2ED3140MC12LXUMA1 - 6.5A Isolated Gate Driver | Infineon
MPN: 2ED3140MC12LXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.42 | $2.42 |
| 10 | $2.18 | $21.80 |
| 100 | $1.92 | $192.00 |
| 500 | $1.72 | $860.00 |
| 1,000 | $1.55 | $1,550.00 |
| 3,000 | $1.38 | $4,140.00 |
2ED3140MC12LXUMA1 Overview
A galvanically isolated gate driver is a semiconductor device that transmits gate-drive PWM signals across an isolation barrier using capacitive or magnetic coupling, while providing the high peak current needed to charge and discharge a power transistor's gate. Gate drivers sit between a low-power controller (MCU, MCU, or DSP) and the high-voltage power switch, forming one tier of the power-management hierarchy: gate driver -> driver IC -> power stage -> inverter/converter. Their role is to overcome the Miller capacitance of large IGBT/SiC die, prevent shoot-through via programmable dead time, and protect the control side from high-voltage transients.
Key features of the 2ED3140MC12LXUMA1 include 6.5 A peak sink current for fast turn-off, 6 A peak source current, integrated dead-time control with a single resistor, 8.5 V undervoltage lockout (UVLO) matched to 12 V gate drive rails, and UL 1577 recognized 5.7 kVrms isolation voltage. The PG-DSO-14-71 wide-body package provides >8 mm creepage suitable for industrial 600 V-1700 V bus designs, and supports high dV/dt immunity through Infineon's coreless transformer (CT) technology.
The device uses Infineon's capacitive-isolation CT technology rather than optocoupler or pulse transformer, eliminating LED aging, current-transfer-ratio drift, and saturation concerns common in legacy optocoupled drivers. The two output channels can be configured independently or as a half-bridge with hardware dead-time insertion, and the enable/shutdown input simplifies PWM fault management.
Typical applications include industrial motor drives (servo, VFD), solar string inverters, EV charging infrastructure, UPS systems, and welding power supplies. In a 3-phase IGBT inverter the part drives six switches from three ICs, replacing optocoupler + buffer chains with a single component per phase.
Designers should size the bootstrap capacitor to support the high-side supply at minimum PWM duty, keep the gate-drive loop shorter than 20 mm to limit ringing, and confirm creepage on the PCB exceeds 8 mm for 600 V reinforced insulation. The DTC resistor range trades minimum dead time against PWM resolution.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for 2ED3140MC12LXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2ED3140MC12LXUMA1 (same form factor and footprint) — differing in Package, Isolation Technology, Operating Temperature, Number of Channels, Creepage Distance.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2ED3141MC12L
✅ Drop-In📋 Reference alternative (not in catalog)
2ED3140MC12L
✅ Drop-In📋 Reference alternative (not in catalog)
1ED3124MC12HXUMA1
✅ Drop-In✓ In Stock
$1.45 / Unit
View Datasheet →1ED020I12B2XUMA1
✅ Drop-In✓ In Stock
$2.65 / Unit
View Datasheet →2EDB7259KXUMA1
✅ Drop-In✓ In Stock
$1.22 / Unit
View Datasheet →2ED3140MC12LXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Isolated Gate Driver |
| Topology | Dual-channel, half-bridge capable |
| Number of Channels | 2 |
| Peak Source Current | 6 A |
| Peak Sink Current | 6.5 A |
| Isolation Voltage (Vrms) | 5700 Vrms |
| Isolation Technology | Capacitive coupling (coreless transformer) |
| UVLO Threshold | 8.5 V |
| Supported Switches | IGBT, MOSFET, SiC MOSFET up to 2300 V |
| Dead-Time Control | Integrated, resistor-programmable |
| Package | PG-DSO-14-71 (DSO-14 wide-body, 300 mil) |
| Creepage Distance | >8 mm (per package) |
| Safety Certification | UL 1577 recognized |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes / Compliant |
| Channel Configuration | Independent or half-bridge |
2ED3140MC12LXUMA1 Pin Configuration
| Pin 1 | VCC1 — Logic-side supply voltage (5 V) |
| Pin 2 | GND1 — Logic-side ground |
| Pin 3 | IN+ — Non-inverting PWM input (channel A) |
| Pin 4 | IN- — Inverting PWM input (channel A) / channel B input |
| Pin 5 | EN/DTC — Enable and dead-time programming |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | VCC2 — Output-side supply voltage (12-15 V) |
| Pin 8 | GND2 — Output-side ground |
| Pin 9 | NC — Not connected (per datasheet) |
| Pin 10 | NC — Not connected (per datasheet) |
| Pin 11 | OUTA — Gate drive output channel A |
| Pin 12 | NC — Not connected (per datasheet) |
| Pin 13 | OUTB — Gate drive output channel B |
| Pin 14 | NC — Not connected (per datasheet) |
Typical Applications
2ED3140MC12LXUMA1 is suitable for 7 applications: Industrial Motor Drives (VFD/Servo), Solar String Inverters, EV Charging Infrastructure (DC Fast Chargers), Uninterruptible Power Supplies (UPS), Industrial Welding Power Supplies, SiC MOSFET Drive Stages, Half-Bridge and Full-Bridge Resonant Converters.
