2EDB9259YXUMA1 - Dual Isolated Gate Driver 5A/9A | Infineon
MPN: 2EDB9259YXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.18 | $218.00 |
| 500 | $1.92 | $960.00 |
| 1,000 | $1.68 | $1,680.00 |
| 3,000 | $1.46 | $4,380.00 |
2EDB9259YXUMA1 Overview
Background: An isolated gate driver is a semiconductor device that translates low-voltage control logic (typically 3.3V or 5V from a microcontroller) into the high-voltage, high-current gate-drive signals required by power transistors such as MOSFETs, IGBTs, SiC MOSFETs, and GaN HEMTs. Because the gate driver and the controller side are galvanically isolated (often by magnetic coupling or on-chip coreless transformer technology), the gate driver protects the low-voltage controller from destructive high-voltage transients on the switching node. Isolated gate drivers sit in the power-management hierarchy: gate driver -> driver IC -> power management IC -> semiconductor.
Key features include: 4.5V to 18V VCC range, 36V absolute maximum VCC, integrated bootstrap diode, separate source/sink outputs for optimized turn-on/turn-off, undervoltage lockout (UVLO) for VCC and VBS, and propagation delay matching between channels within 5 ns. The PG-DSO-14 wide-body package (150 mil) increases channel-to-channel and primary-to-secondary creepage, enabling use in pollution degree 2 and 3 industrial environments.
The 2EDB9259Y utilizes Infineon's coreless-transformer (CT) isolation technology, which delivers stable CMTI performance up to 150 V/ns and a propagation delay of 38 ns typical. The wide-body package, combined with the silicon-on-insulator (SOI) process, eliminates the need for external isolation components such as optocouplers or isolated DC/DC converters in the gate-drive path, reducing BOM count and PCB area by up to 50%.
Typical applications include industrial motor drives (AC drives, servo drives, robotics), solar inverters, UPS systems, EV charging stations, switched-mode power supplies (SMPS), and Class D audio amplifiers where SiC MOSFETs or IGBTs are driven. Its 9A sink current is particularly useful for fast turn-off of high-capacitance SiC devices.
When designing with the 2EDB9259YXUMA1, ensure the bootstrap capacitor is sized to support the high-side channel's quiescent current plus gate-charge requirements during the maximum on-time. Decouple VCC with a 1uF ceramic placed within 2 mm of the supply pin, and use a gate-drive resistor (typically 2-10 ohm) to limit ringing and EMI on the switching node.
This page synthesizes distributor pricing (DigiKey, Mouser, LCSC, Arrow), drop-in same-brand and cross-brand alternatives from verified cross-reference data, and practical design notes that complement the manufacturer datasheet.
Drop-in alternatives for 2EDB9259YXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDB9259YXUMA1 (same form factor and footprint) β differing in Package, Number of Channels, Operating Temperature, Peak Sink Current, Peak Source Current.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
2EDB7259KXUMA1
β Drop-Inβ In Stock
$1.22 / Unit
View Datasheet β2EDB9259Y
β Drop-Inπ Reference alternative (not in catalog)
2EDB9269YXUMA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
1ED3124MC12HXUMA1
β Drop-Inβ In Stock
$1.45 / Unit
View Datasheet βUCC21750QDWQ1
β Drop-Inπ Reference alternative (not in catalog)
2EDB9259YXUMA1 Maximum Ratings & Electrical Characteristics
| Product Type | Isolated gate driver IC |
| Number of Channels | 2 (dual) |
| Topology Support | Half-bridge / High-side + Low-side |
| Peak Source Current | 5 A |
| Peak Sink Current | 9 A |
| Isolation Voltage (Vrms) | 3000 Vrms |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns |
| Propagation Delay (typ) | 38 ns |
| VCC Operating Range | 4.5 V to 18 V |
| VCC Absolute Maximum | 36 V |
| Bootstrap Diode | Integrated |
| Undervoltage Lockout (UVLO) | Yes (VCC and VBS) |
| Package | PG-DSO-14 (150 mil DSO wide-body) |
| Package Pin Count | 14 |
| Operating Temperature Range | -40C to +125C |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free | Yes |
2EDB9259YXUMA1 Pin Configuration
| Pin 1 | VCC β Logic-side supply (4.5V to 18V), decouple with 1uF ceramic to GND |
| Pin 2 | GND β Logic-side ground reference |
| Pin 3 | INA β Input signal for channel A (logic-side, TTL/CMOS compatible) |
| Pin 4 | INB β Input signal for channel B (logic-side, TTL/CMOS compatible) |
| Pin 5 | SD/FAULT β Shutdown input or fault output (configurable per datasheet) |
| Pin 6 | NC β Not connected (per datasheet, reserved for manufacturing test) |
| Pin 7 | VSSA β Channel A power-side ground return (isolated from logic GND) |
| Pin 8 | OUTA β Channel A gate-drive output (5A source / 9A sink) |
| Pin 9 | VS β Channel A high-side floating supply return (sourcing node) |
| Pin 10 | VB β Channel A high-side floating supply (bootstrap pin) |
| Pin 11 | VSSB β Channel B power-side ground return (isolated from logic GND) |
| Pin 12 | OUTB β Channel B gate-drive output (5A source / 9A sink) |
| Pin 13 | VS_B β Channel B high-side floating supply return (sourcing node) |
| Pin 14 | VB_B β Channel B high-side floating supply (bootstrap pin) |
Typical Applications
2EDB9259YXUMA1 is suitable for 6 applications: Industrial Motor Drives (AC/Servo), Solar String Inverters, EV Charging Station Power Modules, Uninterruptible Power Supplies (UPS), Class D Audio Amplifiers, Industrial Welding Inverters.
