2EDL8033G4CXTMA1 vs 6EDL04N03PRXUMA1 Comparison

Detailed side-by-side comparison of 2EDL8033G4CXTMA1 by Infineon and 6EDL04N03PRXUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter 2EDL8033G4CXTMA1 6EDL04N03PRXUMA1
Brand Infineon Infineon
Category Power MOSFET Drivers Power MOSFET Drivers
Lifecycle Status Active Active
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side / Low-Side, Non-Inverting —
Number of Outputs 2 (HS + LS) —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Bootstrap Voltage (Max) 120 V —
VCC Supply Voltage 10 V to 20 V —
Logic Input Compatibility 3.3 V / 5 V CMOS / TTL —
Isolation Technology Junction-isolated —
Propagation Delay (Typ) 45 ns —
Channel-to-Channel Matching <10 ns —
Integrated Bootstrap Diode Yes —
Operating Temperature Range -40C to +125C —
Package PG-VDSON-10-2 (10-pin VDSON with exposed pad) PG-TSSOP-25
Mounting Type Surface Mount Surface Mount
Marking Code 2ED8033G4C —
RoHS Status Compliant Compliant
Driver Type — Three-phase gate driver (6-channel half-bridge)
Number of Drivers — 6
Output Configuration — Non-inverting half-bridge
Supply Voltage (VDD) — 10 V to 25 V
Logic Supply Voltage (VSS) — 3.3 V / 5 V
Output Current (Source) — 0.24 A
Output Current (Sink) — 0.375 A
Rise Time — 60 ns (typical at 1 nF load)
Fall Time — 26 ns (typical at 1 nF load)
Bootstrap Diode — Integrated (3 channels)
Over-Current Protection — Yes (adjustable threshold via ITRIP)
Fault Output — Yes (open-drain)
Enable Pin — Yes (EN, active-high)
Propagation Delay — [DATA_NEEDED: propagation delay]
Operating Temperature — -40 C to +125 C
MSL Level — 3
Blocking Voltage — 200 V / 600 V family

Datasheets & Resources

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