2EDF9275FXUMA1 vs 1EDN7116GXTMA1 对比

详细并排对比 2EDF9275FXUMA1 出自 Infineon 和 1EDN7116GXTMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDF9275FXUMA1 2EDF9275FXUMA1 - 4A/8A Isolated Gate Driver | Infineon

2EDF9275FXUMA1 - 4A/8A Isolated Gate Driver | Infineon

2EDF9275FXUMA1 ✓ 量产中

规格对比

参数 2EDF9275FXUMA1 1EDN7116GXTMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.74 $0.84
Driver Configuration Half-Bridge (High Side + Low Side) Non-inverting, single low-side
Number of Drivers 2 1
输出数量 2 —
Source Current 4 A —
Sink Current 8 A —
Propagation Delay (Typ.) 37 ns —
Channel-to-Channel Matching [DATA_NEEDED: channel-to-channel matching] —
Common-Mode Transient Immunity (CMTI) 150 V/ns —
Isolation Type Functional (Galvanic, Coreless Transformer) —
Input Logic Compatibility CMOS / TTL (Non-Inverting) —
Supply Voltage Range [DATA_NEEDED: VCC range] —
工作温度范围 -40 °C to +125 °C -40 °C to +125 °C
上升时间 [DATA_NEEDED: rise time] —
下降时间 4.5 ns —
安装方式 SMD/SMT —
封装 PG-DSO-16-11 (150-mil DSO-16) PG-VSON-10-4 (3.0 mm × 3.0 mm)
Packaging Cut Tape, MouseReel, Reel —
Optimized For CoolSiC™ MOSFETs (Wide-Bandgap) —
RoHS 状态 Compliant Compliant
REACH Status [DATA_NEEDED: REACH status] —
功能 — Single-channel low-side gate driver for GaN HEMTs and Si MOSFETs
Peak Source Current — 2 A (typ)
Peak Sink Current — 4 A (typ)
Input Type — Truly Differential Input (TDI)
Supply Voltage (VCC) — 4.5 V to 5.5 V
Switch-Node Blocking Voltage — 200 V (max)
Propagation Delay (Typ) — 9 ns
Rise Time (Typ) — 3 ns
Fall Time (Typ) — 3 ns
Quiescent Current (Typ) — 0.6 mA
Miller Clamp — Integrated, active
UVLO — Yes (VCC and gate-rail monitored)
安装类型 — Surface Mount
MSL 等级 — MSL3
Target Switch Technology — GaN HEMT (CoolGaN) or Si MOSFET

数据手册与资源

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