IR2109SPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN: IR2109SPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.26 | $2.26 |
| 10 | $1.98 | $19.80 |
| 100 | $1.65 | $165.00 |
| 500 | $1.32 | $660.00 |
| 1,000 | $1.05 | $1,050.00 |
IR2109SPBF Overview
A half-bridge gate driver IC is a specialized power management semiconductor that translates low-power PWM logic signals from a microcontroller or DSP into the high-current gate-drive signals required to switch the high-side and low-side MOSFETs of a switching power stage. It sits hierarchically within the power management IC family, between gate driver ICs and the larger category of MOSFET/IGBT drivers, enabling reliable level shifting and bootstrap-based high-side drive.
Key features include a built-in bootstrap diode, dedicated low-side and high-side driver outputs with matched propagation delays, undervoltage lockout (UVLO) protection on VCC, and high noise immunity that prevents false triggering in industrial environments. The integrated dead-time control simplifies firmware and reduces external component count, making the IR2109SPBF well suited for compact motor-drive and SMPS designs.
Architecturally, the IR2109SPBF combines a level-shifter, latch, gate driver, and bootstrap diode in a single die, eliminating the need for an external bootstrap diode in most applications. The proprietary HVIC and latch-immune CMOS technologies allow the high-side channel to operate up to 600V while providing stable gate drive down to ground-referenced logic.
Typical applications include BLDC motor drives in fans, pumps, and e-bikes; half-bridge and full-bridge converters in switch-mode power supplies; class D audio amplifiers; induction-heating inverters; and uninterruptible power supplies (UPS) where robust, high-side floating drive is required.
When designing with the IR2109SPBF, place the bootstrap capacitor (typically 0.1uF to 1uF ceramic) as close as possible to pins Vb and Vs to minimize voltage ringing, and ensure VCC decoupling with at least a 0.1uF local bypass capacitor to suppress supply transients.
This page synthesizes distributor pricing, drop-in alternatives from the IR2109 family and competitive cross-references, and practical design notes not found in the manufacturer datasheet.
Drop-in alternatives for IR2109SPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IR2109SPBF (same form factor and footprint) — differing in Package, RoHS Status, Input Logic Compatibility, Undervoltage Lockout, Mounting Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRS2109SPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IR2304SPBF
✅ Drop-In✓ In Stock
$0.48 / Unit
View Datasheet →IR2109STRPBF
✅ Drop-In✓ In Stock
$0.61 / Unit
View Datasheet →IR2128SPBF
✅ Drop-In✓ In Stock
$1.62 / Unit
View Datasheet →IR2153PBF
✅ Drop-In✓ In Stock
$0.45 / Unit
View Datasheet →IRS21867STRPBF
✅ Drop-In✓ In Stock
$1.55 / Unit
View Datasheet →IR2109SPBF Maximum Ratings & Electrical Characteristics
| Driver Configuration | Half-Bridge |
| Number of Drivers | 2 (high-side + low-side) |
| High-Side Voltage Tolerance | 600 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Source Current (typical) | 0.2 A |
| Sink Current (typical) | 0.35 A |
| Turn-On Propagation Delay | 150 ns |
| Turn-Off Propagation Delay | 150 ns |
| Rise Time | 200 ns |
| Fall Time | 50 ns |
| Quiescent VCC Current | 1 mA |
| Input Logic Compatibility | 3.3 V / 5 V CMOS / TTL |
| Undervoltage Lockout | Yes (VCC) |
| Bootstrap Diode | Integrated |
| Operating Junction Temperature | -40 C to +150 C |
| Package | SOIC-8 |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
IR2109SPBF Pin Configuration
| Pin 1 | VCC — Logic and low-side driver supply (10V to 20V) |
| Pin 2 | IN — Logic input for high-side and low-side driver (non-inverting) |
| Pin 3 | SD — Shutdown input (logic low disables outputs) |
| Pin 4 | COM — Low-side driver return / ground |
| Pin 5 | LO — Low-side gate drive output |
| Pin 6 | VS — High-side floating supply return (switch node) |
| Pin 7 | HO — High-side gate drive output |
| Pin 8 | VB — High-side floating bootstrap supply |
Typical Applications
IR2109SPBF is suitable for 7 applications: BLDC Motor Drive, Switch-Mode Power Supply (SMPS), Class D Audio Amplifier, Induction Heating Inverter, Uninterruptible Power Supply (UPS), Solar Micro-Inverter, LED Lighting Driver.