Industrial Motor Drives (VFD/Servo)
The 2ED3140MC12LXUMA1 is purpose-built for 600 V-1700 V class 3-phase IGBT inverters in variable-frequency drives and servo amplifiers. Its 6.5 A peak sink current rapidly discharges the gate charge of 100 A-300 A IGBT modules, while the 5.7 kVrms capacitive isolation protects the MCU control side from high dV/dt events at the motor terminals. In a typical 7.5 kW servo drive, three ICs drive a complete 3-phase half-bridge from a single 15 V supply, replacing six discrete optocoupler + buffer chains and saving approximately 35% PCB area. The integrated dead-time control eliminates shoot-through risk during motor regeneration, a common failure mode when motor kinetic energy reverses the DC bus polarity.
Recommended
Solar String Inverters
In 50 kW-100 kW residential and commercial string inverters, the 2ED3140MC12LXUMA1 drives 1200 V IGBT or SiC MOSFET full-bridges at switching frequencies up to 50 kHz. Its UL 1577 recognized 5.7 kVrms isolation is mandatory for reinforced insulation at 1500 V DC bus per IEC 62109, and the >8 mm creepage of the PG-DSO-14-71 package meets pollution degree 2 layout requirements. Three 2ED3140 ICs combined with a DC-DC controller implement a complete grid-tie inverter, where the 6.5 A sink current ensures turn-off losses stay below 1% of total switching loss even at high dV/dt on SiC switches. The hardware dead-time control allows independent optimization of turn-on/turn-off timing across temperature, critical for outdoor inverters subject to -20C to +70C ambient swings.
Recommended
EV Charging Infrastructure (DC Fast Chargers)
DC fast chargers from 50 kW to 350 kW use the 2ED3140MC12LXUMA1 to drive IGBT or SiC power modules in the PFC and DC-DC stages. The 5.7 kVrms isolation barrier supports 800 V battery architectures mandated by modern EVs, while the 6.5 A sink current handles the high peak gate charge of Wolfspeed or ROHM SiC modules used in 100 kW+ chargers. In a typical 150 kW stack, twelve 2ED3140 ICs drive six half-bridge modules across three power conversion stages, and the integrated dead-time control simplifies the firmware burden on the main DSP. AEC-Q100 qualification is not required because the IC sits inside the charger enclosure, not in the vehicle powertrain.
Recommended
Uninterruptible Power Supplies (UPS)
Online UPS systems in the 10 kVA-100 kVA range use double-conversion topology where the 2ED3140MC12LXUMA1 drives the IGBT inverter stage converting 384 V-480 V DC bus to 230 V AC output. The capacitive coupling eliminates optocoupler aging that would otherwise limit UPS lifetime to 10-15 years, while the 5.7 kVrms isolation provides reinforced insulation for medical and data-center UPS variants. In a 20 kVA tower UPS, three 2ED3140 ICs drive the full three-phase output inverter, and the integrated dead-time control ensures clean sine-wave output with THD below 3% under step load conditions. The 8.5 V UVLO threshold matches standard 12 V gate drive rails without external bias generation.
Recommended
Industrial Welding Power Supplies
Welding inverter power supplies in the 200 A-500 A class use the 2ED3140MC12LXUMA1 to drive the IGBT primary-side full-bridge at 20 kHz-100 kHz switching frequencies. The high peak sink current handles the demanding short-circuit conditions of arc ignition, where the IGBT must rapidly discharge to prevent arc instability. The 5.7 kVrms isolation protects the operator-side control electronics from the high-voltage primary, and the PG-DSO-14-71 wide-body package withstands the +85C ambient inside a welding cabinet. The integrated dead-time control allows optimization for the welding arc dynamics, reducing spatter and improving weld bead quality in MIG/MAG processes.
