2EDF9275FXUMA1 - 4A/8A Isolated Gate Driver | Infineon
MPN: 2EDF9275FXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.06 | $1.06 |
| 10 | $1.04 | $10.40 |
| 100 | $0.96 | $96.00 |
| 500 | $0.85 | $425.00 |
| 1,000 | $0.74 | $740.00 |
2EDF9275FXUMA1 Overview
A gate driver is an IC that sits between a low-power control signal (from a microcontroller or PWM controller) and a power MOSFET/IGBT gate, providing the high peak current and voltage swing needed to switch the power device quickly and efficiently. In the power-converter hierarchy, isolated gate drivers form the critical interface between the secondary-side control logic and the primary-side high-voltage switching node, providing galvanic isolation (functional in the 2EDF9275F, reinforced in the 2EDF9275F variant family) for safety and ground-loop elimination.
Key features include independent high-side and low-side output channels with built-in shoot-through protection, ±1 ns channel-to-channel matching, and a wide supply range that supports unipolar and bipolar gate-drive schemes. The driver accepts CMOS/TTL logic inputs and is specified for operation from -40 °C to +125 °C, making it suitable for industrial, telecom, and renewable-energy power stages.
The 2EDF9275FXUMA1 architecture combines Infineon's proven Coreless Transformer (CLT) isolation technology with an on-chip low-voltage regulator, eliminating the need for an external bootstrap diode for the low-side channel in many topologies. Internal dead-time control and matched propagation delays ensure predictable switching behavior across the full temperature range, which is essential for high-frequency hard-switched and resonant converters.
Typical applications include half-bridge and full-bridge power converters for telecom rectifiers, server and datacom power supplies, solar inverters, EV onboard chargers, and industrial motor drives. The CoolSiC™-optimized drive strength allows direct connection to 1200 V SiC MOSFETs without external gate resistors in many configurations. Designers should review the datasheet section on bootstrap capacitor sizing for high-side channel operation and confirm CMTI headroom against the application's dv/dt profile.
Drop-in alternatives for 2EDF9275FXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 2EDF9275FXUMA1 (same form factor and footprint) — differing in Package, Number of Channels, Function, MSL Level, Operating Temperature.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
2EDF9275F
✅ Drop-In📋 Reference alternative (not in catalog)
1EDN7116GXTMA1
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View Datasheet →2EDN7534RXTMA1
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View Datasheet →1ED020I12B2XUMA1
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View Datasheet →2EDB7259KXUMA1
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View Datasheet →2EDF9275FXUMA1 Maximum Ratings & Electrical Characteristics
| Driver Configuration | Half-Bridge (High Side + Low Side) |
| Number of Drivers | 2 |
| Number of Outputs | 2 |
| Source Current | 4 A |
| Sink Current | 8 A |
| Propagation Delay (Typ.) | 37 ns |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns |
| Isolation Type | Functional (Galvanic, Coreless Transformer) |
| Input Logic Compatibility | CMOS / TTL (Non-Inverting) |
| Operating Temperature Range | -40 °C to +125 °C |
| Fall Time | 4.5 ns |
| Mounting Style | SMD/SMT |
| Package | PG-DSO-16-11 (150-mil DSO-16) |
| Packaging | Cut Tape, MouseReel, Reel |
| Optimized For | CoolSiC™ MOSFETs (Wide-Bandgap) |
| RoHS Status | Compliant |
2EDF9275FXUMA1 Pin Configuration
| Pin 1 | VDD1 — Primary-side supply voltage |
| Pin 2 | GND1 — Primary-side ground |
| Pin 3 | IN+ — Non-inverting PWM input (channel 1) |
| Pin 4 | IN- — Inverting PWM input (channel 1) |
| Pin 5 | NC — Not connected (per datasheet) |
| Pin 6 | NC — Not connected (per datasheet) |
| Pin 7 | GND2 — Secondary-side ground (channel 1 output) |
| Pin 8 | OUT1 — Channel 1 gate-drive output |
| Pin 9 | VDD2 — Channel 1 secondary-side supply |
| Pin 10 | GND3 — Secondary-side ground (channel 2 output) |
| Pin 11 | OUT2 — Channel 2 gate-drive output |
| Pin 12 | VDD3 — Channel 2 secondary-side supply |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | IN2+ — Non-inverting PWM input (channel 2) |
| Pin 16 | IN2- — Inverting PWM input (channel 2) |
Typical Applications
2EDF9275FXUMA1 is suitable for 6 applications: Telecom and Server SMPS Power Converters, Solar Inverter and Energy Storage Converters, EV Onboard Charger (OBC) and DC-DC Stages, Industrial Motor Drives and Servo Amplifiers, Resonant LLC and Phase-Shifted Full-Bridge Converters, Totem-Pole Bridgeless PFC Front Ends.