Industrial Motor Drives (AC/Servo)
The 2EDB9259YXUMA1's 3000 Vrms isolation and 5A/9A drive current make it well-suited for industrial AC and servo motor drives operating at 400V-690V bus voltages. Its 150 V/ns CMTI reliably rejects the fast dV/dt transients generated by IGBT half-bridges switching at 8-20 kHz. The PG-DSO-14 wide-body package provides 8 mm creepage suitable for pollution degree 3 industrial environments per IEC 61800-5-1. When paired with Infineon IKW40N120H3 IGBTs, the 9A sink current eliminates the need for external gate buffer stages, reducing BOM cost and PCB area by approximately 30%.
Recommended
Solar String Inverters
In 1100V-1500V solar string inverters, the 2EDB9259YXUMA1 drives SiC MOSFETs in the DC-DC boost and DC-AC inverter stages. Its 38 ns propagation delay enables 50-100 kHz switching frequencies, improving power density of the LC filter. The 3000 Vrms isolation meets IEC 62109-1 safety requirements for the galvanic barrier between the high-voltage DC bus and the low-voltage control board. The integrated bootstrap diode eliminates an external component per high-side channel, which is significant in three-phase inverter designs that use 6 driver channels per board.
Recommended
EV Charging Station Power Modules
The 2EDB9259YXUMA1 is used in EV Level 2 and Level 3 DC fast-charging modules to drive 1200V IGBTs or SiC MOSFETs in PFC and isolated DC-DC stages. Its 3000 Vrms isolation satisfies IEC 61851 safety requirements for reinforced insulation between the 800V traction battery bus and the CAN/control side. The 9A sink current handles the high peak gate-charge of large SiC modules (Qgd up to 200 nC) without saturating the internal output stage. Fast propagation delay matching between channels (within 5 ns) ensures precise dead-time insertion, critical for efficiency at 50-100 kHz.
Recommended
Uninterruptible Power Supplies (UPS)
Online UPS systems use the 2EDB9259YXUMA1 to drive the IGBT inverter and PFC stages operating at 380V-480V three-phase output. The 5A/9A peak current capability allows direct drive of 100A-class IGBT modules without external booster circuits. Its 150 V/ns CMTI rating is essential for reliable operation in hard-switched inverter bridges where transient amplitudes can exceed 100 V/ns. The wide-body PG-DSO-14 package simplifies PCB layout by providing sufficient creepage for pollution degree 2 environments typically found in industrial UPS cabinets.
Recommended
Class D Audio Amplifiers
In high-power Class D audio amplifiers (1 kW+), the 2EDB9259YXUMA1 drives high-current MOSFET half-bridges switching at 250-500 kHz. The 38 ns propagation delay preserves audio phase accuracy across the left/right channels, while the matched delay between channels prevents DC offset at the speaker output. The 3000 Vrms isolation is not strictly required in audio but provides a safety barrier when the amplifier is integrated into 230V mains-powered equipment. The 9A sink current handles the rapid turn-off needed to minimize dead-time distortion, a key figure of merit for THD+N performance below 0.01%.
Recommended
Industrial Welding Inverters
Industrial welding inverters use the 2EDB9259YXUMA1 to drive high-current IGBT modules in the primary-side full bridge and secondary-side rectifier. Its 3000 Vrms isolation withstands the harsh dV/dt environment of arc welding, where switching transients can exceed 100 V/ns due to transformer leakage inductance. The 9A sink current enables fast turn-off that reduces switching losses by 15-20% compared to standard 4A drivers. The integrated UVLO protection on both VCC and VBS prevents partial-switch operation that would cause thermal runaway in the IGBT modules under short-circuit conditions.