BLDC Motor Drive
The IR2109SPBF is a strong fit for three-phase BLDC motor drive half-bridges because its 600V high-side floating supply accommodates 220V AC rectified buses up to roughly 400V DC. Each phase uses one IR2109SPBF to drive the high-side and low-side N-channel MOSFETs, and the integrated bootstrap diode eliminates an external component per phase. With 0.35A sink current it switches MOSFETs up to about 5A continuous load, and the 150ns matched propagation delay between channels keeps dead-time loss minimal in PWM-driven fans, pumps, e-bikes, and small industrial drives.
Recommended
Switch-Mode Power Supply (SMPS)
In half-bridge and full-bridge SMPS topologies the IR2109SPBF drives the primary-side MOSFETs from a logic-level PWM controller. Its 600V high-side tolerance suits 220V AC input designs, and the integrated dead-time control prevents shoot-through between the upper and lower switches. The 10V to 20V VCC range supports standard 12V or 15V bias rails derived from an auxiliary winding. Its 0.2A source current can drive MOSFETs at switching frequencies up to several hundred kHz for compact, high-density power converters.
Recommended
Class D Audio Amplifier
The IR2109SPBF drives the output half-bridge stage of a class D audio amplifier, switching the output MOSFETs at audio PWM frequencies between 200kHz and 500kHz. Its 600V tolerance supports high-power amplifier rails while the matched 150ns propagation delay between high-side and low-side channels preserves low total harmonic distortion. The integrated UVLO protects the output stage from low-supply bias during brown-out events, and the asymmetric 0.2A source / 0.35A sink current is well matched to typical audio MOSFET gate charge requirements.
Recommended
Induction Heating Inverter
For resonant induction-heating inverters, the IR2109SPBF drives the high-frequency half-bridge that excites the work coil through an LC tank. Its 600V high-side floating channel supports mains-rectified bus voltages up to 400V DC, and the 150ns propagation delay enables switching frequencies from 20kHz to 200kHz typical for cooking and industrial heaters. The integrated bootstrap diode simplifies PCB layout, and the SOIC-8 footprint allows compact thermal management in enclosed inverter modules.
Recommended
Uninterruptible Power Supply (UPS)
In online UPS systems the IR2109SPBF drives the half-bridge inverter stage that converts the battery DC bus into 220V AC mains-equivalent output. Its 600V high-side tolerance accommodates 192V DC battery stacks plus margin, and the undervoltage lockout prevents the inverter from operating below safe supply voltage. The matched propagation delay between channels minimizes transformer flux imbalance, and the SOIC-8 package supports automated assembly in volume UPS production lines.
Recommended
Solar Micro-Inverter
The IR2109SPBF is a strong fit for grid-tied solar micro-inverter half-bridge stages that operate from a 40V to 60V panel bus and step up to AC mains. Its 10V to 20V VCC range can be derived from the panel via an auxiliary supply, and the integrated bootstrap diode reduces BOM cost in cost-sensitive residential PV applications. The SOIC-8 package enables compact, sealed outdoor inverter enclosures while still providing 600V safety margin for the AC output stage.