Telecom and Server SMPS Power Converters
The 2EDF9275FXUMA1 is engineered for high-density half-bridge and full-bridge stages in 48 V telecom rectifiers and CRPS server power supplies. Its 4 A source / 8 A sink drive strength directly interfaces with 650 V to 1200 V CoolSiC™ MOSFETs, enabling switching frequencies above 100 kHz and peak efficiencies exceeding 97% in totem-pole PFC and LLC topologies. The 150 V/ns CMTI rating prevents logic errors during the steep SiC dv/dt transitions common in hard-switched stages, and 37 ns propagation delay keeps dead-time losses minimal at high switching frequency.
Recommended
Solar Inverter and Energy Storage Converters
In string and central solar inverters as well as battery energy storage systems, the 2EDF9275FXUMA1 drives the high-side and low-side SiC MOSFETs of the DC-DC boost and full-bridge stages. The functional galvanic isolation eliminates ground loops between the DC bus sensing circuit and the AC grid interface, simplifying PCB layout and improving surge robustness. Tight channel-to-channel matching ensures balanced switching losses, which is critical for inverter thermal management under continuous full-load operation in outdoor installations.
Recommended
EV Onboard Charger (OBC) and DC-DC Stages
Onboard chargers from 3.6 kW to 22 kW use the 2EDF9275FXUMA1 to drive the primary-side full-bridge PFC and isolated DC-DC stages built around 650 V or 1200 V CoolSiC™ MOSFETs. The driver's wide operating temperature range to +125 °C matches the under-hood thermal environment, while its low propagation delay supports the high switching frequencies needed to shrink magnetics and meet automotive power-density targets. Functional isolation satisfies the creepage and clearance requirements between the high-voltage traction bus and the low-voltage control domain.
Recommended
Industrial Motor Drives and Servo Amplifiers
Industrial servo drives and variable-frequency motor controllers use the 2EDF9275FXUMA1 to drive the IGBT or SiC inverter leg switching at 20 kHz to 100 kHz. The dual-channel half-bridge configuration directly interfaces with the standard 3-phase inverter topology, while functional isolation simplifies the gate-drive supply design for floating high-side switches. The robust 150 V/ns CMTI ensures reliable operation in the presence of fast motor-side dv/dt transients, and the industrial -40 °C to +125 °C temperature range supports outdoor cabinet installations.
Recommended
Resonant LLC and Phase-Shifted Full-Bridge Converters
Resonant LLC converters used in datacom and EV power conversion stages benefit from the 2EDF9275FXUMA1's matched channel-to-channel propagation delay, which maintains ZVS (zero-voltage switching) symmetry across the primary-side half-bridge. The 4 A source current is sufficient to drive 1200 V CoolSiC™ MOSFETs at resonant frequencies above 200 kHz, while the 8 A sink capability ensures rapid turn-off to minimize circulating losses. Designers can pair this driver with a digital LLC controller such as the XDPE12284C0000XUMA1 for high-density 3 kW to 30 kW converter designs.
