2EDF9275FXUMA1 vs 1EDN7116GXTMA1 Comparison
Detailed side-by-side comparison of 2EDF9275FXUMA1 by Infineon and 1EDN7116GXTMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
2EDF9275FXUMA1
2EDF9275FXUMA1 - 4A/8A Isolated Gate Driver | Infineon
2EDF9275FXUMA1 β ActiveInfineon
1EDN7116GXTMA1
1EDN7116GXTMA1 - 200V Single-Channel GaN Gate Driver IC | Infineon
1EDN7116GXTMA1 β ActiveSpecification Comparison
| Parameter | 2EDF9275FXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.74 | $0.84 |
| Driver Configuration | Half-Bridge (High Side + Low Side) | Non-inverting, single low-side |
| Number of Drivers | 2 | 1 |
| Number of Outputs | 2 | β |
| Source Current | 4 A | β |
| Sink Current | 8 A | β |
| Propagation Delay (Typ.) | 37 ns | β |
| Channel-to-Channel Matching | [DATA_NEEDED: channel-to-channel matching] | β |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns | β |
| Isolation Type | Functional (Galvanic, Coreless Transformer) | β |
| Input Logic Compatibility | CMOS / TTL (Non-Inverting) | β |
| Supply Voltage Range | [DATA_NEEDED: VCC range] | β |
| Operating Temperature Range | -40 Β°C to +125 Β°C | -40 Β°C to +125 Β°C |
| Rise Time | [DATA_NEEDED: rise time] | β |
| Fall Time | 4.5 ns | β |
| Mounting Style | SMD/SMT | β |
| Package | PG-DSO-16-11 (150-mil DSO-16) | PG-VSON-10-4 (3.0 mm Γ 3.0 mm) |
| Packaging | Cut Tape, MouseReel, Reel | β |
| Optimized For | CoolSiCβ’ MOSFETs (Wide-Bandgap) | β |
| RoHS Status | Compliant | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | β |
| Function | β | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Peak Source Current | β | 2 A (typ) |
| Peak Sink Current | β | 4 A (typ) |
| Input Type | β | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | β | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | β | 200 V (max) |
| Propagation Delay (Typ) | β | 9 ns |
| Rise Time (Typ) | β | 3 ns |
| Fall Time (Typ) | β | 3 ns |
| Quiescent Current (Typ) | β | 0.6 mA |
| Miller Clamp | β | Integrated, active |
| UVLO | β | Yes (VCC and gate-rail monitored) |
| Mounting Type | β | Surface Mount |
| MSL Level | β | MSL3 |
| Target Switch Technology | β | GaN HEMT (CoolGaN) or Si MOSFET |