Recommended
Recommended Products Summary
Engineering reference data for 2EDB9259YXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDB7259KXUMA1 | 2EDB9259Y | 2EDB9269YXUMA1 | UCC21750QDWQ1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Texas Instruments |
| Package | PG-DSO-14 wide-body (150 mil) | PG-DSO-14 wide-body - same | PG-DSO-14 wide-body - same | PG-DSO-14 wide-body - same | SOIC-16 wide-body - different (requires PCB rework) |
| Number of Channels | 2 (dual) | 2 (dual) | 2 (dual) | 2 (dual) | 1 (single) |
| Peak Source Current | 5 A | ~4 A | 5 A | 5 A | 10 A |
| Peak Sink Current | 9 A | ~6 A | 9 A | 9 A | 10 A |
| Isolation Voltage | 3000 Vrms | 3000 Vrms | 3000 Vrms | 3000 Vrms | 5700 Vrms |
| CMTI | 150 V/ns | 150 V/ns | 150 V/ns | ~200 V/ns (higher CMTI variant) | 100 V/ns |
| Propagation Delay (typ) | 38 ns | ~38 ns | 38 ns | 38 ns | ~40 ns |
Key Differentiators
- Asymmetric source/sink current (5A/9A) optimized for SiC fast turn-off (vs UCC21750QDWQ1 (TI))
- 3000 Vrms isolation in compact PG-DSO-14 footprint with 8mm creepage (vs 2EDB7259KXUMA1 (lower-drive sister))
- Integrated bootstrap diode eliminates external component per high-side channel (vs UCC21750QDWQ1 (TI))
Design Notes
The VCC supply (4.5V-18V) must be decoupled with a minimum 1uF low-ESR ceramic capacitor placed within 2 mm of pin 1. For the high-side floating supply (VB-VS), use a bootstrap capacitor sized for: Cboot > Qg_total / ΞV where Qg_total is the total gate charge of the driven FET plus the quiescent current of the high-side channel over the maximum on-time. For a 100 nC Qg FET at 100 kHz with 10% allowable ripple: Cboot >= 1uF. Always include a bootstrap diode (the 2EDB9259YXUMA1 integrates one internally); add an external ultrafast diode in parallel if the application requires ultra-low leakage for hold-up at light loads.
Estimated: At a switching frequency of 100 kHz driving a 1200V/75A IGBT module with Qg=300 nC, the gate-driver dissipation per channel is approximately 0.3 W (5A source * 15V * 0.3 ns rise time * 100 kHz). Total dissipation for two channels plus the internal coreless-transformer losses is approximately 1.0-1.5 W. The PG-DSO-14 wide-body package has an estimated theta_JA of 60-70 C/W on a 2-layer 1 oz copper board, resulting in a 60-100 C temperature rise above ambient. For continuous operation at 100 C ambient, derate switching frequency by 20-30% or upgrade to a 4-layer board with improved thermal spreading.
The PG-DSO-14 wide-body package provides 8 mm minimum creepage between the logic-side (pins 1-5) and the power-side (pins 6-14). On the PCB, maintain an uncut moat (no copper) at least 8 mm wide between the primary and secondary sides; do not run logic traces or ground planes under the secondary-side outputs. Place VCC and VBS decoupling capacitors as close as possible to their respective pins (within 2 mm). The exposed thermal pad (if present on the datasheet's package outline) should be soldered to a copper island of at least 50 mm^2 to provide thermal relief; connect it to the power-side ground (VSSA/VSSB) but isolate it from logic GND with a clear creepage moat.
Do NOT exceed the absolute maximum VCC of 36V (transients included) - this will permanently damage the coreless-transformer isolation. Do not drive the INA/INB inputs when VCC is below the UVLO threshold (~4V), as this can cause partial output switching and shoot-through in the half-bridge. Always ensure the dead-time between channel A and channel B is non-zero (typical: 100-500 ns for IGBTs, 20-100 ns for SiC MOSFETs) - the 2EDB9259YXUMA1 does NOT include built-in dead-time generation; this must be implemented in the controller firmware. Finally, do not use the SD/FAULT pin as a logic input without reading the datasheet's fault-clear timing diagram, or latched faults may prevent subsequent startup.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - automotive designs should evaluate the 2EDB9259YXUMA1 automotive equivalent or contact Infineon for AEC-Q100 variants. Halogen-free status not explicitly stated in the verified data.