Recommended
Totem-Pole Bridgeless PFC Front Ends
Bridgeless totem-pole PFC stages operating in continuous-conduction mode (CCM) at high switching frequency require a gate driver that can reliably switch 650 V GaN or CoolSiC™ MOSFETs with low dead-time loss. The 2EDF9275FXUMA1's 37 ns propagation delay and tight channel-to-channel matching directly minimize the dead-time window in CCM totem-pole stages, improving efficiency at full load by 0.5% to 1% compared to slower drivers. Functional isolation between the controller and the line-voltage switching node simplifies the EMI filter design.
Recommended
Recommended Products Summary
Engineering reference data for 2EDF9275FXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 2EDF9275F | 1EDN7116GXTMA1 | 2EDN7534RXTMA1 | 1ED020I12B2XUMA1 | IR2110SPBF | 2EDB7259KXUMA1 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-16-11 (150-mil) | PG-DSO-16-11 (150-mil) - same | PG-DSO-16-11 (150-mil) - same | PG-DSO-16-11 (150-mil) - same | PG-DSO-16-11 (150-mil) - same | SOIC-16 (150-mil) - same | PG-DSO-16-11 (150-mil) - same |
| Number of Channels | 2 | 2 | 1 | 2 | 1 | 1 (half-bridge) | 2 |
| CMTI | 150 V/ns | 150 V/ns | 150 V/ns | N/A (non-isolated) | 200 V/ns | N/A (non-isolated) | 150 V/ns |
| Isolation | Functional (Coreless Transformer) | Functional (CLT) | Functional (CLT) | None (non-isolated) | Reinforced (CLT) | None (bootstrap) | Functional (CLT) |
| Optimized For | CoolSiC™ MOSFETs | CoolSiC™ MOSFETs | GaN HEMT / CoolGaN™ | Si MOSFETs / IGBTs | IGBT up to 1200 V | Si MOSFETs / IGBTs | CoolMOS™ / Si MOSFETs |
Key Differentiators
- Asymmetric 4 A source / 8 A sink drive strength optimized for CoolSiC™ MOSFETs (vs 2EDN7534RXTMA1)
- Coreless-transformer functional isolation integrated on-chip (vs IR2110SPBF)
- 150 V/ns CMTI designed for wide-bandgap switching (vs 1ED020I12B2XUMA1)
Design Notes
Place the VDD bypass capacitor as close as possible to the device VDD pin with a short, wide PCB trace to GND. Use a 100 nF X7R ceramic in parallel with a 4.7 µF bulk capacitor; insufficient decoupling on VDD is the most common cause of logic-side latch-up and erratic shutdown of the coreless-transformer isolation barrier. Keep the primary-side GND return loop area to less than ~25 mm² to avoid injecting noise into the input stage.
Estimated: at 4 A peak source and 50% utilization into a 100 nC SiC gate charge, the average gate-drive power per channel is roughly 4 A × 20 V × 50 ns × fsw. At fsw = 100 kHz this is approximately 4 W per channel, so two channels dissipate around 8 W total. Provide at least 1 cm² of copper pour on the output-side GND pin to keep the package within its 31 °C/W thermal limit; otherwise the output-stage thermal pad must be tied to a copper pour large enough to keep junction rise below 40 °C at full load.
Do not exceed the absolute maximum VDD rating during bootstrap capacitor charging. For the high-side channel, the bootstrap capacitor must be sized for the SiC gate charge plus at least 30% margin, otherwise the high-side rail droops during the first switching pulse and the MOSFET enters linear operation. Also verify that the input-side PWM signals have monotonic edges: a non-monotonic IN+ transition can falsely trigger the coreless-transformer comparator and produce a shoot-through event in the half-bridge stage.
Compliance Information
RoHS compliance confirmed by Infineon product page and PartGenie. REACH and halogen-free status not stated in available data; consult the Infineon material declaration for confirmation. The part is not AEC-Q100 qualified; for automotive designs requiring AEC-Q100, evaluate the related 2EDF9275F automotive variant.