Recommended
LED Lighting Driver
For high-power commercial LED drivers using bridgeless PFC plus half-bridge stages, the IR2109SPBF drives the resonant half-bridge that powers the isolated DC-DC converter. Its 600V high-side tolerance handles 400V PFC output, and the integrated dead-time control simplifies compliance with safety standards. With 0.35A sink current it switches MOSFETs that deliver 100W to 300W LED loads, and the -40C to +150C operating junction temperature supports outdoor luminaires in extreme climates.
Recommended
Recommended Products Summary
Engineering reference data for IR2109SPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2109SPBF | IR2304SPBF | IR2109STRPBF | IR2128SPBF | IR2153PBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | SOIC-8 | SOIC-8 (same) | SOIC-8 (same) | SOIC-8 (same) | SOIC-8 (same) | SOIC-8 (same) |
| High-Side Voltage | 600 V | 600 V | 600 V | 600 V | 500 V | 600 V |
| Source Current (typ.) | 0.2 A | 0.2 A | 0.2 A | 0.2 A | 0.3 A | 0.2 A |
| Sink Current (typ.) | 0.35 A | 0.35 A | 0.35 A | 0.35 A | 0.6 A | 0.35 A |
| Propagation Delay | 150 ns | 120 ns | 130 ns | 150 ns | 160 ns | 250 ns |
| Bootstrap Diode | Integrated | Integrated | Integrated | Integrated | External required | Integrated |
| Quiescent VCC Current | 1 mA | 1 mA | 0.5 mA | 1 mA | 1 mA | 1 mA |
| Operating Temperature | -40C to +150C | -40C to +150C | -40C to +150C | -40C to +150C | -40C to +150C | -40C to +125C |
Key Differentiators
- Integrated bootstrap diode simplifies BOM (vs IR2128SPBF)
- 600V high-side tolerance handles industrial mains (vs IR2104STRPBF)
- Tighter propagation delay than IR2153PBF (vs IR2153PBF)
- Higher sink current for fast turn-off (vs IRS21867STRPBF)
Design Notes
Estimated: VCC quiescent current is 1mA typical, so a low-dropout linear regulator or auxiliary winding supply should provide at least 5mA per IR2109SPBF to cover gate-charge currents plus quiescent draw. Place a 10uF bulk plus 0.1uF ceramic bypass directly at VCC (pin 1) to COM (pin 4). VCC must remain between 10V and 20V at all times to avoid UVLO shutdown or device stress.
Place the bootstrap capacitor (typically 0.1uF to 1uF X7R ceramic rated 25V or higher) directly between VB (pin 8) and VS (pin 6) with traces as short as possible. The bootstrap diode is internal, but its forward voltage and recovery time demand a high-quality low-ESR ceramic. Keep the high-voltage switching node (VS) trace away from the low-voltage logic input pins (IN, SD) to prevent dv/dt noise injection that can cause false triggering.
Estimated: The IR2109SPBF dissipates power primarily through the low-side gate driver during switching. At 100kHz with a 50nC total gate charge MOSFET, gate-drive loss is approximately 100kHz x 50nC x 15V = 75mW per channel. The SOIC-8 has theta_JA around 80C/W, yielding a 6C junction temperature rise above ambient at this load. At higher switching frequencies or with larger MOSFETs, attach the exposed pad (if present) or copper pour to keep the junction below 125C in industrial environments.
Do not exceed 600V between VS and COM. Floating the high-side supply without a populated bootstrap capacitor causes the HO output to remain low and the upper MOSFET stays off - a frequent mistake during bring-up. Always include a pull-down resistor (typically 10k to 100k) on SD if shutdown functionality is not used, to avoid floating-shutdown noise. Verify IN and SD logic thresholds against your 3.3V or 5V controller levels at the IC pins, accounting for any level-shifters in the path.
Compliance Information
RoHS compliant per JLCPCB and LCSC distributor listings. Halogen-free status not explicitly stated in retrieved data; flagged as unknown. Not AEC-Q100 qualified - choose automotive-grade gate drivers for vehicle applications.
