, and solid-state relay (SSR) output stages.
Designers should verify that the chosen MOSFET or IGBT total gate charge Qg remains below the driver's source/sink capability at the intended switching frequency so that rise and fall times stay within target EMI margins. Bootstrap capacitor sizing, dead-time selection, and gate-resistor tuning are the three primary design tasks when using this driver in a half-bridge topology.
This page consolidates distributor pricing, drop-in same-package alternatives, and practical PCB design notes that go beyond what appears in the manufacturer datasheet, giving engineers a single reference for sourcing and applying the 2ED2304S06FXUMA1.
Drop-in alternatives for 2ED2304S06FXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2ED2304S06FXUMA1 (same form factor and footprint) β differing in Input Logic Compatibility, Package, RoHS Status, Bootstrap Diode, Configuration.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR2304SPBF
β Drop-Inβ In Stock
$0.48 / Unit
View Datasheet β2ED2304S06FXUMA2
β Drop-Inπ Reference alternative (not in catalog)
2ED21064S06JXUMA1
β Drop-Inβ In Stock
$0.85 / Unit
View Datasheet βIR2109SPBF
β Drop-Inβ In Stock
$1.05 / Unit
View Datasheet β2ED2304S06FXUMA1 Maximum Ratings & Electrical Characteristics
| Driver Configuration | Half-Bridge (High-Side + Low-Side) |
| Technology | Infineon thin-film SOI |
| Blocking Voltage (High-Side) | 650 V |
| Source Current (typ.) | 0.36 A |
| Sink Current (typ.) | 0.7 A |
| Input Logic Compatibility | 3.3 V CMOS / LSTTL (Schmitt-trigger) |
| VCC Supply Range | 10 V to 17 V |
| Bootstrap Diode | Integrated (BSD) |
| Undervoltage Lockout (UVLO) | Yes (VCC and VB-VS) |
| Interlock / Anti-Shoot-Through | Built-in |
| Propagation Delay (typ.) | 200 ns |
| Operating Temperature Range | -40C to +125C |
| Package | PG-DSO-8-910 (DSO-8) |
| Mounting Type | Surface Mount |
| MSL Level | 2 |
| RoHS Status | Compliant |
2ED2304S06FXUMA1 Pin Configuration
| Pin 1 | VCC β Low-side and logic supply (10 V to 17 V) |
| Pin 2 | HIN β High-side logic input (Schmitt-trigger, 3.3 V compatible) |
| Pin 3 | LIN β Low-side logic input (Schmitt-trigger, 3.3 V compatible) |
| Pin 4 | COM β Low-side return / ground |
| Pin 5 | LO β Low-side gate drive output |
| Pin 6 | VS β High-side floating supply return |
| Pin 7 | HO β High-side gate drive output |
| Pin 8 | VB β High-side floating supply (bootstrap) |
Typical Applications
2ED2304S06FXUMA1 is suitable for 6 applications: Small Home Appliance Motor Drives, Switched-Mode Power Supplies (SMPS), Solid-State Relay (SSR) Output Stages, Induction Heating Cooktops, PFC + Half-Bridge Converter Stages, Solar Micro-Inverters and Power Optimizers.
Small Home Appliance Motor Drives
The 2ED2304S06FXUMA1's 650 V blocking rating and 0.36 A/0.7 A source/sink drive directly support small-motor half-bridge drives used in kitchen appliances such as induction cookers, blenders, and washing-machine pumps. Its integrated bootstrap diode removes an external high-voltage rectifier, simplifying the BOM for cost-sensitive appliance designs. Compared with discrete opto-driver solutions, the SOI technology tolerates VS-node transients during motor back-EMF commutation without latch-up, improving field reliability in appliances subjected to inductive kickback.
Recommended
Switched-Mode Power Supplies (SMPS)
The 2ED2304S06FXUMA1 is well matched to half-bridge SMPS topologies up to several hundred watts, including telecom bricks, LED TV power stages, and industrial DC-DC converters. The integrated BSD saves an external high-voltage diode on the floating supply rail, while 200 ns typical propagation delay supports switching frequencies in the 50-200 kHz range. For higher-power designs requiring stronger gate drive, the same DSO-8 footprint accepts the 2ED21064S06JXUMA1 family member without PCB rework.
Recommended
Solid-State Relay (SSR) Output Stages
In solid-state relay designs, the 2ED2304S06FXUMA1 drives two back-to-back MOSFETs or a TRIAC, replacing electromechanical relays with a long-life, silent, fast-switching alternative. The 650 V blocking rating covers 230 VAC mains, and the integrated bootstrap diode simplifies the high-side drive for AC zero-cross or random-fire switching. Schmitt-trigger 3.3 V inputs interface directly to microcontrollers and optocouplers, simplifying the SSR front end.
