2EDF9275FXUMA1 vs 1EDN7116GXTMA1 Comparación
Comparación detallada lado a lado de 2EDF9275FXUMA1 por Infineon y 1EDN7116GXTMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | 2EDF9275FXUMA1 | 1EDN7116GXTMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | Power MOSFET Drivers | Power MOSFET Drivers |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,74 | $0,84 |
| Driver Configuration | Half-Bridge (High Side + Low Side) | Non-inverting, single low-side |
| Number of Drivers | 2 | 1 |
| Número de salidas | 2 | — |
| Source Current | 4 A | — |
| Sink Current | 8 A | — |
| Propagation Delay (Typ.) | 37 ns | — |
| Channel-to-Channel Matching | [DATA_NEEDED: channel-to-channel matching] | — |
| Common-Mode Transient Immunity (CMTI) | 150 V/ns | — |
| Isolation Type | Functional (Galvanic, Coreless Transformer) | — |
| Input Logic Compatibility | CMOS / TTL (Non-Inverting) | — |
| Supply Voltage Range | [DATA_NEEDED: VCC range] | — |
| Rango de temperatura de funcionamiento | -40 °C to +125 °C | -40 °C to +125 °C |
| Tiempo de subida | [DATA_NEEDED: rise time] | — |
| Tiempo de bajada | 4.5 ns | — |
| Estilo de montaje | SMD/SMT | — |
| Encapsulado | PG-DSO-16-11 (150-mil DSO-16) | PG-VSON-10-4 (3.0 mm × 3.0 mm) |
| Packaging | Cut Tape, MouseReel, Reel | — |
| Optimized For | CoolSiC™ MOSFETs (Wide-Bandgap) | — |
| Estado RoHS | Compliant | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| Función | — | Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs |
| Peak Source Current | — | 2 A (typ) |
| Peak Sink Current | — | 4 A (typ) |
| Input Type | — | Truly Differential Input (TDI) |
| Supply Voltage (VCC) | — | 4.5 V to 5.5 V |
| Switch-Node Blocking Voltage | — | 200 V (max) |
| Propagation Delay (Typ) | — | 9 ns |
| Rise Time (Typ) | — | 3 ns |
| Fall Time (Typ) | — | 3 ns |
| Quiescent Current (Typ) | — | 0.6 mA |
| Miller Clamp | — | Integrated, active |
| UVLO | — | Yes (VCC and gate-rail monitored) |
| Tipo de montaje | — | Surface Mount |
| Nivel MSL | — | MSL3 |
| Target Switch Technology | — | GaN HEMT (CoolGaN) or Si MOSFET |