2EDL8033G4CXTMA1 vs 6EDL04N03PRXUMA1 Perbandingan

Perbandingan bersamaan detil 2EDL8033G4CXTMA1 dari Infineon dan 6EDL04N03PRXUMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum 2EDL8033G4CXTMA1 6EDL04N03PRXUMA1
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side / Low-Side, Non-Inverting —
Jumlah Output 2 (HS + LS) —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Bootstrap Voltage (Max) 120 V —
VCC Supply Voltage 10 V to 20 V —
Logic Input Compatibility 3.3 V / 5 V CMOS / TTL —
Isolation Technology Junction-isolated —
Propagation Delay (Typ) 45 ns —
Channel-to-Channel Matching <10 ns —
Integrated Bootstrap Diode Yes —
Rentang Suhu Kerja -40C to +125C —
Paket PG-VDSON-10-2 (10-pin VDSON with exposed pad) PG-TSSOP-25
Tipe Mounting Surface Mount Surface Mount
Marking Code 2ED8033G4C —
Status RoHS Compliant Compliant
Driver Type — Three-phase gate driver (6-channel half-bridge)
Number of Drivers — 6
Konfigurasi Output — Non-inverting half-bridge
Supply Voltage (VDD) — 10 V to 25 V
Logic Supply Voltage (VSS) — 3.3 V / 5 V
Output Current (Source) — 0.24 A
Output Current (Sink) — 0.375 A
Waktu naik — 60 ns (typical at 1 nF load)
Waktu Menurun — 26 ns (typical at 1 nF load)
Bootstrap Diode — Integrated (3 channels)
Over-Current Protection — Yes (adjustable threshold via ITRIP)
Fault Output — Yes (open-drain)
Tombol Aktifkan — Yes (EN, active-high)
Propagation Delay — [DATA_NEEDED: propagation delay]
Suhu Kerja — -40 C to +125 C
Level MSL — 3
Blocking Voltage — 200 V / 600 V family

Spek dan Sumber

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