Recommended
Induction Heating Cooktops
Induction-cooking resonant converters operate at high bus voltages with hard-switched half-bridge legs, demanding a 650 V-capable driver with negative transient immunity. The 2ED2304S06FXUMA1's SOI process survives VS-node excursions typical of resonant tank ringing, while the built-in interlock logic prevents shoot-through that would otherwise destroy the IGBTs. The PG-DSO-8 package keeps the driver close to the switching devices, minimizing gate-loop inductance.
Recommended
PFC + Half-Bridge Converter Stages
Two-stage converters often pair a PFC front-end with a half-bridge LLC or phase-shift stage, where the 2ED2304S06FXUMA1 drives the half-bridge primary side. The integrated BSD simplifies the high-side floating supply, and the VCC UVLO protects the half-bridge from low-voltage startup glitches. Designers can use the same driver across 100 W to 500 W converter platforms by changing only the power MOSFETs.
Recommended
Solar Micro-Inverters and Power Optimizers
Module-level solar electronics such as micro-inverters and DC power optimizers use compact half-bridge stages driven by the 2ED2304S06FXUMA1. The 650 V rating supports 400-600 VDC link voltages typical of single-phase solar micro-inverter designs, while the integrated BSD and small PG-DSO-8 package keep board area low. Negative VS transient immunity is critical in solar systems where long DC cables inject ringing onto the switching node.
Recommended
Recommended Products Summary
Engineering reference data for 2ED2304S06FXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR2304SPBF | 2ED2304S06FXUMA2 | 2ED21064S06JXUMA1 | IR2109SPBF |
|---|---|---|---|---|---|
| Package | PG-DSO-8-910 | PG-DSO-8 - same | PG-DSO-8-910 - same | DSO-8 - same family | SOIC-8 / PDIP-8 - same family |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Blocking Voltage | 650 V | 600 V | 650 V | 650 V | 600 V |
| Source Current | 0.36 A | 0.18 A | 0.36 A | 0.55 A | 0.12 A |
| Sink Current | 0.7 A | 0.35 A | 0.7 A | 1.0 A | 0.25 A |
| Integrated Bootstrap Diode | Yes | No | Yes | Yes | No |
| Technology | SOI | Junction-isolated | SOI | SOI | Junction-isolated |
| Propagation Delay (typ.) | 200 ns | 220 ns | 200 ns | 180 ns | 220 ns |
Key Differentiators
- Integrated bootstrap diode eliminates one external HV diode (vs IR2304SPBF)
- SOI process tolerates negative VS transients (vs IR2304SPBF)
- Asymmetric source/sink drive (0.36 A / 0.7 A) (vs 2ED21064S06JXUMA1)
Design Notes
Estimated: At 100 kHz switching with Qg = 50 nC total gate charge, the 2ED2304S06FXUMA1 drives 0.36 A x 17 V average for turn-on, drawing 5 mA from VCC per switching cycle and roughly 0.5 W total from VCC at full duty cycle. Size the bootstrap capacitor with C_boot > Qg / (delta V_boot), typically 100 nF to 1 uF ceramic for Qg up to 100 nC. Confirm VCC decoupling with at least 1 uF X7R within 5 mm of pin 1.
Keep the gate-drive loop (HO-VS-HO_HC and LO-COM-LO_HC) area below 1 cm^2 to limit parasitic inductance; a high dV/dt half-bridge node can otherwise induce ringing above the driver's absolute maximum VS rating. Place the bootstrap capacitor CB between VB and VS with traces shorter than 5 mm, and return VS directly to the switch-node Kelvin source rather than power ground.
Do not float the high-side driver without initializing the bootstrap capacitor before applying the first switching pulse; failure to pre-charge CB through a startup pulse can leave the high-side unpowered and create shoot-through. Also note that the integrated BSD requires a minimum 1 uF bypass on VB; values below 100 nF can cause UVLO retriggering under load steps.
The PG-DSO-8-910 package has a typical theta_JA of 150 C/W on a 1-oz two-layer JEDEC EIA/JESD51 board. At 0.5 W dissipation (CCM half-bridge at 100 kHz, 0.5 A drive current), junction rise is approximately 75 C above ambient - well within the 150 C maximum. For continuous high-frequency operation, recommend a thermal via array under the exposed pad to spread heat.
Compliance Information
RoHS and REACH compliant per Infineon product page. Industrial grade only - not AEC-Q100 qualified for automotive. For automotive half-bridge drivers from Infineon, refer to the EiceDRIVER automotive family.