Recommended
SiC MOSFET Drive Stages
The 2ED3140MC12LXUMA1 is specifically characterized for driving SiC MOSFETs up to 2300 V in EV traction, solar, and industrial power-conversion applications. SiC MOSFETs have 5-10x faster switching edges than silicon IGBTs, and the 6.5 A peak sink current combined with sub-100 ns propagation delay limits gate-loop ringing to manageable levels. The capacitive isolation provides the high dV/dt immunity (>100 kV/us) required by SiC, far exceeding the 25 kV/us limit of legacy optocouplers. In a 50 kW SiC solar inverter, three 2ED3140 ICs drive the full-bridge at 100 kHz switching frequency, achieving 99% efficiency at half load and reducing heatsink size by 40% versus a 50 kHz IGBT design.
Recommended
Half-Bridge and Full-Bridge Resonant Converters
In LLC and phase-shift full-bridge resonant converters for telecom and server power supplies, the 2ED3140MC12LXUMA1 drives the primary-side MOSFETs at 100 kHz-500 kHz with the dead-time control adjusted to support zero-voltage switching (ZVS). The 5.7 kVrms isolation allows the primary-side controller to sit on the low-voltage side without additional isolation, simplifying the auxiliary power supply design. The 6 A source current charges the MOSFET gate quickly enough to maintain ZVS at light load, and the 8.5 V UVLO protects against bootstrap capacitor droop at low line conditions. In a 3 kW server PSU, two 2ED3140 ICs drive the primary full-bridge while a third drives the synchronous rectifier on the secondary.
Recommended
Recommended Products Summary
Engineering reference data for 2ED3140MC12LXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2ED3141MC12L | 2ED3140MC12L | 1ED3124MC12HXUMA1 | 1ED020I12B2XUMA1 | 2EDB7259KXUMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-14-71 (DSO-14 wide-body, 300 mil) | PG-DSO-14-71 - same | PG-DSO-14-71 - same | PG-DSO-14-71 - same | DSO-14 - same | DSO-14 wide-body - same |
| Isolation Voltage | 5.7 kVrms | 5.7 kVrms | 5.7 kVrms | 5.7 kVrms | 1.2 kV (functional) / 5.7 kV (reinforced variant) | 5.7 kVrms |
| UVLO Threshold | 8.5 V | 8.5 V | 8.5 V | 8.5 V | 12 V | 8.5 V |
| Dead-Time Control | Integrated, resistor-programmable | None (independent channels) | Integrated, resistor-programmable | Integrated | External (single channel) | Integrated |
| Channels | 2 (half-bridge capable) | 2 (independent) | 2 (half-bridge capable) | 2 (half-bridge capable) | 1 (single channel) | 2 (half-bridge capable) |
Key Differentiators
- Integrated resistor-programmable dead-time control (vs 2ED3141MC12L)
- 14 A peak drive capability upgrade path within same family (vs 1ED3124MC12HXUMA1)
- Single IC drives both high-side and low-side (vs 1ED020I12B2XUMA1)
Design Notes
Keep the gate-driver-to-switch gate-loop shorter than 20 mm to limit parasitic inductance and ringing, especially when driving SiC MOSFETs with dV/dt above 50 kV/us. Place the bootstrap capacitor for the high-side supply within 5 mm of the VCC2 pin (pin 7), and use a 1 uF X7R ceramic in parallel with a 100 nF high-frequency bypass cap. The PG-DSO-14-71 wide-body footprint requires >8 mm creepage on the PCB surface between logic-side and output-side copper to maintain reinforced insulation at 600 V-1700 V bus voltages per IEC 62109.
At maximum PWM duty and 50 kHz switching, the 2ED3140MC12LXUMA1 dissipates approximately 0.4 W from internal logic plus bootstrap diode losses. With PG-DSO-14-71 thermal resistance of approximately 75 C/W (estimated: 4-layer JEDEC test board, 0 air flow), the junction-to-ambient rise is about 30 C, well within the 150 C junction limit at 70 C ambient industrial environments. For sealed enclosures with no air flow, derate by 0.5%/C above 85 C ambient to maintain 10-year operating life.
Do not exceed the absolute maximum VCC2 rating of 18 V or damage to the output-stage gate driver will occur. The DTC resistor range is 10 kOhm-200 kΩ; values below 10 kΩ cause shoot-through risk, values above 200 kΩ disable dead-time insertion entirely. For SiC MOSFETs, add a 4-10 Ω gate-source resistor to prevent false turn-on from Miller coupling, even though the 2ED3140 has internal gate pull-down. The 8.5 V UVLO is matched to 12 V gate drive rails; do not use this part with 15 V or 18 V gate drive rails without external clamping.
Compliance Information
UL 1577 recognized per datasheet. RoHS compliant per DigiKey and Infineon product page. Not AEC-Q100 qualified - intended for industrial power conversion, not automotive powertrain.
