2EDB9259YXUMA1 vs 1ED3124MC12HXUMA1 Comparison
Detailed side-by-side comparison of 2EDB9259YXUMA1 by Infineon and 1ED3124MC12HXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDB9259YXUMA1
2EDB9259YXUMA1 - Dual Isolated Gate Driver 5A/9A | Infineon
2EDB9259YXUMA1 β ActiveInfineon
1ED3124MC12HXUMA1 - 14A Isolated Gate Driver, 5.7kV | Infineon
1ED3124MC12HXUMA1 β ActiveSpecification Comparison
| Parameter | 2EDB9259YXUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.46 | $1.45 |
| Product Type | Isolated gate driver IC | β |
| Number of Channels | 2 (dual) | β |
| Topology Support | Half-bridge / High-side + Low-side | β |
| Peak Source Current | 5 A | 13.5 A |
| Peak Sink Current | 9 A | 14 A |
| Isolation Voltage (Vrms) | 3000 Vrms | β |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns | β |
| Propagation Delay (typ) | 38 ns | β |
| Channel-to-Channel Delay Matching | [DATA_NEEDED: delay matching spec] | β |
| VCC Operating Range | 4.5 V to 18 V | β |
| VCC Absolute Maximum | 36 V | β |
| Bootstrap Diode | Integrated | β |
| Undervoltage Lockout (UVLO) | Yes (VCC and VBS) | β |
| Package | PG-DSO-14 (150 mil DSO wide-body) | PG-DSO-8 (DSO-8) |
| Package Pin Count | 14 | β |
| Operating Temperature Range | -40C to +125C | β |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | β |
| Channel Type | β | Single-channel |
| Configuration | β | High-side / Low-side (non-inverting) |
| Number of Drivers | β | 1 |
| Number of Outputs | β | 1 |
| Isolation Technology | β | Magnetic coupling (coreless transformer) |
| Isolation Voltage (RMS) | β | 5.7 kV |
| Transient Overvoltage | β | 8000 Vpk |
| Supply Voltage (VCC2) | β | 10.5 V to 35 V |
| Supply Current (Max) | β | 1.1 mA |
| Propagation Delay (Typ) | β | 90 ns |
| Rise Time | β | 15 ns |
| Fall Time | β | 30 ns |
| Operating Temperature | β | -40 C to +125 C |
| Protections | β | UVLO, Short-Circuit (DESAT) |
| Target Devices | β | IGBT, SiC MOSFET |